General Purpose, Low Noise
NPN␣ Silicon Bipolar Transistor
Technical Data
AT-41511
AT-41533
Features
• General Purpose NPN
Bipolar Transistor
• 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB G
AT-41533: 1 dB NF, 14.5 dB G
• Characterized for 3, 5, and
8 Volt Use
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-and-Reel Packaging
Option Available
[1]
Outline Drawing
EMITTER COLLECTOR
415
BASEEMITTER
SOT 143 (AT-41511)
COLLECTOR
415
Description
Hewlett-Packard’s AT-41511 and
AT-41533 are general purpose
NPN bipolar transistors that offer
excellent high frequency
A
performance at an economical
A
price. The AT-41533 uses the
3␣ lead SOT-23, while the AT-415 11
places the same die in the lower
parasitic 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate
power.
Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good
performers at 2.7 V. Applications
include use in wireless systems as
an LNA, gain stage, buffer,
oscillator, or active mixer.
An optimum noise match near
50␣ ohms at 900 MHz makes these
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.
The AT-415 series bipolar
transistors are fabricated using
Hewlett-Packard’s 10 GHz fT SelfAligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by
the use of ion-implantation, selfalignment techniques, and gold
metalization in the fabrication of
these devices.
BASEEMITTER
SOT 23 (AT-41533)
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices.”
5965-8929E
4-134
AT-41511, AT-41533 Absolute Maximum Ratings
Absolute
Symbol ParameterUnitsMaximum
V
V
V
T
EBO
CBO
CEO
I
C
P
T
T
STG
j
Emitter-Base VoltageV1.5
Collector-Base VoltageV20
Collector-Emitter VoltageV12
Collector CurrentmA50
Power Dissipation
[2,3]
m W225
Junction Temperature° C150
Storage Temperature°C-65 to 150
[1]
Thermal Resistance:
θ
=550°C/W
jc
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. T
Mounting Surface
3. Derate at 1.82 mW/°C for TC > 26°C.
= 25°C.
[2]
Electrical Specifications, T
= 25° C
A
AT-41511 AT-41533
SymbolParameters and Test ConditionsUnits MinTypMaxMinTypMax
h
FE
Forward Current Transfer RatioVCE = 5 V-3015027030150270
IC = 5 mA
I
CBO
I
EBO
Characterization Information, T
Collector Cutoff CurrentV
Emitter Cutoff CurrentV
= 25° C
A
= 3 VµA0.20.2
CB
= 1 VµA1.01.0
EB
AT-41511 AT-41533
SymbolParameters and Test ConditionsUnitsMin Typ Min Typ
NFNoise Figuref = 0.9 GHzdB1.01.0
VCE = 5 V, IC = 5 mAf = 2.4 GHz1.71.6
G
Associated Gainf = 0.9 GHzdB15.514.5
A
VCE = 5 V, IC = 5 mAf = 2.4 GHz 119
P
1dB
Power at 1 dB Gain Compression (opt tuning)f = 0.9 GHzdBm14.514.5
VCE = 5 V, IC = 25 mA
G
1dB
Gain at 1 dB Gain Compression (opt tuning)f = 0.9 GHzdB17.514.5
VCE = 5 V, IC = 25 mA
IP
Output Third Order Intercept Point,f = 0.9 GHzdBm2525
3
VCE = 5 V, IC =25 mA (opt tuning)
2
|S
|
21E
Gain in 50 Ω system; V
= 5 V, IC = 5 mAf = 0.9 GHzdB13.5 15.5 10.812.8
CE
f = 2.4 GHz7.95.2
Ordering Information
Part NumberIncrementComments
AT-41511-BLK100Bulk
AT-41511-TR130007 " Reel
AT-41533-BLK100Bulk
AT-41533-TR130007 " Reel
4-135
AT-41511, AT-41533 Typical Performance
NOISE FIGURE (dB)
0.1
3.0
0
FREQUENCY (GHz)
0.62.12.6
2.5
1.5
0.5
1.6
2.0
1.0
1.1
25 mA
10 mA
5 mA
G
a
(dB)
0.1
20
0
FREQUENCY (GHz)
0.62.12.6
15
10
5
1.6
1.1
PKG 11
PKG 33
10, 25 mA
5 mA
10, 25 mA
5 mA
3.0
2.5
2.0
1.5
1.0
NOISE FIGURE (dB)
0.5
0
0.62.12.6
0.1
FREQUENCY (GHz)
1.1
25 mA
10 mA
2, 5 mA
1.6
Figure 1. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 2.7 V.
