HP MSA-0770 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0770
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
4.0 V Typical V
• 3 dB Bandwidth:
DC to 2.5 GHz
d
high reliability package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
• 13.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Hermetic, Gold-ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
Description
The MSA-0770 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
70 mil Package
,
MAX
V
> 5 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 4.0 V
d
C
block
5965-9592E
6-398
MSA-0770 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 60 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 7.7 mW/° C for T
4. Ths small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
275 mW
> 164° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 130°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 22 mA, Z
G
P
∆G
P
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 12.5 13.5 14.5
Gain Flatness f = 0.1 to 1.5 GHz dB ±0.6 ± 1.0
3 dB Bandwidth GHz 2.5
Input VSWR f = 0.1 to 2.5 GHz 2.0:1
Output VSWR f = 0.1 to 2.5 GHz 1.6:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
NF 50 Ω Noise Figure f = 1.0 GHz dB 4.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5
Third Order Intercept Point f = 1.0 GHz dBm 19.0
Group Delay f = 1.0 GHz psec 130
Device Voltage V 3.6 4.0 4.4
dV/dT Device Voltage Temperature Coefficient mV/°C –7.0
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
6-399
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