General Purpose PIR Controller
Features
•
Stand-by current: 100µA (Typ.)
•
On-chip regulator
•
Adjustable output duration
•
CDS input
•
40 second warm-up
•
ON/AUTO/OFF selectable by MODE pin
Applic ations
•
PIR light controllers
•
Motion detectors
General Description
The HT761X is a CMOS LSI chip designed for
use in automatic PIR lamp control. It can operate with a 2-wire configuration for tr iac applications or with a 3-wire configuration for relay
applications. The chip is equipped with operational amplifiers, a comparator, timer, a zero
crossing detector, control circ uit, a voltage r egulator, a system oscillator, and an output timing
oscillator.
Its PIR sensor detects infrared power variations induced by the motion of a huma n body
and transforms it to a volta ge variation. If the
HT761X
•
Override function
•
Auto-reset if the ZC signal disappears over
3 seconds
•
Operating voltage: 5V~12V
•
16 pin DIP or SOP packaging
•
Alarm systems
•
Auto door bells
PIR output voltage variation conforms to the
criteria (refer to the functional description), the
lamp is turned on with an adjustable duration.
The HT761X offers three operating modes (ON,
AUTO, OFF) which can be set through the
MODE pin. While the chip is working in the
AUTO mode the user can ov erride it and s witch
to the TEST mode, or manual ON mode, or
return to the AUTO mode by switching the
power switch. The chip is enclosed in a 16 pin
DIP/SOP.
Selection Table
Part Number
HT7610 2 times Flash 8 hrs
HT7611 1 time No flash 8 hrs
ZC off/on for
override
Flash on
mode auto-
change
1 24th Mar ’97
Override ON
duration
Comparator
window
1
(VDD-VEE)
16
1
(VDD-VEE)
16
Effective
trigger width
>24ms
>24ms
Pin Description
HT761X
Pin No.
Pin Name I/O
AB
1 1 VSS I — Negative power supply
2 RELAY O CMOS
2 TRIAC O CMOS
3 3 OSCD I/O
4 4 OSCS I/O
5 5 ZC I CMOS Input for AC zero crossing detection
6 6 CDS I CMOS
7 7 MODE I CMOS
8 8 VDD I — Positive power supply
9 9 VEE O NMOS
10 10 RSTB I Pu ll-High Chip reset input, active low
11 11 OP1P I PMOS Noninverting input of OP1
12 12 OP1N I PMOS Inverting input of OP1
13 13 OP1O O NMOS Output of OP1
14 14 OP2P I PMOS Noninverting input of OP2
15 15 OP2N I PMOS Inverting input of OP2
16 16 OP2O O NMOS Output of OP2
Internal
Connection
PMOS IN
NMOS OUT
PMOS IN
NMOS OUT
Description
RELAY drive output through an external NPN
transistor, active high
TRIAC drive output
The output is a pulse output when active.
Output timing oscillator I/O
It is connected to an externa l RC to adjust outpu t
duration.
System oscillator I/O
OSCS is connected to an external RC to set the
system frequency. The system frequency
for normal application.
CDS is connected to a CDS voltage divider for
daytime/night auto-detection. Low input to this pin
can disable the PIR input. CDS a schmitt trigger
input with 5-second input debounce time.
Operating mode selection input:
VDD: Output is always ON
VSS: Output is always OFF
Open: Auto detection
Regulated voltage o utput
The output voltage is about –4V with respect to
VDD.
≅ 16KHz
3 24th Mar ’97
HT761X
Absolu te Maximum Ra tin g s
Supply Voltage...............................–0.3V to 13V Operating Temperature...............–25°C to 75°C
Input Voltage................. V
Storage Temperature.................–50
Electrical Characteristics
–0.3V to VDD+0.3V Zero Crossing Current.....................max. 300µA
SS
°C to 125°C
Symbol Parameter
V
V
I
DD
V
V
I
OH1
I
OL1
I
OL2
V
V
V
V
F
F
A
V
Operating Voltage — — 5 9 12 V
DD
Regulator Output Voltage 12V VDD–V
EE
Operating Current 12V No load, OSC on — 100 350 µA
CDS “H” Transfer Voltage 12V — 6.4 8 9.6 V
TH1
CDS “L” Transfer Voltage 12V — 3.7 4.7 5.6 V
TL1
OUTPUT Source Current
(RELAY, TRIAC)
OUTPUT Sink Current
(RELAY, TRIAC)
VEE Sink Current 12V VDD–VEE=4V — 1 — mA
“H” Input Voltage — — 0.8V
IH
“L” Input Voltage — — — — 0.2V
IL
ZC “H” Transfer Voltage 12V — 4.7 6.7 8.7 V
TH2
ZC “L” Transfer Voltage 12V — 1.3 1.8 2.3 V
TL2
System Oscillator Frequency 12V
SYS
Delay Oscillator Frequency 12V
d
OP Amp Open Loop Gain 12V No load 60 80 — dB
VO
OP Amp Input Offset Voltage 12V No load — 10 35 mV
OS
Test Condition
V
DD
12V V
12V V
Condition
=10.8V –6 –12 — mA
OH
=1.2V 40 80 — mA
OL
R
OSCS
C
OSCS
R
OSCD
C
OSCD
EE
=560K
=100P
=560K
=100P
Min. Typ. Max. Unit
3.5 4 4.5 V
——V
DD
V
DD
12.8 16 19.2 KHz
12.8 16 19.2 KHz
4 24th Mar ’97