20
10, 25 mA
5
5 mA
2 mA
10, 25 mA
5 mA
2 mA
PKG 11
15
10
PKG 11 (dB)
a
G
25
20
15
10
3.0
2.5
2.0
1.5
1.0
NOISE FIGURE (dB)
0.5
0
0.1
1.1
0.62.12.6
FREQUENCY (GHz)
1.6
Figure 2. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 5 V.
20
PKG 11
15
PKG 33
10
(dB)
a
G
PKG 33 (dB)
a
G
5
25 mA
2 mA
10 mA
5 mA
10, 25 mA
5 mA
10, 25 mA
5 mA
Figure 3. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 8 V.
0
0.62.12.6
0.1
FREQUENCY (GHz)
PKG 33
1.61.1
Figure 4. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 2.7 V.
20
15
10
(dBm)
1 dB
P
5
0
1.1
1.6
0.62.12.6
0.1
FREQUENCY (GHz)
25 mA
10 mA
5 mA
Figure 7. AT-41511 and AT-41533
P
vs. Frequency and Bias at
1dB
VCE␣ =␣ 2.7␣ V, with Optimal Tuning.
5
0
0.62.12.6
0.1
FREQUENCY (GHz)
1.1
1.6
Figure 5. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 5 V.
20
15
10
(dBm)
1 dB
P
5
0
0.1
0.62.12.6
FREQUENCY (GHz)
1.1
1.6
Figure 8. AT-41511 and AT-41533
P
vs. Frequency and Bias at
1dB
VCE␣ =␣ 5␣ V, with Optimal Tuning.
25 mA
10 mA
5 mA
Figure 6. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 8 V.
20
25 mA
15
10 mA
10
(dBm)
1 dB
P
5
0
0.62.12.6
0.1
FREQUENCY (GHz)
1.1
1.6
Figure 9. AT-41511 and AT-41533
P
vs. Frequency and Bias at
1dB
VCE␣ =␣ 8␣ V, with Optimal Tuning.
5 mA
4-136
AT-41511 Typical Scattering Parameters, Common Emitter, Z
GAIN (dB)
0
30
0
FREQUENCY (GHz)
145
25
15
5
3
20
10
2
MSG
MAG
MSG
S21
GAIN (dB)
0
30
0
FREQUENCY (GHz)
145
25
15
5
3
20
10
2
MSG
MAG
MSG
S21
Freq.S
11
S
21
= 50 Ω, V
o
S
12
= 2.7 V, IC = 5 mA
CE
S
22
GHzMagAngdBMagAngdBMagAngMagAng
0.10.84-2723.4414.854161-34.890.018760.95-11
0.50.59-10219.018.924115-24.880.057480.65-34
0.90.49-14115.095.68493-22.970.071430.51-39
1.00.48-14914.305.18989-22.730.073430.49-39
1.50.46-17611.153.6172-21.210.087440.44-43
1.80.461709.693.05164-20.260.097450.43-45
2.00.461628.862.77459-19.740.103450.42-47
2.40.471487.372.33750-18.640.117460.42-51
3.00.51305.581.90136-17.140.139450.41-59
4.00.561063.251.45417-14.890.18420.4-73
5.00.61871.361.170-12.960.225370.4-91
AT-41511 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.10.80.4560.25
0.91.00.39630.19
1.81.40.321370.12
2.41.70.401770.09
= 50 Ω, V
o
min
= 2.7 V, I
CE
Γ
opt
= 5 mA
C
R
n
AT-41533 Typical Scattering Parameters, Common Emitter, Z
Freq.S
GHzMagAngdBMagAngdBMagAngMagAng
0.10.78-3023.4314.834155-33.980.020750.94-12
0.50.35-9916.917.004103-24.580.059600.62-28
0.90.23-14412.504.21984-21.210.087620.55-30
1.00.21-15411.653.82680-20.540.094630.54-31
1.50.201628.502.66164-17.460.134640.52-36
1.80.221447.092.26156-15.970.159630.51-40
2.00.231346.302.06551-15.090.176630.51-42
2.40.261184.971.77342-13.390.214610.50-48
3.00.301013.451.48830-11.210.275560.48-58
4.00.37801.661.21113-8.200.389460.45-80
5.00.44620.351.041-1-5.900.507330.42-104
11
AT-41533 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.10.70.4580.20
0.91.00.25940.13
1.81.40.38-1590.08
2.41.60.54-1220.16
= 50 Ω, V
o
min
= 2.7 V, I
CE
Γ
opt
S
21
= 5 mA
C
4-137
Figure 10. AT-41511 Gains vs.
