DH AS AlGaAs Red
High Efficiency Red
Yellow
High Performance Green
• IC Compatible/Low Current
Requirements
Description
The HLMP–R100, -030X, -040X,
-050X are solid state lamps
encapsulated in a radial lead
rectangular epoxy package. They
utilize a tinted, diffused epoxy to
provide high on-off contrast and a
flat high intensity emitting
surface. Borderless package
design allows creation of
uninterrupted light emitting areas.
The HLMP-R100 uses a double
heterojunction (DH) absorbing
substrate (AS) aluminum gallium
arsenide (AlGaAs) red LED chip
in a light red epoxy package. This
combination produces
outstanding light output over a
wide range of drive currents.
The HLMP-0300 and -0301 have a
high efficiency red GaAsP on GaP
LED chip in a light red epoxy
package.
The HLMP-0400 and -0401
provide a yellow GaAsP on GaP
LED chip in a yellow epoxy
package.
Package Dimensions
The HLMP-0503 and -0504
provide a green GaP LED chip in
a green epoxy package.
Peak Forward Current300906090mA
Average Forward Current
DC Current
Power Dissipation8713585135mW
Reverse Voltage (IR = 100 µA)5555V
Transient Forward Current
Operating Temperature Range-20 to-20 to
Storage Temperature Range-55 to-55 to
Lead Soldering Temperature260°C for 5 seconds
(1.6 mm [0.063 in.] from body)
Notes:
1. See Figure 5 to establish pulsed operating conditions.
2. For AlGaAs Red, Red, and Green Series derate linearly from 50°C at 0.5 mA/°C. For Yellow Series derate linearly from 50°C at
0.2 mA/°C.
3. The transient peak current is the maximum non-recurring peak current that can be applied to the device without damaging the LED
die and wirebond. It is not recommended that the device be operated at peak current beyond the peak forward current listed in the
Absolute Maximum Ratings.
[2]
[1]
[3]
(10 µs Pulse)500500500500mA
= 25°C
A
HLMP-HLMP-HLMP-HLMP-
20252025mA
30302030mA
+100-55 to-55 to+100°C
+100+100
+100+100
1-150
Electrical/Optical Characteristics at T
= 25°C
A
HLMPHLMPHLMP
HLMP-R100-0300/-0301-0400/-0401-0503/-0504
Test
Sym. DescriptionMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Conditions
2θ
Included Angle
1/2
Between Half
Luminous100100100100Deg.Note 1. Fig. 6
Intensity
Points
λ
Peak645635583565nmMeasurement
P
Wavelengthat Peak
λ
Dominant637626585569nmNote 2
d
Wavelength
∆λ
Spectral Line20403628nm
1/2
Halfwidth
τ
Speed of309090500ns
s
Response
CCapacitance30161818pFVF = 0;
f = 1 MHz
Rθ
Thermal260260260260°C/WJunction to
J-PIN
ResistanceCathode Lead
VFForward1.82.21.92.62.12.62.23.0VIF = 20 mA
VoltageFigure 2.
VRReverse5.05.05.05.0VIR = 100 µA
Breakdown
Voltage
η
Luminous80145500595lm/WNote 3
v
Efficacy
Notes:
1. θ
is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
1/2
2. The dominant wavelength, λd, is derived from the CIE chromaticity diagram and represents the single wavelength which defines the
color of the device.
3. Radiant intensity, Ie, in watts/steradian, may be found from the equation Ie = Iv/ηv, where Iv is the luminous intensity in candelas and η
is the luminous efficacy in lumens/watt.
Figure 1. Relative Intensity vs. Wavelength.
v
1-151
Figure 2. Forward Current vs.
Forward Voltage. VF (300 mA) for
AlGaAs Red = 2.6 Volts Typical.
Figure 3. Relative Luminous Intensity
vs. Forward Current.
Figure 4. Relative Efficiency
(Luminous Intensity per Unit Current)
vs. Peak Current. ηv (300 mA) for
AlGaAs Red = 0.7.
Figure 5. Maximum Tolerable Peak Current vs. Peak Duration (I
Determined from Temperature Derated IDC MAX).
Figure 6. Relative Luminous Intensity vs. Angular Displacement.
1-152
PEAK
MAX
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