hooyi HY1707P, HY1707M, HY1707B, HY1707I, HY1707MF User Manual

HY1707P/M/B/I/MF/PS/PM

N-Channel Enhancement Mode MOSFET

Features

• 70V/80A,

R

=6mΩ (typ.) @ VGS=10V

DS(ON)

• AvalancheRated

• Reliablea ndRugged

• LeadFreeandGreenDevicesAvailable

(RoHSCompliant)

Applications

S

D

G

TO-220FB-3L

D

G

TO-220MF-3L

Pin Description

S

S

D

D

G

TO-263-2L

TO-220FB-3S

S

S

D

G

G

S

D

G

TO-262-3L

S

D

G

TO-3PS-3MTO-3PS-3L

• Power Management for Inverter Systems.

D

G

S

N-ChannelMOSFET

Ordering and Marking Information

P

HY1707

ÿ

YYXXXJWW G

HY1707

ÿ

YYXXXJWW G

BM

HY1707

ÿ

YYXXXJWW G

I

HY1707

ÿ

YYXXXJWW G

PMPSMF

HY1707

ÿ

YYXXXJWW G

Note: lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliantwith RoHS. lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classificatio n at lead-free peak refl ow temperature.
defines “Green”to mean lead-free (RoHS compliant)and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl d oes not exceed 1500ppm by weight).

HOOYI

advise

customers to obtain the latest version of relevant information to verify before placing orders.

HY1707

ÿ

YYXXXJWW G

HY1707

ÿ

YYXXXJWW G

HOOYI

reserves the right to make changes to improve reliability or manufacturability without notice, and

Package Code

M : TO-220FB-3SP : TO-220FB-3L

I : TO-262-3LB: TO-263-2L
MF: TO-220MF-3L PS: TO-3PS-3L
PM: TO-3PS-3M

Date Code

YYXXX WW

Assembly Material

G : Lead Free Device

HOOYI

HOOYI

1

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151015

HY1707P/M/B/I/MF/PS/PM

Absolute Maximum Ratings

Symbol

Common Ratings (T

Mounted on Large Heat Sink

V

DSS

V

GSS

T

T

STG

I

Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature

J

Storage Temperature Range
Diode Continuous Forward Current

S

=25°C Unless Otherwise Noted)

C

I

D

Pulsed Drain Current *

M

Parameter

P

R
R

E

Note：

I

θJC

θJA

Continuous Drain Current

D

Maximum Power Dissipation

D

Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy

AS

* Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=55V

Rating

TC=25°C

TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C

70
±25
175

-55 to 175
80

320**

80
65

178

90

0.84

62.5

L=0.3mH

650***

Unit

V

°C
°C

A

A

A

W

°C/W
°C/W

mJ

Electrical Characteristics (T

= 25°C Unless Otherwise Noted)

C

HY1707

Symbol Parameter Test Conditions

Min. Typ. Max.

Static Characteristics

BV

Drain-Source Breakdown Voltage

DSS

I

Zero Gate Voltage Drain Current

DSS

V

Gate Threshold Voltage

GS(th)

I

Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA

GSS

R

*

Drain-Source On-state Resistance VGS=10V, IDS= A - 6

DS(ON)

VGS=0V, IDS=250µA
VDS=

=0V - - 1

GS

V, V

70
TJ=85°C - -
VDS=VGS, IDS=250µA

40

70 - V

2 3 4 V

74

Diode Characteristics

*

Diode Forward Voltage ISD= A, VGS=0V - 0.8 V

V

SD

40

trr Reverse Recovery Time - 55 - ns

Qrr Reverse Recovery Charge

IDS=40A, dlSD/dt=100A/µs

- 100 - nC

10

7

1

Unit

µA

mΩ

2

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HY1707P/M/B/I/MF/PS/PM

Electrical Characteristics (Cont.)

Symbol

Dynamic Characteristics

R

C

C

C

t

d(ON)

t

d(OFF)

Gate Resistance

G

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-on Delay Time

T

Turn-on Rise Time

r

Turn-off Delay Time

T

Turn-off Fall Time

f

Gate Charge Characteristics

Q
Q
Q

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Parameter

Test Conditions

VGS=0V,VDS=0V,F=1MHz
VGS=0V,

VDS=25V,
Frequency=1.0MHz

VDD=35V, RG=3 Ω,

IDS=40A, VGS=10V,

VDS=55V, VGS=10V,
IDS=40A

(T

25°C Unless Otherwise Noted)

=

C

HY1707

Min. Typ. Max.

