HP MSA-0700-GP4 Datasheet

Cascadable Silicon Bipolar
MMIC␣ Amplifiers

Technical Data

MSA-0700

Features

• Cascadable 50 Ω Gain Block

• Low Operating Voltage:

4.0 V Typical V

• 3 dB Bandwidth:

DC to 2.5 GHz

• 13.0␣ dB Typical Gain at

1.0␣ GHz

d

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli­zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias

Description

flexibility.

The MSA-0700 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general

purpose 50 Ω gain block. Typical

applications include narrow and

The recommended assembly
procedure is gold-eutectic die

attach at 400°C and either wedge

or ball bonding using 0.7 mil gold
wire.
section, “Chip Use”.

broad band IF and RF amplifiers
in commercial, industrial and
military applications.

Typical Biasing Configuration

R

bias

[1]

See APPLICATIONS

V

> 5 V

CC

MAX

Chip Outline

[1]

,

Note:

1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section “Silicon MMIC Chip Use” for
additional information.

RFC (Optional)

C

block

IN OUT

MSA

V

= 4.0 V

d

C

block

5965-9589E

6-386

MSA-0700 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 60 mA
Power Dissipation
RF Input Power +13 dBm

Junction Temperature 200°C
Storage Temperature –65 to 200° C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

Mounting␣ Surface

3. Derate at 20 mW/° C for T

4. The small spot size of this technique results in a higher, though more

accurate determination of θ

MENTS section “Thermal Resistance” for more information.

[2,3]

= 25°C.

275 mW

Mounting␣ Surface

jc

␣ > 186 ° C.

than do alternate methods. See MEASURE-

[1]

Thermal Resistance

θjc = 50°C/W

[2,4]

:

Electrical Specifications

Symbol Parameters and Test Conditions

G

P

∆G

f

3 dB

VSWR

Power Gain (|S21|2) f = 0.1 GHz dB 13.5

Gain Flatness f = 0.1 to 1.5 GHz dB ±0.6

P

3 dB Bandwidth GHz 2.5

Input VSWR f = 0.1 to 2.5 GHz 2.0:1

Output VSWR f = 0.1 to 2.5 GHz 1.6:1

[1]

, T

A

= 25° C

[2]

: Id = 22 mA, Z

= 50 Ω Units Min. Typ. Max.

O

NF 50 Ω Noise Figure f = 1.0 GHz dB 4.5

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5

Third Order Intercept Point f = 1.0 GHz dBm 19.0

Group Delay f = 1.0 GHz psec 130

Device Voltage V 3.6 4.0 4.4

dV/dT Device Voltage Temperature Coefficient mV/°C –7.0

Notes:

1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.

2.

Part Number Ordering Information

Part Number Devices Per Tray

MSA-0700-GP4 up to 100

6-387