Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0685
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical V
• 3 dB Bandwidth:
DC to 0.8 GHz
d
plastic package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
• High Gain:
18.5␣ dB Typical at 0.5 GHz
• Low Noise Figure:
3.0 dB Typical at 0.5 GHz
• Low Cost Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
Description
The MSA-0685 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
85 Plastic Package
,
MAX
V
> 5 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 3.5 V
d
C
block
5965-9587E
6-378
MSA-0685 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 50 mA
Power Dissipation
[2,3]
200 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
> 128° C.
C
2. T
3. Derate at 9.1 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 110°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 16 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 20.0
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 0.5 GHz 17.0 18.5
∆G
f
3 dB
VSWR
Gain Flatness f = 0.1 to 0.5 GHz dB ±0.7
P
3 dB Bandwidth GHz 0.8
Input VSWR f = 0.1 to 1.5 GHz 1.5:1
Output VSWR f = 0.1 to 1.5 GHz 1.4:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 3.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 2.0
Third Order Intercept Point f = 0.5 GHz dBm 14.5
Group Delay f = 0.5 GHz psec 200
Device Voltage V 2.8 3.5 4.2
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 12 to 25 mA. Typical performance as a function of current
is on the following page.
6-379