HP AT-33225-TR1, AT-33225-BLK Datasheet

4.8 V NPN Common Emitter
Output Power Transistor
for␣ AMPS, ET ACS Phones

Technical Data

AT-33225

Features

• 4.8 Volt Operation

• +31.0 dBm P
Typ.

• 70% Collector Efficiency
@␣ 900 MHz, Typ.

• 9 dB Power Gain @ 900 MHz,
Typ.

• -29 dBc IMD3 @ P
24␣ dBm per tone, 900 MHz,
Typ.

• Internal Input Pre-Matching
Facilitates Cascading

• 50% Smaller than SOT-223
Package

@ 900 MHz,

out

of

out

Applications

• Output Power Device for
AMPS and ETACS Handsets

• 900 MHz ISM

MSOP-3 Surface Mount Plastic Package

Outline 25

Pin Configuration

COLLECTOR

4

EMITTER

12

BASE

3

EMITTER

Description

Hewlett Packard’s AT-33225 is a
low cost, NPN power silicon
bipolar junction transistor housed
in a miniature MSOP-3 surface
mount plastic package. This
device is designed for use as an
output device for AMPS and
ETACS mobile phones. The
AT-33225 features over 1 watt
CW␣ output power when operated
at 4.8 volts. Excellent gain and
superior efficiency make the
AT-33225 ideal for use in battery
powered systems.

The AT-33225 is fabricated with
Hewlett Packard’s 10 GHz Ft Self­Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self­alignment techniques, and gold
metalization in the fabrication of
these devices.

4-71

5965-5910E

AT-33225 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

EBO

V

CBO

V

CEO

I

C

P

T

T

j

T

STG

Emitter-Base Voltage V 1.4
Collector-Base Voltage V 16.0
Collector-Emitter Voltage V 9.5
Collector Current mA 640
Power Dissipation

[2]

W 1.6

Junction Temperature °C 150
Storage Temperature °C -65 to 150

[1]

Thermal Resistance

[3]

:

θjc = 40°C/W

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. Derate at 25 mW/°C for T

Tc is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.

3. Using the liquid crystal technique,

= 4.5 V, Ic= 100 mA, T

V

CE

1-2␣ µm “hot-spot” resolution.

> 85°C.

C

=150°C,

j

Electrical Specifications, T

= 25° C

C

Symbol Parameters and Test Conditions Units Min. Typ. Max.

Freq. = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A,
unless otherwise specified

P

out

η

C

Output Power

Collector Efficiency

IMD33rd Order Intermodulation Distortion, 2 Tone Test, F1 = 899 MHz dBc -29

P

each Tone = +24 dBm

out

Mismatch Tolerance, No Damage

[1]

[1]

[1]

[1]

Pin = +22 dBm dBm +30.0 +31.0

Pin = +22 dBm % 60 70

F2 = 901 MHz

P

= +31 dBm 7:1

out

any phase, 2 sec duration

BV

BV

BV

h

FE

I

CEO

Note:

1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (ETACS/ISM).

Emitter-Base Breakdown Voltage IE = 0.4 mA, open collector V 1.4

EBO

Collector-Base Breakdown Voltage IC = 2.0 mA, open emitter V 16.0

CBO

Collector-Emitter Breakdown Voltage IC = 10.0 mA, open base V 9.5

CEO

Forward Current Transfer Ratio VCE = 3 V, IC = 180 mA — 80 150 330

Collector Leakage Current V

= 5 V µA30

CEO

4-72

AT-33225 Typical Performance, T

= 25° C

C

Frequency = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A (ETACS/ISM), unless otherwise specified.

33

Γ

= 0.82 ∠ -163

source

30

Γ

= 0.67 ∠ -174

load

27

(dBm)

24
21

18
15
12

OUTPUT POWER

9
6

214610 18 2422

P

out

η

INPUT POWER (dBm)

c

90
80
70
60

50
40

30
20
10

0

Figure 1. Output Power and Collector
Efficiency vs. Input Power.

35

Γ

= 0.82 ∠ -163

source

Γ

= 0.67 ∠ -174

load

30

(%)

25

(dBm)

20

15

10

OUTPUT POWER

5

COLLECTOR EFFICIENCY

0

214610 18 2422 214610 18 2422

INPUT POWER (dBm)

3.6 V

4.8 V

6.0 V

Figure 2. Output Power vs. Input
Power Over Bias Voltage.

90

Γ

= 0.82 ∠ -163

source

80

Γ

= 0.67 ∠ -174

load

(%)

70
60
50
40
30
20

COLLECTOR EFFICIENCY

10

0

INPUT POWER (dBm)

3.6 V

4.8 V

6.0 V

Figure 3. Collector Efficiency vs.
Input Power Over Bias Voltage.

34

Γ

= 0.82 ∠ -163

source

30

Γ

= 0.67 ∠ -174

load

26

(dBm)

22

18

14

OUTPUT POWER

10

6

214610 18 2422

INPUT POWER (dBm)

TC = +85°C

= +25°C

T

C

= –40°C

T

C

Figure 4. Output Power vs. Input
Power Over Temperature.

-15

Γ

= 0.82 ∠ -163

source

Γ

= 0.67 ∠ -174

load

-20

-25

(dBc)

-30

IMD

-35

-40

-45
11 1713 15 19 21 25 2723

OUTPUT POWER/TONE (dBm)

IMD

3

IMD

5

Figure 5. IMD3, IMD5 vs. Output
Power Per Tone.

5

Γ

= 0.82 ∠ -163

source

0

Γ

= 0.67 ∠ -174

load

-5

(dB)

-10

-15

-20

RETURN LOSS

-25

-30
800 850 950 1000900

Output R.L.

Input R.L.

FREQUENCY (MHz)

Figure 6. Input and Output Return
Loss vs. Frequency.

4-73