Datasheet AT-33225-TR1, AT-33225-BLK Datasheet (HP)

4.8 V NPN Common Emitter
Output Power Transistor
for␣ AMPS, ET ACS Phones

Technical Data

AT-33225

Features

• 4.8 Volt Operation

• +31.0 dBm P
Typ.

• 70% Collector Efficiency
@␣ 900 MHz, Typ.

• 9 dB Power Gain @ 900 MHz,
Typ.

• -29 dBc IMD3 @ P
24␣ dBm per tone, 900 MHz,
Typ.

• Internal Input Pre-Matching
Facilitates Cascading

• 50% Smaller than SOT-223
Package

@ 900 MHz,

out

of

out

Applications

• Output Power Device for
AMPS and ETACS Handsets

• 900 MHz ISM

MSOP-3 Surface Mount Plastic Package

Outline 25

Pin Configuration

COLLECTOR

4

EMITTER

12

BASE

3

EMITTER

Description

Hewlett Packard’s AT-33225 is a
low cost, NPN power silicon
bipolar junction transistor housed
in a miniature MSOP-3 surface
mount plastic package. This
device is designed for use as an
output device for AMPS and
ETACS mobile phones. The
AT-33225 features over 1 watt
CW␣ output power when operated
at 4.8 volts. Excellent gain and
superior efficiency make the
AT-33225 ideal for use in battery
powered systems.

The AT-33225 is fabricated with
Hewlett Packard’s 10 GHz Ft Self­Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self­alignment techniques, and gold
metalization in the fabrication of
these devices.

4-71

5965-5910E

AT-33225 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

EBO

V

CBO

V

CEO

I

C

P

T

T

j

T

STG

Emitter-Base Voltage V 1.4
Collector-Base Voltage V 16.0
Collector-Emitter Voltage V 9.5
Collector Current mA 640
Power Dissipation

[2]

W 1.6

Junction Temperature °C 150
Storage Temperature °C -65 to 150

[1]

Thermal Resistance

[3]

:

θjc = 40°C/W

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. Derate at 25 mW/°C for T

Tc is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.

3. Using the liquid crystal technique,

= 4.5 V, Ic= 100 mA, T

V

CE

1-2␣ µm “hot-spot” resolution.

> 85°C.

C

=150°C,

j

Electrical Specifications, T

= 25° C

C

Symbol Parameters and Test Conditions Units Min. Typ. Max.

Freq. = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A,
unless otherwise specified

P

out

η

C

Output Power

Collector Efficiency

IMD33rd Order Intermodulation Distortion, 2 Tone Test, F1 = 899 MHz dBc -29

P

each Tone = +24 dBm

out

Mismatch Tolerance, No Damage

[1]

[1]

[1]

[1]

Pin = +22 dBm dBm +30.0 +31.0

Pin = +22 dBm % 60 70

F2 = 901 MHz

P

= +31 dBm 7:1

out

any phase, 2 sec duration

BV

BV

BV

h

FE

I

CEO

Note:

1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (ETACS/ISM).

Emitter-Base Breakdown Voltage IE = 0.4 mA, open collector V 1.4

EBO

Collector-Base Breakdown Voltage IC = 2.0 mA, open emitter V 16.0

CBO

Collector-Emitter Breakdown Voltage IC = 10.0 mA, open base V 9.5

CEO

Forward Current Transfer Ratio VCE = 3 V, IC = 180 mA — 80 150 330

Collector Leakage Current V

= 5 V µA30

CEO

4-72

AT-33225 Typical Performance, T

= 25° C

C

Frequency = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A (ETACS/ISM), unless otherwise specified.

33

Γ

= 0.82 ∠ -163

source

30

Γ

= 0.67 ∠ -174

load

27

(dBm)

24
21

18
15
12

OUTPUT POWER

9
6

214610 18 2422

P

out

η

INPUT POWER (dBm)

c

90
80
70
60

50
40

30
20
10

0

Figure 1. Output Power and Collector
Efficiency vs. Input Power.

