Page 1
FEATURES
f=10Hz to 15.7KHz,Rs=1kΩ
Plastic-Encapsulate Transistors
for general purpose, high volt
2N5551
(NPN)
As complementary types the PNP transistors 2N5401 are
recommended.
Low current(max. 600mA),High voltage(max.180V)
MARKING:2N5551
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
180 V
160 V
6 V
600 mA
625 mW
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
h
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
h
CE sat
BE sat
Transition frequency f
Collector output capacitance C
Input capacitance C
Noise figure N
CBO
CEO
EBO
CBO
EBO
FE1
FE2
T
obo
IC=100μA,IE=0 180 V
IC= 1mA, IB=0 160 V
IE= 10μA, IC=0 6 V
VCB= 120V, IE=0 50 nA
VEB= 4V, IC=0 50 nA
VCE=5V, IC=1mA 80
VCE=5V, IC=10mA 100 300
IC=10mA, IB=1mA 0.15
IC=50mA, IB=5mA 0.2
IC=10mA, IB= 1mA 1
IC=50mA, IB= 5mA 1
VCE=10V,IC=10mA,f=100MHz 100 300 MHz
VCB=10V,IE=0,f=1MHz 6 pF
VBE=0.5V,IC=0,f=1MHz 20 pF
ib
VCE=5V,Ic=0.25mA,
F
1. EMITTER
2. BASE TO-92
3. COLLECTO
V
V
8 dB
CLASSIFICATION OF HFE
Rank A B C
Range 100-150 150-200 200-300
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1
Page 2
2N5551 Typical Characteristics
Plastic-Encapsulate Transistors
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P2
Loading...