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FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807 (PNP)
Marking
BC817-16 BC817-25 BC817-40
6A 6B 6C
Plastic-Encapsulate Transistors
BC817-16
BC817-25
BC817-40
(NPN)
(NPN)
(NPN)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Symbol Value Unit
Collector-Base Voltage
DCollector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
50 V
45 V
5 V
500 mA
300 mW
150
-55 to +150
Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
CB
V
CE
V
EB
I
CB
I
EB
IC= 10μA, IE=0
IC= 10mA, IB=0
IE= 1μA, IC=0
VCB= 45 V , IE=0
VEB= 4V, IC=0
1. BASE
2. EMITTER SOT-23
3. COLLECTO
50 V
45 V
5 V
0.1
0.1
μA
μA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collecter capactiance
Transition frequency
CLASSIFICATION OF h
FE
Rank
Range
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
h
FE(1
h
FE(2
VCE(sat)
VBE(sat)
V
B
C
ob
f
T
VCE= 1V, IC= 100mA
VCE= 1V, IC= 500mA
IC= 500mA, IB= 50mA
IC= 500mA, IB= 50mA
VCE= 1 V, IC= 500mA
VCB=10V ,f=1MHz
VCE= 5 V, IC= 10mA
f=100MHz
100 600
40
10
100 MHz
6A 6B 6C
100-250 160-400 250-600
0.7 V
1.2 V
1.2 V
pF
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Page 2
BC817-16
BC817-25
BC817-40
Plastic-Encapsulate Transistors
Typical Characteristics
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P2
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