HP MSA-0870 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0870
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
23.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
purpose 50 Ω gain block above
0.5␣ GHz and can be used as a high
gain transistor below this frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in industrial
and military applications.
3.0␣ dB Typical at 1.0␣ GHz
• Hermetic Gold-ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
Description
The MSA-0870 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic, high
reliability package. This MMIC is
designed for use as a general
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
70 mil Package
,
MAX
V
>
10
V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 7.8 V
d
C
block
5965-9544E
6-418
MSA-0870 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 80 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65°C to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 6.7 mW/° C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
750 mW
> 88° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 150°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 36 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 32.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 22.0 23.5 25.0
f = 4.0 GHz 11.0 12.0
VSWR
Input VSWR f = 1.0 to 3.0 GHz 2.0:1
Output VSWR f = 1.0 to 3.0 GHz 1.9:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 3.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5
Third Order Intercept Point f = 1.0 GHz dBm 27.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 7.0 7.8 8.4
dV/dT Device Voltage Temperature Coefficient mV/°C –17.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
6-419
Loading...