-

0.9

4550

­900

­280

-

-

-

-

-

-

-

-

21

10

25
31

88
20
21

Unit

-

-

-

­39
19
48

57

Ω

pF

ns

-

nC

-

-

Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.

3

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HY1707P/M/B/I/MF/PS/PM

Typical Operating Characteristics

Ptot - Power (W)

Power Dissipation

240

200

160

120

80

40

TC=25oC

0

0 20 40 60 80 100 120 140160 180 200

Tc- Temperature (°C)

Case

Safe Operation Area

400

100

Rds(on) Limit

10

1

ID - Drain Current (A)

100

80

60

40

ID - Drain Current (A)

20

TC=25oC,VG=10V

0 20 40 60 80 100 120140 160 180 200

Tc-Case

Drain Current

limited by package

Temperature(°C)

100us

1ms

10ms

DC

10

1

0.1

0.01

0.02

0.01

Single

0.05

Normalized Effective Transient

0.001

0.0001 0.001 0.01

TC=25oC

0.1

0.1 1 10 100

VDS - Drain - Source Voltage (V)

Thermal Transient Impedance

Duty = 0.5

0.2

0.1

0.1

SquareWavePulseDuration (sec)

4

Mounted on minimum pad
R

:62.5oC/W

θJA

1 10

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HY1707P/M/B/I/MF/PS/PM

Typical Operating Characteristics ( Cont.)

Output Characteristics

160

140

120

100

80

60

ID - Drain Current (A)

40

20

0

0 1 2 3 4 5

VDS - Drain-Source Voltage (V)

Drain-Source On Resistance

11

10

9

8

7

VGS= 7,8,9,10V

6V

5.5V

5V

4.5V
4V

IDS=40A

Drain-Source On Resistance

8.5

8.0

7.5

7.0

6.5

6.0

5.5

RDS(ON) - On - Resistance (mΩ)

5.0

4.5
0 20 40 60 80 100

VGS=10V

ID - Drain Current (A)

Gate Threshold Voltage

1.8

1.6

1.4

1.2

1.0

0.8

IDS =250µA

6

RDS(ON) - On - Resistance (mΩ)

5

4

4 5 6 7 8 9 10

VGS - Gate - Source Voltage (V)

0.6

0.4

Normalized Threshold Vlotage

0.2

0.0

-50 -25 0 25 50 75 100 125 150 175

Tj - Junction Temperature (°C)

5

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HY1707P/M/B/I/MF/PS/PM

Typical Operating Characteristics ( Cont.)

Drain-Source On Resistance

2.2
VGS = 10V

2.0

IDS = 40A

1.8

1.6

1.4

1.2

1.0

0.8

Normalized On Resistance

0.6

0.4

0.2

-50 -25 0 25 50 75 100 125 150 175

Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)

RON@Tj=25oC: 6mΩ

Capacitance Gate Charge

10000

9000
8000
7000
6000
5000
4000
3000

C - Capacitance (pF)

2000

1000

Crss

0

0 5 10 15 20 25 30 35 40

VDS - Drain - Source Voltage (V)

Frequency=1MHz

Ciss

Coss

Source-Drain Diode Forward

160

100

10

1

Tj=175oC

Tj=25oC

IS - Source Current (A)

0.1

0.0 0.3 0.6 0.9 1.2 1.5

10

VDS= 55V

9

IDS= 40A

8
7
6

VGS - Gate-source Voltage (V)

5
4
3
2
1
0

12 24 48

0

QG - Gate Charge (nC)

36

60 72 84 96

6

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HY1707P/M/B/I/MF/PS/PM

Avalanche Test Circuit and Waveforms

V

DS

L

DUT

I

R

G

tp

I

L

V

DD

0.01Ω

AS

V

t

p

DSX(SUS)