Frequency at VCE = 2.7 V, IC = 5 mA.
= 50 Ω, V
o
S
12
R
n
Figure 11. AT-41533 Gains vs.
Frequency at VCE = 2.7 V, IC = 5 mA.
= 2.7 V, IC = 5 mA
CE
S
22
AT-41511 Typical Scattering Parameters, Common Emitter, Z
GAIN (dB)
0
30
0
FREQUENCY (GHz)
145
25
15
5
3
20
10
2
MSG
MAG
MSG
S21
GAIN (dB)
0
30
0
FREQUENCY (GHz)
145
25
15
5
3
20
10
2
MSG
MAG
MSG
S21
Freq.S
11
S
21
= 50 Ω, V
o
S
12
= 2.7 V, IC = 25 mA
CE
S
22
GHzMagAngdBMagAngdBMagAngMagAng
0.10.49-9129.2629.048136-37.720.013620.73-22
0.50.53-16818.558.45992-30.460.030610.45-23
0.90.5317213.624.79879-26.560.047660.42-26
1.00.5316912.734.33076-25.680.052670.42-27
1.50.541539.342.93263-22.500.075670.42-34
1.80.551457.862.47357-21.010.089660.42-38
2.00.561406.972.23252-20.090.099660.42-41
2.40.571295.471.87744-18.490.119640.42-48
3.00.601163.671.52532-16.540.149590.41-58
4.00.64951.301.16214-13.980.200510.40-75
5.00.6779-0.580.935-1-11.900.254430.39-96
AT-41511 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.11.60.13180.16
0.91.90.24-1620.13
1.82.30.40-1370.23
2.42.70.50-1220.35
= 50 Ω, V
o
min
= 2.7 V, I
CE
Γ
opt
= 25 mA
C
R
n
AT-41533 Typical Scattering Parameters, Common Emitter, Z
Freq.S
GHzMagAngdBMagAngdBMagAngMagAng
0.10.34-7529.3729.404127-37.080.014720.71-21
0.50.19-16817.637.61488-25.680.052760.47-20
0.90.2016112.734.32974-20.820.091740.46-24
1.00.2015411.843.90971-19.910.101740.45-26
1.50.241328.562.67959-16.420.151700.45-33
1.80.251217.122.27152-14.850.181670.44-38
2.00.271156.322.07147-13.940.201650.44-41
2.40.291054.991.77739-12.320.242610.43-48
3.00.33933.461.48927-10.310.305540.41-59
4.00.39761.691.21511-7.660.414420.37-81
5.00.45600.401.047-3-5.730.517290.33-106
11
AT-41533 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.11.30.10240.12
0.91.60.25-1580.11
1.81.90.48-1220.19
2.42.10.59-1010.37
= 50 Ω, V
o
min
= 2.7 V, I
CE
S
Γ
opt
21
= 25 mA
C
4-138
= 50 Ω, V
o
R
n
Figure 12. AT-41511 Gains vs.
Frequency at VCE = 2.7 V, IC = 25␣ mA.
= 2.7 V, IC = 25 mA
CE
S
12
Figure 13. AT-41533 Gains vs.
Frequency at VCE = 2.7 V, IC = 25 mA.