35

Γ

= 0.82 ∠ -163

source

Γ

= 0.67 ∠ -174

load

30

(%)

25

(dBm)

20

15

10

OUTPUT POWER

5

COLLECTOR EFFICIENCY

0

214610 18 2422 214610 18 2422

INPUT POWER (dBm)

3.6 V

4.8 V

6.0 V

Figure 2. Output Power vs. Input
Power Over Bias Voltage.

90

Γ

= 0.82 ∠ -163

source

80

Γ

= 0.67 ∠ -174

load

(%)

70
60
50
40
30
20

COLLECTOR EFFICIENCY

10

0

INPUT POWER (dBm)

3.6 V

4.8 V

6.0 V

Figure 3. Collector Efficiency vs.
Input Power Over Bias Voltage.

34

Γ

= 0.82 ∠ -163

source

30

Γ

= 0.67 ∠ -174

load

26

(dBm)

22

18

14

OUTPUT POWER

10

6

214610 18 2422

INPUT POWER (dBm)

TC = +85°C

= +25°C

T

C

= –40°C

T

C

Figure 4. Output Power vs. Input
Power Over Temperature.

-15

Γ

= 0.82 ∠ -163

source

Γ

= 0.67 ∠ -174

load

-20

-25

(dBc)

-30

IMD

-35

-40

-45
11 1713 15 19 21 25 2723

OUTPUT POWER/TONE (dBm)

IMD

3

IMD

5

Figure 5. IMD3, IMD5 vs. Output
Power Per Tone.

5

Γ

= 0.82 ∠ -163

source

0

Γ

= 0.67 ∠ -174

load

-5

(dB)

-10

-15

-20

RETURN LOSS

-25

-30
800 850 950 1000900

Output R.L.

Input R.L.

FREQUENCY (MHz)

Figure 6. Input and Output Return
Loss vs. Frequency.

4-73

AT-33225 Typical Performance, T

= 25° C

C

Frequency = 836.5 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit B (AMPS), unless otherwise specified.

33

Γ

= 0.81 ∠ -165

source

30

Γ

= 0.66 ∠ -174

load

27

(dBm)

24
21

18
15
12

OUTPUT POWER

9

6

214610 18 2422

P

out

η

INPUT POWER (dBm)

c

90
80
70
60

50
40

30
20
10

0

Figure 7. Output Power and Collector
Efficiency vs. Input Power.

5

Γ

= 0.81 ∠ -165

source

Γ

= 0.66 ∠ -174

load

0

35

Γ

= 0.81 ∠ -165

source

Γ

= 0.66 ∠ -174

load

30

(%)

25

(dBm)

20

15

10

OUTPUT POWER

5

COLLECTOR EFFICIENCY

0

214610 18 2422

INPUT POWER (dBm)

3.6 V

4.8 V

6.0 V

Figure 8. Output Power vs. Input
Power Over Bias Voltage.

90

Γ

= 0.81 ∠ -165

source

80

Γ

= 0.66 ∠ -174

load

(%)

70
60
50
40
30
20

COLLECTOR EFFICIENCY

10

0

214610 18 2422

INPUT POWER (dBm)

3.6 V

4.8 V

6.0 V

Figure 9. Collector Efficiency vs.
InputPower Over Bias Voltage.

(dB)

-5

-10

-15

RETURN LOSS

-20

-25
750 800 850 950900

Output R.L.

Input R.L.

836.5

FREQUENCY (MHz)

Figure 10. Input and Output Return
Loss vs. Frequency.

4-74

AT-33225 Typical Large Signal Impedances

6.0

6.5

7.0

10.0

9.5

8.5

9.0

7.5

8.0

0462108

Ccb

(pF)

Vcb (V)

Figure 11. Collector-Base
Capacitance vs. Collector-Base
Voltage (DC Test).

