HSMC H2N5366 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6275-A
Issued Date : 1999.02.01
Revised Date : 2000.09.15
Page No. : 1/3
H2N5366
PNP EPITAXIAL PLANAR TRANSIST OR
Description
The H2N5366 is designed for general purpose applications requiring
high breakdown voltages.
Features
This device was designed for use as general purpose amplifier and switches.
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 400 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e....................................................................................... -40 V
VCEO Collector to Emitter Voltage .................................................................................... -40 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current...................................................................................................... -500 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -40 - - V IC=-100uA, IE=0
BVCEO -40 - - V IC=-1mA, IB=0
BVEBO -4 - - V IE=-10uA, IC=0
ICBO - - -100 nA VCB=-45V, IE=0
IEBO - - -100 nA VEB=-3V. IC=0
*VCE(sat)1 - - -250 mV IC=-50mA, IB=-5mA
*VCE(sat)2 - - -1 V IC=-300mA, IB=-30mA
*VBE(sat)1 - - -1.1 V IC=-50mA, IB=-5mA
*VBE(sat)2 - - -2 V IC=-300mA, IB=-30mA
*hFE1 80 - - VCE=-1V, IC=-2mA
*hFE2 100 - - VCE=-1V, IC=-50mA
*hFE3 40 - - VCE=-5V, IC=-300mA
fT - - - MHz VCE=-10V, IC=-10mA, f=100MHz
Cob - - 10 PF VCB=-10V, f=1MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6275-A
Issued Date : 1999.02.01
Revised Date : 2000.09.15
Page No. : 2/3
1000
100
hFE
10
1
Current Gain & Collector Current
VCE=5V
VCE=1V
1 10 100 1000
Collector Current (mA)
Saturation Volt age & Coll ector Current
10000
10000
1000
100
Saturation Voltage (mV)
100
Saturation Volt age & Coll ector Current
CE(sat)
V
10
1 10 100 1000
Collector Current (mA)
@ IC=10I
B
Capacitance & Reverse-Biased Volt age
1000
BE(sat)
V
Saturation Voltage (mV)
100
1 10 100 1000
Collector Current (mA)
@ IC=10I
B
Safe Operating Area
10
PT=1ms
1
0.1
Collector Current (mA)
0.01
PT=100ms
PT=1s
1 10 100
Forwar d Voltage (V)
10
Capacitance (Pf)
Cob
1
1 10 100
Reverse Biased Volt a ge ( V)
PD-Ta
450
400
350
300
250
200
150
Power Dissipation-PD(mW)
100
50
0
0 50 100 150 200
Ambient Temper atur e- Ta(oC)
HSMC Product Specification
Loading...