HP MSA-0885 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0885
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
22.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
purpose 50 Ω gain block above
0.5␣ GHz and can be used as a high
gain transistor below this frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial and industrial applications.
3.3␣ dB Typical at 1.0␣ GHz
• Low Cost Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
Description
The MSA-0885 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
designed for use as a general
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 7.8 V
d
C
block
V
CC
85 Plastic Package
,
MAX
>
10
V
5965-9545E
6-422
MSA-0885 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 65 mA
Power Dissipation
[2,3]
500 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65°C to 150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
> 85° C.
C
2. T
3. Derate at 7.7 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 130°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 36 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 32.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 21.0 22.5
VSWR
Input VSWR f = 0.1 to 3.0 GHz 1.9:1
Output VSWR f = 0.1 to 3.0 GHz 1.6:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 3.3
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5
Third Order Intercept Point f = 1.0 GHz dBm 27.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 6.2 7.8 9.4
dV/dT Device Voltage Temperature Coefficient mV/°C –17.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
6-423
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