S
22
AT-41511 Typical Scattering Parameters, Common Emitter, Z
GAIN (dB)
0
30
0
FREQUENCY (GHz)
145
25
15
5
3
20
10
2
MSG
MAG
MSG
S21
Freq.S
11
S
21
= 50 Ω, V
o
S
12
= 5 V, IC = 5 mA
CE
S
22
GHzMagAngdBMagAngdBMagAngMagAng
0.10.88-2523.4714.918162-34.890.018770.95-11
0.50.61-9619.319.234116-25.040.056490.66-33
0.90.50-13515.495.94894-23.220.069440.52-38
1.00.48-14214.705.43390-22.850.072430.50-39
1.50.45-17011.593.79674-21.310.086440.45-42
1.80.4517610.133.21066-20.450.095450.44-44
2.00.451689.312.92161-19.910.101460.43-46
2.40.451547.852.46952-18.860.114460.42-51
3.00.481366.062.00939-17.330.136460.42-58
4.00.531113.771.54419-15.090.176430.40-72
5.00.58921.911.2462-13.070.222390.40-90
AT-41511 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.10.80.4650.30
0.91.00.39600.22
1.81.40.341300.13
2.41.70.391730.09
= 50 Ω, V
o
min
= 5 V, I
CE
= 5 mA
C
Γ
opt
R
n
AT-41533 Typical Scattering Parameters, Common Emitter, Z
Freq.S
GHzMagAngdBMagAngdBMagAngMagAng
0.10.79-2823.4814.932155-34.890.018760.95-11
0.50.36-9417.157.200104-25.350.054610.65-25
0.90.22-13712.774.34984-21.940.080630.58-27
1.00.20-14811.933.94881-21.210.087640.57-29
1.50.181658.772.74665-18.200.123650.56-34
1.80.191457.342.32858-16.650.147650.55-37
2.00.211346.562.12853-15.700.164650.55-39
2.40.241185.221.82344-14.020.199630.54-45
3.00.281003.681.52732-11.770.258590.53-55
4.00.35801.871.24014-8.610.371500.50-74
5.00.42610.521.0620-6.180.491370.47-97
11
AT-41533 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.10.70.4670.21
0.91.00.29860.13
1.81.40.36-1630.07
2.41.60.53-1260.15
= 50 Ω, V
o
min
= 5 V, I
CE
S
= 5 mA
C
Γ
opt
21
4-139
Figure 14. AT-41511 Gains vs.
Frequency at VCE = 5 V, IC = 5 mA.
= 50 Ω, V
o
S
12
R
n
= 5 V, IC = 5 mA
CE
S
22
30
25
MSG
20
15
GAIN (dB)
10
5
0
0
Figure 15. AT-41533 Gains vs.
Frequency at VCE = 5 V, IC = 5 mA.
MAG
S21
145
FREQUENCY (GHz)
MSG
3
2
AT-41511 Typical Scattering Parameters, Common Emitter, Z
Freq.S
11
S
21
= 50 Ω, V
o
S
12
= 5 V, IC = 25 mA
CE
S
22
GHzMagAngdBMagAngdBMagAngMagAng
0.10.51-743032.792140-390.011650.80-19
0.50.46-1612010.25995-310.028620.51-21
0.90.47177155.83080-270.043660.48-23
1.00.47173145.25778-270.047670.48-24
1.50.48157113.55365-230.068680.47-30
1.80.4914892.98358-220.081680.48-34
2.00.4914292.69254-210.090670.48-36
2.40.5113272.25446-190.108650.48-42
3.00.5411851.82534-170.135610.47-51
4.00.599731.38616-150.183540.46-66
5.00.638111.1130-130.234470.46-84
30
MSG
AT-41511 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.11.60.08140.18
0.91.90.111650.16
1.82.30.28-1530.18
2.42.70.39-1340.22
= 50 Ω, V
o
min
= 5 V, I
CE
= 25 mA
C
Γ
opt
R
n
AT-41533 Typical Scattering Parameters, Common Emitter, Z
Freq.S
11
S
21
= 50 Ω, V
o
S
25
20
15
GAIN (dB)
10
5
0
Figure 16. AT-41511 Gains vs.
Frequency at VCE = 5 V, IC = 25 mA.
