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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6240-B
Issued Date : 1992.11.25
Revised Date : 2000.09.01
Page No. : 1/3
H2N4124
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4124 is designed for general purpose switching and
amplifier applicati ons.
Features
Complementary to H2N4126
•
Low Collector to Emitter Saturation Voltage
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C) .............................................................................. 350 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage........................................................................................ 30 V
VCEO Collector to Emitter Voltage..................................................................................... 25 V
VEBO Emitter to Base Voltage............................................................................................. 5 V
IC Collector Current....................................................................................................... 200 mA
Characteristics
Symbol Min. Max. Unit Test Co nditions
BVCBO 30 - V IC= 10uA, IE= 0
BVCEO 25 - V IC=1mA. IB=0
BVEBO 5.0 - V IE=10uA, IC=0
ICBO - 50 nA VCB=20V, IE=0
IEBO - 50 nA VEB=3V, IC=0
*VCE(sat) - 0.3 V IC=50mA, IB=5mA
*VBE(sat) - 950 mV IC=50mA, IB=5mA
*hFE1 120 360 VCE=1V, IC=2mA
*hFE2 60 - VCE=1V, IC=50mA
fT 300 - MHz VCE=20V, IC=10mA,, f=100MHz
Cob - 4 pF VCB=5V, IE=0, f=100MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6240-B
Issued Date : 1992.11.25
Revised Date : 2000.09.01
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000
1000
Current Gain & Collector Current
hFE @ VCE=1V
Collector Current (mA)
Cut off Fr equency & Collector Current
VCE=20V
10000
1000
100
Saturation Voltage (mV)
10
10
Satur ation Vol tage & Collector Current
BE(sat)
V
0.1 1 10 100 1000
Collector Current (mA)
@ IC=10I
CE(sat)
V
B
@ IC=10I
Capacitance & R everse- Biased Voltage
B
100
Cutoff Frequency (MHz)
10
1 10 100
10000
PT=1ms
PT=100ms
PT=1s
(mA)
C
Collector Current-I
1000
100
10
Collector Current (mA)
Safe Operating Area
Capac itan c e (pF)
Cob
1
0.1 1 10 100
Reverse-Biased Vol t a ge ( V)
1
1 10 100
Forwar d Voltage- VCE (V)
HSMC Product Specification