VCE = 4.8 V, ICQ = 6 mA, P

= +31.0 dBm

out

Freq. Γ

MHz Mag. Ang. Mag. Ang.

750 0.77 -162 0.64 -174
800 0.80 -169 0.67 -173
850 0.82 -164 0.64 -175
900 0.82 -163 0.67 -174
950 0.83 -166 0.74 -175

SPICE Model Parameters

Die Model Packaged Model

CPad

E1

Label

TR
EG

IS

XTI
CJC
VJC
MJC

XCJC

FC
CJE
VJE
MJE

RB

IRB

RBM

RE

RC

CPad

3.598E-15

0.8E-12

6.16E-12

B

Die Area = 1.2
CPad = 0.3 pF

Label

BF
IKF
ISE

NE

VAF

NF

TF

XTF
VTF

ITF

PTF
XTB

BR
IKR
ISC

NC

VAR

NR

Value

280

299.9

9.9E-11

2.399

33.16

0.9935

1.6E-11

0.006656

0.02785

0.001
23

0

54.61
81

8.7E-13

1.587

1.511

0.9886

source

Value

1E-9

1.11
3

0.4831

0.2508

0.001

0.999

1.186

0.5965

0.752
0

0.01

1.27

0.107

E2

C

CPad

Γ

4-75

load

B

LB1 R1

Cbe

RB

LB2RBLB3

RB

LB2

Label

Cbc
Cbe
Cce
CM
LB1
LB2
LB3
LE1
LE2
LC1

RB
R1

Cbc

CM

RB

LB3

CM

Value

0.80 pF

0.006 pF

3.17 pF

20.8 pF

0.63 nH

0.10 nH

0.87 nH

0.35 nH

0.78 nH

0.74 nH

0.1 Ω

0.2 Ω

LE2

LE2

Die

LE2

Die

LE2

E

R1

LE1

LC1

Cce

C

AT-33225 Typical Scattering Parameters, Common Emitter, Z

VCE = 3.6 V, IC = 200 mA, T

Freq. S

11

= 25° C

C

S

21

S

12

= 50 Ω

O

S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.05 0.88 -164 27.0 22.26 99 -34.9 0.018 26 0.58 -153

