HSMC 2SB857, HSB857 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 1/3
HSB857 / 2SB857
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current.............................................................................................................. -4 A
IC Collector Current (IC Peak).............................................................................................. -8 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -70 - - V IC=-10uA, IE=0
BVCEO -50 - - V IC=-50mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -1 uA VCB=-50V, IC=0
*VCE(sat) - - -1 V IC=-2A, IB=-0.2A
*VBE(on) - - -1 V IC=-1A, VCE=-4V
*hFE1 35 - - IC=-0.1A, VCE=-4V
*hFE2 60 - 320 IC=-1A, VCE=-4V
fT - 15 - MHz VCE=-4V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank B C D
hFE 60-120 100-200 160-320
HSB857 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 2/3
1000
Current Gain & Collector Current
hFE @ VCE=4V
100
hFE
10
1
1 10 100 1000 10000
Collect or Cur rent (mA)
On Vo ltage & C ollector Current
10000
10000
1000
BE(sat)
V
100
Saturation Voltage (mV)
10
1 10 100 1000 10000
Collect or Cur rent (mA)
@ IC=10I
V
B
BE(sat)
@ IC=10I
Switching Ti me & Collector Current
Saturatio n Voltage & Collector Current
10.00
VCC=30V, IC=10IB1= -10I
1.00
B2
Tstg
B
1000
On Voltage (mV)
100
1 10 100 1000 10000
Collect or Cur rent (mA)
BE(on)
V
@ VCE=4V
Capacitance & Reverse- B iased Voltage
1000
100
Capac itanc e (pF)
Cob
0.10
Switchin g Times (us)
0.01
0.1 1.0 10.0
Collect or Cur rent (A)
Tf
Ton
Safe Op erating Ar ea
100000
10000
(mA)
C
1000
100
Collect or Cur rent-I
PT=1ms
PT=100ms
PT=1s
10
10
0.1 1 10 100
Rever se- Biased Voltage (V)
1
1 10 100
Forward Voltage-VCE (V)
HSB857 HSMC Product Specification
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