Holtek Semiconductor Inc HT8955A Datasheet

Features

Operating voltage: 5.0V
Long delay time
0.8 seconds (SEL=VSS, 256K DRAM)
0.2 seconds (SEL=VDD/open, 64K DRAM)
25kHz sampling rate
Continuous variable delay time

Applications

Mixers
Karaoke systems

General Description

The HT8955A is a CMOS LSI digital audio signal delay processor. It is designed for audio system applications including echo generators, karaoke systems, sound effect generators, etc.
The chip consists of a built-in pre-amplifier, on-chip oscillato r, DRAM interface, 10-bit A/D and D/A converters as well as control logic. It provides continuously adjustable delay time up to 0.8/0.2 seconds at a s ampling rate of 25kHz
HT8955A
Voice Echo
Built-in pre-amplifier
Low distortion
High S/N ratio
Wide frequency response
PCM 10-bit A/D and D/A converters
24-pin DIP package
Echo generators
Sound effect generators
when combined with an external DRAM (41256/4164). The HT8955A is superior to a conventional BBD delay un it in its low distor­tion, high S/N ratio and long delay time. Its sophisticated lo w pa ss filter wil l not e nd in the normal application s due to the high sampling rate (25~50kHz). Hence, the HT8955A is excel­lent for audio delay sys tem applications. It is offered in a 24-pin dual-in-line package.

Pin Assignment Block Diagram

1 5th May ’98
HT8955A

Pad Coordinates Unit: µm

Pad
No.
1 –1138.00 796.50 14 1141.50 –547.00 2 –1141.00 523.50 15 1141.50 –197.50 3 –1136.50 201.50 16 1141.50 111.50 4 –1136.50 –163.00 17 1141.50 461.00 5 –1137.00 –507.00 18 1141.50 770.50 6 –1149.00 –774.00 19 896.00 811.00 7 –854.50 –853.50 20 645.00 810.50 8 –548.00 –831.50 21 435.00 794.00
9 –198.50 –831.50 21 335.00 794.00 10 111.50 –831.50 22 150.00 779.00 11 461.00 –831.50 23 –35.00 779.00 12 773.00 –831.50 25 –264.00 806.00 13 1122.50 –831.50
Chip size: 2170 * The IC substrate should be connected to VSS in the PCB layout artwork.
× 2200 (µm)
2
XY
Pad

Pin Description

Pin No. Pin Name I/O
1 BIAS O OP Non-inverted 2 IN I OP Inverted Audio signal input pin (inverted)
3 PREO O OP OUTPUT Pre-amplifier output pin 4 OUT O Delayed audio signal output pin
5 SEL I Pull-High
6 OSC1 I System oscillator input 7 OSC2 O System oscillator output 8 OSC3 I Delay time control oscillator input 9 OSC4 O Delay time control oscillator output 10 VSS I Negative power supply (GND) 11 A6 O CMOS OUT Connects to DRAM A6 12 A7 O CMOS OUT Connects to DRAM A7
Internal
Connection
Description
Internal pre-amplifier bias Connects to a decoupling capacitor
DRAM type selection: VDD or Open: 64Kb VSS: 256Kb
No.
XY
2 5th May ’98
HT8955A
Pin No. Pin Name I/O
Internal
Connection
Description
13 A5 O CMOS OUT Connects to DRAM A5 14 A4 O CMOS OUT Connects to DRAM A4 15 A3 O CMOS OUT Connects to DRAM A3 16 A2 O CMOS OUT Connects to DRAM A2 17 A1 O CMOS OUT Connects to DRAM A1 18 A0 O CMOS OUT Connects to DRAM A0 19 RASB O CMOS OUT Connects to DRAM RASB 20 WRB O CMOS OUT Connects to DRAM WRB 21 DATA I/O CMOS I/O Data I/O pin 22 A8 O CMOS I/O Connects to DRAM A8 23 CASB O CMOS I/O Connects to DRAM CASB 24 VDD I Positive power supply

Absolu te Maximum Ra tin g s*

Supply Voltage.................................–0.3V to 6V Storage T emperature.................–50°C to 125°C
Input Voltage................. V
–0.3V to VDD+0.3V Operating Temperature...............–20°C to 70°C
SS
*Note: These are stress ra tings on ly. Stresses exceeding the range spe cified un der “Abso lute Maxi-
mum Ratings” ma y cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme condition s may affect device reliability.

Electrical Characteristics (Ta=25°C)

Symbol Parameter
V
DD
I
OP
A
V
A
V
V
IL
Operating Voltage 4.5 5.0 5.5 V Operating Current 5V
Pre-amplifier Voltage Gain 5V
Comparator Voltage Gain 5V “L” Input Voltage 0 0.3V
Test Conditions
V
DD
Conditions
No load, f
=640kHz
OSC
>100k
R
L
Open loop
>100k
R
L
Open loop
3 5th May ’98
Min. Typ. Max. Unit
—2.58mA
—2000—V/V
—2000—V/V
V
DD
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