0.10 0.89 -174 21.2 11.42 91 -34.0 0.020 32 0.57 -168

0.25 0.88 178 13.6 4.80 79 -30.5 0.030 47 0.56 -179

0.50 0.85 172 9.1 2.85 62 -25.8 0.051 51 0.49 175

0.75 0.77 168 8.2 2.58 38 -23.2 0.069 40 0.34 -177

0.90 0.70 171 8.5 2.67 13 -23.4 0.068 25 0.36 -142

1.00 0.71 178 8.2 2.57 -10 -26.0 0.050 14 0.59 -133

1.25 0.93 178 2.3 1.30 -68 -26.6 0.047 93 0.98 -162

1.50 0.98 169 -5.5 0.53 -97 -20.5 0.094 86 0.97 180

1.75 0.98 163 -13.6 0.21 -119 -18.1 0.125 78 0.93 170

2.00 0.98 159 -23.2 0.07 -163 -16.4 0.151 72 0.90 164

22

VCE = 4.8 V, IC = 150 mA, T

= 25° C

C

0.05 0.87 -162 27.1 22.76 100 -34.4 0.019 25 0.55 -149

0.10 0.88 -172 21.4 11.69 91 -33.6 0.021 30 0.53 -166

0.25 0.88 179 13.8 4.91 78 -30.2 0.031 44 0.52 -178

0.50 0.85 172 9.2 2.89 61 -26.0 0.050 49 0.45 177

0.75 0.78 169 8.2 2.58 37 -23.6 0.066 39 0.33 -171

0.90 0.72 172 8.4 2.62 13 -24.0 0.063 26 0.38 -138

1.00 0.72 178 8.1 2.53 -9 -26.4 0.048 17 0.59 -132

1.25 0.93 177 2.6 1.35 -66 -26.7 0.046 93 0.98 -161

1.50 0.98 169 -5.1 0.56 -97 -20.5 0.094 86 0.97 -179

1.75 0.98 163 -13.0 0.22 -119 -18.1 0.125 78 0.92 171

2.00 0.98 159 -22.2 0.08 -159 -16.5 0.150 72 0.90 165

VCE = 6.0 V, IC = 150 mA, T

= 25° C

C

0.05 0.87 -161 27.3 23.07 100 -34.4 0.019 25 0.54 -149

0.10 0.88 -172 21.5 11.86 91 -33.6 0.021 30 0.52 -166

0.25 0.88 179 13.9 4.97 78 -30.5 0.030 44 0.51 -178

0.50 0.85 173 9.3 2.93 61 -26.2 0.049 49 0.44 177

0.75 0.78 169 8.3 2.59 37 -23.7 0.065 39 0.32 -169

0.90 0.72 172 8.4 2.63 13 -24.2 0.062 26 0.38 -137

1.00 0.73 177 8.1 2.53 -9 -26.6 0.047 18 0.60 -131

1.25 0.92 177 2.7 1.37 -65 -26.7 0.046 94 0.98 -160

1.50 0.98 169 -5.0 0.57 -96 -20.5 0.094 86 0.97 -179

1.75 0.98 163 -12.7 0.23 -119 -18.1 0.125 78 0.92 171

2.00 0.98 158 -21.7 0.08 -158 -16.5 0.150 72 0.90 165

Typical Performance

40

30

20

10

(dB)

GAIN

-10

MSG

MAG

2

|S

|

0

21

MSG

40

30

20

10

(dB)

GAIN

-10

40

MSG

MAG

2

|S

|

21

0

MSG

30

20

10

(dB)

GAIN

-10

MSG

MAG

2

|S

|

0

21

MSG

-20

-30

0.05 1.000.25 0.75 1.50 2.00
FREQUENCY (GHz)

Figure 12. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency, V

= 200 mA.

I

C

= 3.6 V,

CE

-20

-30

0.05 1.000.25 0.75 1.50 2.00
FREQUENCY (GHz)

Figure 13. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency, V

= 150 mA.

I

C

4-76

= 4.8 V,

CE

-20

-30

0.05 1.000.25 0.75 1.50 2.00
FREQUENCY (GHz)

Figure 14. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency, V

= 150 mA.

I

C

= 6.0 V,

CE

Test Circuit A: Test Circuit Board Layout @ 900 MHz (ETACS/ISM)

V

C8 C9

C7

CC

V

CC

9/96

C10

OUTPUTINPUT

C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2

38.1 (1.5)

V

BB

V

BB

T1

R1

R2
R3

C2

C3

R4

L1

C4C1

PA3 DEMO

76.2 (3.0)

CW Test

V

= 4.8 V

CE

= 6.0 mA

I

CQ

Freq. = 900 MHz

NOTE:
Dimensions are shown in millimeters (inches).

Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)

C5

L2

R5

C6

B–MFG0141

100.0 pF

100.0 pF

100.0 nF

7.5 pF

100.0 nF

100.0 pF

5.1 pF

1.5 µF

10.0 µF

100.0 pF

2.2 Ω

750.0 Ω

2.2 Ω

10.0 Ω

10.0 Ω

MBT 2222A

18.0 µH

18.0 µH

Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (ETACS/ISM)

B

CE

RF IN

2.2 Ω

DC
Transistor

750 Ω

2.2 Ω
10 Ω

18 µH

100 pF

7.5 pF = 7.06 (.278)

V

BB

CW Test

= 4.8 V

V

CE

= 6.0 mA

I

CQ

Freq. = 900 MHz

100 nF

100 pF 100 pF

80 Ω 80 Ω

λ/4 @ 900 MHz λ/4 @ 900 MHz

50 Ω

= 14.35 (.565)