= 5 V, IC = 25 mA
CE
12
MAG
S21
0
2
145
FREQUENCY (GHz)
S
3
22
GHzMagAngdBMagAngdBMagAngMagAng
0.10.37-6230.0031.606129-37.720.013730.74-19
0.50.13-15318.468.37589-26.200.049760.51-19
0.90.1316313.564.76476-21.310.086750.49-23
1.00.1315412.684.30573-20.450.095740.49-25
1.50.171289.382.94561-16.950.142710.48-31
1.80.191177.932.49354-15.390.170680.48-35
2.00.201117.142.27450-14.470.189660.48-38
2.40.231025.801.94942-12.840.228620.47-44
3.00.27904.251.63231-10.840.287560.45-54
4.00.33762.481.33114-8.130.392450.42-74
5.00.39601.191.147-1-6.090.496320.38-97
30
MSG
AT-41533 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.11.30.08130.12
0.91.60.19-1700.10
1.81.90.42-1260.16
2.42.10.55-1050.32
= 50 Ω, V
o
min
= 5 V, I
CE
= 25 mA
C
Γ
opt
4-140
R
n
25
20
15
GAIN (dB)
10
5
0
0
Figure 17. AT-41533 Gains vs.
Frequency at VCE = 5 V, IC = 25 mA.
MAG
S21
145
FREQUENCY (GHz)
MSG
3
2
MSG
AT-41511 Typical Scattering Parameters, Common Emitter, Z
GAIN (dB)
0
30
0
FREQUENCY (GHz)
145
25
15
5
3
20
10
2
MSG
MAG
MSG
S21
GAIN (dB)
0
30
0
FREQUENCY (GHz)
145
25
15
5
3
20
10
2
MSG
MAG
MSG
S21
Freq.S
11
S
21
= 50 Ω, V
o
S
12
= 8 V, IC = 10 mA
CE
S
22
GHzMagAngdBMagAngdBMagAngMagAng
0.10.75-3627.7124.305155-37.720.013730.92-13
0.50.47-11921.2411.535106-28.870.036530.60-27
0.90.41-15516.806.92188-26.200.049550.51-28
1.00.40-16115.966.28184-25.680.052560.50-29
1.50.3917412.664.29470-23.100.070580.48-32
1.80.4016211.163.61563-21.830.081590.48-35
2.00.4015510.293.26959-21.110.088580.48-37
2.40.421438.772.74550-19.660.104580.48-41
3.00.441266.952.22638-17.860.128550.47-48
4.00.511044.601.69819-15.440.169500.46-61
5.00.56872.731.3703-13.390.214450.46-76
AT-41511 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.11.10.4070.27
0.91.30.33620.20
1.81.60.271350.13
2.41.80.351780.10
= 50 Ω, V
o
min
= 8 V, I
CE
= 10 mA
C
Γ
opt
R
n
AT-41533 Typical Scattering Parameters, Common Emitter, Z
Freq.S
GHzMagAngdBMagAngdBMagAngMagAng
0.10.65-3727.4523.576145-35.920.016730.88-15
0.50.20-10018.608.50997-26.200.049690.57-23
0.90.11-14613.894.94781-21.830.081710.54-25
1.00.09-16113.034.48278-20.920.090700.53-26
1.50.111449.773.08164-17.590.132690.52-32
1.80.131258.342.61158-16.030.158670.51-35
2.00.141167.532.37953-15.090.176650.51-38
2.40.171046.202.04145-13.470.212620.50-43
3.00.22914.661.71033-11.400.269570.49-52
4.00.28772.901.39616-8.610.371470.46-71
5.00.35621.611.2041-6.450.476350.43-92
11
AT-41533 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.10.80.40130.18
0.91.10.20930.12
1.81.50.32-1540.09
2.41.70.49-1210.17
= 50 Ω, V
o
min
= 8 V, I
CE
S
21
= 10 mA
C
Γ
opt
4-141
Figure 18. AT-41511 Gains vs.
Frequency at VCE = 8 V, IC = 10 mA.
= 50 Ω, V
o
S
12
R
n
Figure 19. AT-41533 Gains vs.
Frequency at VCE = 8 V, IC = 10 mA.