t

AV

V

DS

V

E

AS

DD

Switching Time Test Circuit and Waveforms

V

DS

R

D

DUT

V

GS

R

G

tp

V

DD

V

90%

10%

V

GS

DS

t

d(on) tr

t

d(off) tf

7

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HY1707P/M/B/I/MF/PS/PM

Package Information

TO-220FB-3L

SYMBOLMIN NOM MAXMIN NOM MAX

4.40 4.574.700.1730.1800.185

A

1.27 1.301.330.0500.0510.052

A1

2.35 2.402.500.0930.0940.098

A2

0.77 0.800.900.0300.0310.035

b

1.17 1.271.360.0460.0500.054

b2

0.48 0.500.560.0190.0200.022

c

15.4015.6015.800.6060.6140.622

D

9.00 9.109.200.3540.3580.362

D1

0.05 0.100.200.0020.0040.008

DEP

E 9.80 10.0010.200.3860.3940.402
E1 - 8.70 - - 0.343 ­E2 9.80 10.0010.200.3860.3940.402

e
e1

6.40 6.506.60 0.2520.2560.260

H1

12.7513.5013.650.5020.5310.537

L
L1
L2

3.50 3.603.63 0.1380.1420.143

P

3.50 3.603.63 0.1380.1420.143

P1

2.73 2.802.87 0.1070.1100.113

Q

θ1
θ2
θ3

5° 7° 9° 5° 7° 9°
1° 3° 5° 1° 3° 5°
1° 3° 5° 1° 3° 5°

2.54BSC 0.100BSC

5.08BSC 0.200BSC

- 3.103.30 - 0.1220.130

2.50REF 0.098REF

8

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HY1707P/M/B/I/MF/PS/PM

TO-220FB-3S

9

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HY1707P/M/B/I/MF/PS/PM

OL

TO-263-2L

SYMB

A 4.40 4.57 4.70 0.173 0.180 0.185
A1 1.22 1.27 1.32 0.048 0.050 0.052
A2 2.59 2.69 2.79 0.102 0.106 0.110
A3 0.00 0.10 0.20 0.000 0.004 0.008

b 0.77 0.813 0.90 0.030 0.032 0.035
b1 1.20 1.270 1.36 0.047 0.050 0.054

c 0.34 0.381 0.47 0.013 0.015 0.019
D1 8.60 8.70 8.80 0.339 0.343 0.346

E 10.00 10.16 10.26 0.394 0.400 0.404
E2 10.00 10.10 10.20 0.394 0.398 0.402

e 2.54BSC 0.100BSC

H 14.70 15.10 15.50 0.579 0.594 0.610
H2 1.17 1.27 1.40 0.046 0.050 0.055

L 2.00 2.30 2.60 0.079 0.091 0.102
L1 1.45 1.55 1.70 0.057 0.061 0.067
L2 2.50REF 0.098REF
L4 0.25BSC 0.010BSC

1 5° 7° 9° 5° 7° 9°

2 1° 3° 5° 1° 3° 5°
ΦP1 1.40 1.50 1.60 0.055 0.059 0.063
DEP 0.05 0.10 0.20 0.002 0.004 0.008

MM INCH

MIN NOM MAX MIN NOM MAX

0° 5° 8° 0° 5° 8°

10

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HY1707P/M/B/I/MF/PS/PM

OL

TO-262-3L

SYMB

MIN NOM MAX MIN NOM MAX

A 4.45 4.57 4.70 0.175 0.180 0.185
A1 1.22 1.27 1.32 0.048 0.050 0.052
A2 2.29 2.67 2.92 0.090 0.105 0.115

b 0.71 0.813 0.97 0.028 0.032 0.038

b2 1.22 1.270 1.40 0.048 0.050 0.055

c 0.38 0.381 0.76 0.015 0.015 0.030

D 23.20 23.61 24.02 0.913 0.930 0.946
D1 8.38 8.70 8.89 0.330 0.343 0.350
E1 10.03 10.16 10.54 0.395 0.400 0.415

e 2.54BSC 0.100BSC

H2 - - 1.31 - - 0.052

L 13.34 13.73 14.10 0.525 0.541 0.555
L1 3.30 3.56 4.06 0.130 0.140 0.160
L2 10.77REF 0.424REF
L3 3.40REF 0.134REF

P1 1.07 1.20 1.32 0.042 0.047 0.052

θ1 - 7° - - 7° ­θ2 - 3° - - 3° ­θ3 - - 12° - - 12°
θ4 - - 3° - - 3°

DEP 0.10 0.18 0.25 0.004 0.007 0.010

MM INCH

11

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HY1707P/M/B/I/MF/PS/PM

TO-220MF-3L

SYMBOL

E 9.86 10.16 10.46
E1 9.76 10.04 10.34
E2 9.26 9.46 9.66

A 4.50 4.70 4.90
A1 2.34 2.54 2.74
A2 0. 0.56 0.
A4 2.63 2.76 2.89
A5

c 0.45 0.50 0.60

D 15.47 15.87 16.27

Q
H1

e

L 12.58 12.98 13.38
L1 2.81 2.93 3.05
L2 7.55 7.80 8.05

θ1 3° 5° 7°
θ2 - 45° -

DEP 0.05 0.10 0.15

F1 1.00 1.50 2.00
F2 13.50 13.90 14.30
F3 3.15 3.30 3.45
F4 5.15 5.40 5.65

G 7.70 8.00 8.30
G1 6.70 7.00 7.30
G3 1.25 1.35 1.45
b1 1.23 1.28 1.38
b2 0.75 0.80 0.90
K1 0.65 0.70 0.75