4-77

10 Ω

100 nF 1.5 µF 10 µF

18 µH

50 Ω

5.1 pF

V

CC

100 pF

RF OUT

Test Circuit B: Test Circuit Board Layout @ 836.5 MHz (AMPS)

C7

V

CC

C8 C9

V

CC

9/96

C10

OUTPUTINPUT

38.1 (1.5)

V

BB

V

C1

BB

T1

R1

R2
R3

C2

L1

R4

C4

C3

PA3 DEMO

76.2 (3.0)

CW Test

V

= 4.8 V

CE

= 6.0 mA

I

CQ

Freq. = 836.5 MHz

NOTE:
Dimensions are shown in millimeters (inches).

Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)

R5

C5

C6

L2

B–MFG0141

C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2

100.0 pF

100.0 nF

9.5 pF

100.0 pF

100.0 pF

100.0 nF

6.8 pF

1.5 µF

10.0 µF

100.0 pF

2.2 Ω

750.0 Ω

2.2 Ω

10.0 Ω

10.0 Ω

MBT 2222A

18.0 µH

18.0 µH

Test Circuit B: Test Circuit Schematic Diagram @ 836.5 MHz (AMPS)

B

CE

RF IN

V

2.2 Ω

DC
Transistor

750 Ω

2.2 Ω
10 Ω

18 µH

100 pF

9.5 pF = 7.19 (.283)

BB

CW Test

V

= 4.8 V

CE

= 6.0 mA

I

CQ

Freq. = 836.5 MHz

100 nF

100 pF 100 pF

80 Ω 80 Ω

λ/4 @ 836.5 MHz λ/4 @ 836.5 MHz

50 Ω

50 Ω

= 12.65 (.498)

4-78

10 Ω

100 nF 1.5 µF 10 µF

18 µH

6.8 pF

V

CC

100 pF

RF OUT

Part Number Ordering Information

Part Number No. of Devices Container

AT-33225-TR1 1000 7" Reel

AT-33225-BLK 25 Carrier Tape

Package Dimensions

MSOP-3 Surface Mount Plastic Package

3.12/3.23

(.123/.127)

R 0.25 (.010) MAX

0.18/0.25

(.007/.010)

SEE DETAIL A

4.62/5.03

(.182/.198)

0.51 (.020) DIA X

0.15 (.006) DEEP
REF

0.76 REF
(.030)

PIN 1

0.76 REF
(.030)

SEATING

PLANE

0.10/0.25

(.004/.010)

1.91

(.075)

BASIC

TOP VIEW

SIDE VIEW

0.41/0.86

(.016/.034)

DETAIL A

4.80/5.00

(.189/.197)

0.58/0.69

(.023/.027)

2.64/2.82

(.104/.111)

1.09/1.42

(.043/.056)

LEAD TIP
COPLANARITY

R 0.20 (.008) MIN

R 0.20/0.33

(.008/.013)

0.25 (.010)
GAUGE PLANE

0° MIN/8° MAX

1.22/1.60

(.048/.063)

0.10 (.004)

SEATING
PLANE

NOTE:
DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)

4-79

Tape Dimensions and Product Orientation for Package MSOP-3

REEL

CARRIER

TAPE

USER
FEED
DIRECTION

COVER TAPE

2.00 ± 0.05

(.079 ± .002)

1.75 (.069)

4.0 (.157)

1.5 (.059)

0.30 ± 0.05

(.012 ± .002)

5.50 ± 0.05

(.217 ± .002)

R 0.5 (.020) TYP

NOTES:

1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)

2. TOLERANCES: .X ± 0.1 (.XXX ± .004)

8.0

(.315)

1.5

(.059)

5.2

(.205)

5.2

(.205)

12.0 ± 0.3

(.472 ± .012)

R 0.3
(.012)

1.75

(.069)

4-80