HSMC H2N5088 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6227-B
Issued Date : 1993.04.12
Revised Date : 2000.09.15
Page No. : 1/3

H2N5088

NPN EPITAXIAL PLANAR TRANSISTOR

Description

This device was designed for low noise, high gain , general purpose
amplifier applications for 1uA to 25mA collector current.

Absolute Maximum Ratings

Maximum Temperatures

•

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature................................................................................... +150 °C Maximum

Maximum Power Dissipation

•

Total Power Dissipation (Ta=25°C)............................................................................... 350 mW

Maximum Voltages and Currents (Ta=25°C)

•

VCBO Collector to Base Voltag e........................................................................................ 35 V

VCEO Collector to Emitter Voltage ..................................................................................... 30 V

VEBO Emitter to Base Voltage .......................................................................................... 4.5 V

IC Collector Current......................................................................................................... 50 mA

Characteristics

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO 35 - - V IC=100uA, IE=0
BVCEO 30 - - V IC=1mA, IB=0
BVEBO 4.5 - - V IE=10uA, IC=0

ICBO - - 50 nA VCB=20V, IE=0
IEBO - - 50 nA VEB=3V, IC=0

*VCE(sat) - - 0.5 V IC=10mA, IB=1mA

VBE(on) - - 0.8 V IC=10mA, IB=5V

*hFE1 300 - 900 VCE=5V, IC=0.1mA
*hFE2 350 - - VCE=5V, IC=1mA
*hFE3 300 - - VCE=5V, IC=10mA

fT 50 - - MHz VCE=5V, IC=0.5mA, f=100MHz

Cob - - 4.0 pF VCB=5V, f=1MHz, IE=0

(Ta=25°C)

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6227-B
Issued Date : 1993.04.12
Revised Date : 2000.09.15
Page No. : 2/3

1000

hFE

100

0.1 1 10 100

Current Gain & Collector Current

hFE @ VCE=5V

Collector Current (mA)

On Voltage & Collector Current

1.0

BE(on)

V

@ VCE=5V

1.00

0.10

Saturation Voltage (V)

0.01

10

Sturation Voltage & Collector Current

BE(sat)

V

VCE(sat) @ IC=10I

0.1 1 10 100

Collector Current (mA)

@ IC=10I

B

B

Capacitance & Reverse-Biased Voltage

On Voltage (V)

0.1

0.01 0.1 1 10 100

1000

100

Cutoff Frequency (MHz)

Cut off Fr equency & Col lector Current

Collector Current (mA)

VCE=5V

1

Capac itance (pF)

0.1

0.1 1 10 100

10000

1000

(mA)

C

100

Collector Current-I

10

Cob

Reverse- Biased Vol t a ge (V)

Safe Operating Ar ea

PT=1ms
PT=100ms

PT=1s

10

1 10 100 1000

Collector Current (mA)

1

1 10 100

Forwar d Voltage- VCE (V)

HSMC Product Specification