R

MIN NOM MAX

30 60

P 3.06 3.18 3.40

P1 1.40 1.50 1.60
P2 0.95 1.00 1.05
P3 3.30 3.45 3.60

MM

1.00REF

9.40REF

6.70REF

2.54BSC

0.50REF

12

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HY1707P/M/B/I/MF/PS/PM

TO-3PS-3L

SYMBOLMIN NOM MAX

A
A1
A2

b
b2

c

D
D1
D2

DEP

E 9.88 10.0010.20

E1 7.80 8.008.20
E2 6.90 7.107.30
E3 9.90 10.0010.10

e
e1

L
L1

P
P1
P2
P3

Q
Q1
Q2

U

θ1
θ2
θ3

3.36 3.563.76

1.27 1.301.37

1.49 1.541.64

0.77 0.800.90

1.17 1.271.36

0.48 0.500.56

15.5015.7015.90

9.10 9.209.30

0.30REF

0.05 0.100.20

2.54BSC

5.08BSC

13.2513.4013.55

- 3.003.30

6.00REF

3.20REF

3.57REF

1.40 1.501.60

3.93 4.004.07

1.60 1.701.80

6.80 7.007.20

4.00 4.204.40
3° 5° 7°
5° 7° 9°
1° 3° 5°

13

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HY1707P/M/B/I/MF/PS/PM

TO-3PS-3M

SYMBOLMIN NOM MAX

A
A1
A2

b
b2

c

D
D1
D2

DEP

E 9.88 10.0010.20

E1 7.80 8.008.20
E2 6.90 7.107.30
E3 9.90 10.0010.10

e
e1

L
L1

P
P1
P2
P3

Q
Q1
Q2

U

θ1
θ2
θ3

3.36 3.563.76

1.27 1.301.37

1.49 1.541.64

0.77 0.800.90

1.17 1.271.36

0.48 0.500.56

15.5015.7015.90

9.10 9.209.30

0.30REF

0.05 0.100.20

2.54BSC

5.08BSC

7.25

- 3.003.30

1.40 1.501.60

3.93 4.004.07

1.60 1.701.80

6.80 7.007.20

4.00 4.204.40
3° 5° 7°
5° 7° 9°
1° 3° 5°

7.40 7.55

6.00REF

3.20REF

3.57REF

14

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HY1707P/M/B/I/MF/PS/PM

Devices Per Unit

Package Type

TO-220FB-3L

220FB-3S

TO-

263-2L

TO-

262-3L

TO-

220MF-3L

TO-

3PS-3L

TO-

3PS-3M

TO-

Classification Profile

Unit

Tube
Tube 50
Tube 50
Tube 50
Tube 50
Tube 50
Tube 50

Quantity

50

15

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HY1707P/M/B/I/MF/PS/PM

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak

Temperature min (T
Temperature max (T
Time (T

Average ramp-up rate
(T

smax

Liquidous temperature (TL)
Time at liquidous (tL)

Peak package body Temperature
(Tp)*

Time (tP)** within 5°C of the specified
classification temperature (Tc)

Average ramp-down rate (Tp to T
Time 25°C to peak temperature

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

Table 2. Pb-free Process – Classification Temperatures (Tc)

to T

smin

to TP)

1.6 mm – 2.5 mm

smax

Package

Thickness

<2.5 mm

≥2.5 mm 220 °C 220 °C

Package

Thickness

<1.6 mm

≥2.5 mm 250 °C 245 °C 245 °C

smin

smax

) (ts)

)

)

See Classification Temp in table 1 See Classification Temp in table 2

)

smax

Volume mm3

<350

260 °C 260 °C 260 °C
260 °C 250 °C 245 °C

100 °C
150 °C

60-120 seconds

3 °C/second max. 3°C/second max.

183 °C

60-150 seconds

20** seconds 30** seconds

6 °C/second max. 6 °C/second max.

6 minutes max. 8 minutes max.

Volume mm

<350

235 °C 220 °C

3

Volume mm3

350-2000

150 °C
200 °C

60-120 seconds

217 °C

60-150 seconds

Volume mm

≥350

Volume mm3

3

>2000

Reliability Test Program

Test item Method Description

SOLDERABILITY JESD-22, B102
HOLT JESD-22, A108
PCT JESD-22, A102
TCT JESD-22, A104

16

5 Sec, 245°C
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C

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