
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
SILICON ZENER DIODE
FEATURES :
Complete Voltage Range 3.3 to 200 Volts
High peak reverse power dissipation
High reliability
Low leakage current
MECHANICAL DATA
Case : DO-15 Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.4 gram
DO-15
1.00 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
DC Power Dissipation at TL= 75 C (Note1)
Maximum Forward Voltage at IF = 1 A
Junction Temperature Range
Storage Temperature Range
0.034 (0.86)
0.028 (0.71)
P
D
, MAXIMUM DISSIPATION
(WATTS)
MAXIMUM RATINGS
Note :
(1) TL = Lead temperature at 3/8 " (9.5mm) frombody
Rating at 25°C ambient temperature unless otherwise specified
Fig. 1 POWER TEMPERATURE DERATING CURVE
5
4
3
2
1
TL, LEAD TEMPERATURE (C)

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
SILICON ZENER DIODE
Maximum Reverse
Leakage Current
ELECTRICAL CHARACTERISTICS
(Rating at 25 °C ambient temperature unless otherwise specified)
Note : (1) Suffix " B " indicates ± 5% tolerance, suffix " A " indicates ± 10% tolerance.

SILICON ZENER DIODE
RATINGS AND CHARACTERISTIC CURVES
1N5333B-1N5388B
FIG.1 --FORWARD DERATING CURVE
8
6
4
L-LEAD LENGTH
TO HEAT SINK
AMPERES
2
0
020 6040
AVERAGE FORWARD CURRENT
100 120 14080 160 180 200
AMBIENT TEMPERATURE,
FIG.3 -- TYP ICAL THERMAL RESI STANCE
30
20
10
RESISTANCE /W)
0
0.2 .440.6 .8 1
L/LEAD LENGTH TO HEAT SINK(INCH)
ΘJL.JUNCTION-TO-LEAD THERMAL RESIST
FIG.2 -- TEMPERATURE COEF FI CIENT RANGE
300
200
100
ZT
50
@I
J
20
10
(mv)C
5
θVz TEMPERATURE COEFFICIENT
0 20 16040 80 120 200
60 100 140 180 220 240
Vz,ZENER VOLTACE @IZT(VOLTS)
RANGE
FIG.4 -- MAXI MUM NON- REPETITIV E SURGE CURRENT
40
20
10
4
2
1
AMPERES
.4
.2
.1
28 40
4 5 10 20 30 60 80 100 200
PEAK FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
FIG.5 -- TYP ICAL THERMAL RESP ONSE
20
D=0.5
10
D=0.2
5
JUNCTION-TO-LEAD /W
ΘJl(1.D)TRANSIENT THERMAL RESISTANCE
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
D=0.1
D=0.05
2
D=0.01
1
.5
D=0
.2
.001 .01 5.1 20 100.5
TIME
SECONDS
50101.005 .05
3
/ 4

SILICON ZENER DIODE
1N5333B-1N5388B
FIG.6 -- PEAK SURGE CURRENT VERSUS PULSE WIDTH
30
20
10
5
2
1
.5
.2
.1
r.PEAK SURGE CURRENT(AMPS)
I
110 1000100
VZ=6.8V
VZ=200V
PW, PULSE WIDTH(ms ) Vz , ZENER V OLTAGE(VOLTS)
FIG.8 -- ZENER VOLTAGE VERSUS ZENER CURRENT
Vz=11 THRU 75 VOLTS
FIG.7 -- ZENER VOLTAGE VERSUS ZENER CURRENT
Vz=6.8 THRU 10 VOLTS
℃
1000
100
10
℃
Tc=25
1
T=25
Iz,ZENER CURRENT(mA)
.1
12 4310
57689
FIG.9 -- ZENER VOLTAGE VERSUS ZENER CURRENT
Vz=82 THRU 200 VOLTS
1000
1000
100
10
1
Iz,ZENER CURRENT(mA)
.1
10 20 4030
Vz,ZENER VOLTAGE(VOLTS)
℃
T=25
50 7060 80
100
10
1
Iz,ZENER CURRENT(mA)
.1
80 100 140120
Vz,ZENER VOLTAGE(VOLTS)
160 200180 220
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
4
/ 4