HP MSA-0735, MSA-0736-BLK, MSA-0736-TR1 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0735, -0736
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
4.0 V Typical V
• 3 dB Bandwidth:
DC to 2.4 GHz
d
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
• 13.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
Description
The MSA-0735 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
(MMIC) housed in a cost effective,
Typical Biasing Configuration
R
bias
35 micro-X Package
,
MAX
V
> 5 V
CC
Note:
1. Short leaded 36 package available upon
request.
[1]
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 4.0 V
d
C
block
5965-9591E
6-394
MSA-0735, -0736 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 60 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 6.5 mW/° C for T
4. Storage above +150°C may tarnish the leads of this package making it
5. Ths small spot size of this technique results in a higher, though more
= 25°C.
CASE
difficult to solder into a circuit.
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
275 mW
> 157° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 155°C/W
[2,5]
:
Electrical Specifications
[1]
, T
= 25° C
A
Symbol Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω Units Min. Typ. Max.
G
P
∆G
P
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 12.5 13.5 14.5
Gain Flatness f = 0.1 to 1.3 GHz dB ±0.6 ± 1.0
3 dB Bandwidth GHz 2.4
Input VSWR f = 0.1 to 2.5 GHz 2.0:1
Output VSWR f = 0.1 to 2.5 GHz 1.8:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 4.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5
Third Order Intercept Point f = 1.0 GHz dBm 19.0
Group Delay f = 1.0 GHz psec 140
Device Voltage V 3.6 4.0 4.4
dV/dT Device Voltage Temperature Coefficient mV/°C –7.0
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0735 10 Strip
MSA-0736-BLK 100 Antistatic Bag
MSA-0736-TR1 1000 7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-395
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