= 8 V, IC = 10 mA
CE
S
22
AT-41511 Typical Scattering Parameters, Common Emitter, Z
GAIN (dB)
0
30
0
FREQUENCY (GHz)
145
25
15
5
3
20
10
2
MSG
MAG
MSG
S21
GAIN (dB)
0
30
0
FREQUENCY (GHz)
145
25
15
5
3
20
10
2
MSG
MAG
MSG
S21
Freq.S
11
S
21
= 50 Ω, V
o
S
12
= 8 V, IC = 25 mA
CE
S
22
GHzMagAngdBMagAngdBMagAngMagAng
0.10.55-6530.4433.264142-39.170.011660.82-17
0.50.44-15520.6910.83296-31.370.027610.54-21
0.90.44-17915.836.19081-27.540.042660.50-22
1.00.4417614.955.58878-26.740.046670.50-23
1.50.4515911.553.77966-23.610.066670.49-29
1.80.4615010.033.17359-22.160.078670.50-32
2.00.461449.142.86555-21.310.086660.50-35
2.40.481337.612.40146-19.660.104650.50-40
3.00.511195.781.94535-17.720.130610.49-48
4.00.57993.391.47717-15.090.176550.49-63
5.00.61831.491.1871-12.920.226480.48-80
AT-41511 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.11.60.08100.20
0.91.90.101000.19
1.82.30.22-1700.18
2.42.70.32-1470.18
= 50 Ω, V
o
min
= 8 V, I
CE
= 25 mA
C
Γ
opt
R
n
AT-41533 Typical Scattering Parameters, Common Emitter, Z
Freq. S
GHzMagAngdBMagAngdBMagAngMagAng
0.10.41-5730.1132.026130-37.720.013730.76-18
0.50.11-13818.758.66490-26.380.048760.52-19
0.90.1016813.874.93877-21.510.084750.50-22
1.00.1015612.994.46074-20.630.093740.50-24
1.50.141269.703.05462-17.140.139710.49-31
1.80.161158.252.58555-15.600.166680.49-34
2.00.171087.452.35951-14.660.185660.49-37
2.40.20996.112.02043-13.030.223620.48-43
3.00.24894.561.69132-11.030.281560.46-53
4.00.30752.801.38015-8.310.384450.43-72
5.00.37611.511.1900-6.250.487330.39-94
11
AT-41533 Typical Noise Parameters,
Common Emitter, Z
FreqF
GHzdBMagAng-
0.11.30.07180.16
0.91.60.121640.12
1.81.90.36-1340.15
2.42.10.51-1090.28
= 50 Ω, V
o
min
= 8 V, I
CE
S
21
= 25 mA
C
Γ
opt
4-142
R
n
= 50 Ω, V
o
S
12
Figure 20. AT-41511 Gains vs.
Frequency at VCE = 8 V, IC = 25 mA.
= 8 V, IC = 25 mA
CE
S
22
Figure 21. AT-41533 Gains vs.
Frequency at VCE = 8 V, IC = 25 mA.
Package Dimensions
SOT-143 Plastic Package
0.92 (0.036)
0.78 (0.031)
PACKAGE
MARKING
CODE
E
XXX
B
0.60 (0.024)
0.45 (0.018)
2.04 (0.080)
1.78 (0.070)
3.06 (0.120)
2.80 (0.110)
C
E
0.10 (0.004)
0.013 (0.0005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
SOT-23 Plastic Package
1.02 (0.040)
0.89 (0.035)
0.54 (0.021)
0.37 (0.015)
1.40 (0.055)
1.20 (0.047)
0.54 (0.021)
0.37 (0.015)
1.02 (0.041)
0.85 (0.033)
2.65 (0.104)
2.10 (0.083)
0.15 (0.006)
0.09 (0.003)
0.69 (0.027)
0.45 (0.018)
PACKAGE
MARKING
CODE
0.60 (0.024)
0.45 (0.018)
0.10 (0.004)
0.013 (0.0005)
3
XXX
12
2.04 (0.080)
1.78 (0.070)
TOP VIEW
3.06 (0.120)
2.80 (0.110)
SIDE VIEWEND VIEW
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.40 (0.055)
1.20 (0.047)
1.02 (0.041)
0.85 (0.033)
2.65 (0.104)
2.10 (0.083)
0.152 (0.006)
0.066 (0.003)
0.69 (0.027)
0.45 (0.018)
4-143
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