SOT-23 Plastic-Encapsulate Transistors
BC846A,B
BC847A, B, C
BC848A, B, C
FEATURES
Ideally suited for automatic insertion
z
For Switching and AF Amplifier Applications
z
TRANSISTOR (NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC*
TJ
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 6 V
Collector Current –Continuous 0.1 A
Collector Power Dissipation 200 mW
Junction Temperature 150
Storage Temperature -65-150
=25℃ unless otherwise noted)
A
BC846
BC847
BC848
BC846
BC847
BC848
80
50
30
65
45
30
V
V
℃
℃
DEVICE MARKING
BC846A=1A; BC846B=1B;
BC847A=1E; BC847B=1F; BC847C=1G;
BC848A=1J; BC848B=1K: BC848C=1L
HKT
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SOT-23 Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage BC846
BC847
BC848
Collector-emitter breakdown voltage BC846
BC847
BC848
Emitter-base breakdown voltage
Collector cut-off current BC846
BC847
BC848
Collector cut-off current BC846
BC847
BC848
Emitter cut-off current
DC current gain BC846A,847A,848A
BC846B,847B,848B
BC847C,BC848C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions MIN TYP MAX UNIT
V
IC= 10µA, IE=0
CBO
80
50
V
30
IC= 10mA, IB=0
V
CEO
65
45
V
30
V
IE= 10µA, IC=0 6 V
EBO
V
=70 V , IE=0
CB
I
CBO
I
CEO
I
VEB=5 V , IC=0 0.1
EBO
=50 V , IE=0
V
CB
=30 V , IE=0
V
CB
V
=60 V , IB=0
CE
=45 V , IB=0
V
CE
V
=30 V , IB=0
CE
hFE VCE= 5V, IC= 2mA
V
(sat) IC=100mA, IB= 5mA 0.5 V
CE
V
(sat) IC=100mA, IB= 5mA 1.1 V
BE
= 5 V, IC= 10mA
V
f
T
C
ob
CE
f=
100MHz
V
CB
=10V,f=1MHz
0.1
0.1
110
200
420
100
220
450
800
4.5
MHz
μ
A
μ
A
μ
A
pF
HKT
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Typical Characteristics BC846A,B;BC847A, B, C;BC848A, B, C
SOT-23 Plastic-Encapsulate Transistors
HKT
Page:P4-P3
SOT-23 Plastic-Encapsulate Transistors
Typical Characteristics BC846A,B;BC847A, B, C;BC848A, B, C
HKT
Page:P4-P4
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