Pad Description
Pad No. Pad Name I/O
Internal
Connection
Description
2 VDD I — Positive power supply
3AUD O
PMOS
Open Drain
Voice/tone output driving an external transistor
4 OSC2 O — Oscillator output pin
5 OSC1 I — Oscillator input pin
6
FLAG1 O
NMOS
Open Drain
3Hz flash/busy output/6Hz (by code o ption), active
low
7 VSS I — Negative power supply (GND)
8 FLAG2 O
NMOS
Open Drain
3Hz flash/busy output/ENDP/sound level display
(by mask option), active low
9~15, 1 KEY1~KEY8 I Pull-High
Trigger key, active low. KEY1 can be optioned as a
direct or sequential/random key, the 7 keys as
direct keys only or by mask option as 4
×4 matrix
key
Absolu te Maxim um Ratings *
Supply Voltage.................................–0.3V to 6V Storage Temperature.................–50°C to 125°C
Input Voltage................. V
SS
–0.3V to VDD+0.3V Operating Temperature...............–20°C to 70°C
*Note: These are stress ra tings on ly. Stresses exceeding the range specifie d under “Ab solute Maxi -
mum Ratings” ma y cause substantial damage to the device. Functional operation of this
device at other conditions beyond those listed in the specification is not implied and prolonged
exposure to extreme conditions may affect device reliability.
Electrical Characteristics (Ta=25°C)
Symbol Parameter
Test Conditions
Min. Typ. Max. Unit
V
DD
Conditions
V
DD
Operating Voltage — — 2.4 — 5.0 V
I
OP
Operating Current 3V
No load,
f
OSC
=96kHz
—200400
µA
I
STB
Standby Current 3V — — 1 3 µA
I
O
Max. AUD Output Current 3V VOH=0.6V –1.5 –2 — mA
I
OL
FLAG Sink Current 3V VOL=0.3V 2 3 — mA
V
IH
“H” Input Voltage — — 0.8V
DD
—VDDV
V
IL
“L” Input Voltage — — 0 — 0.2V
DD
V
f
OSC
Oscillating Frequency 3V — — 96 — kHz
HT812L0
3 5th May ’98