Holtek Semiconductor Inc HT27C512 Datasheet

OTP CMOS 64K×8-Bit EPROM

Features

•

Operating voltage: +5.0V

•

Programming voltage

–

VPP=12.2V±0.2V

–

VCC=5.8V±0.2V

•

High-reliability CMOS technology

•

Latch-up immunity to 100mA from -1.0V to
V

+1.0V

CC

•

CMOS and TTL compatible I/O

•

Low power consumption

–

Active: 30mA max.

–

Standby: 1µA typ.

General Description

The HT27C512 chip family is a low-power,
512K bit, +5V electrically one-time programma­ble (OTP) read-only memories (EPROM). Or­ganized into 64K words with 8 bits per word, it
features a fast single address location program­ming, typically at 75

µs per byte. Any byte can

HT27C512

•

64K×8-bit organization

•

Fast read access time: 70ns, 90ns and 120ns

•

Fast programming algorithm

•

Programming time 75µs typ.

•

Two line contro l ( OE & CE)

•

Standard product identification code

•

Package type

–

28-pin DIP/SOP

–

32-pin PLCC

•

Commercial temperature range
(0

°C to +70°C)

be accessed in less than 70ns/90ns with respect
to Spec. This eliminates the need for WAIT
states in high-performance microprocessor sys­tems. The HT27C512 has separate Output En­able (

OE) and Chip E nable (CE) controls which

eliminate bus contention issues.

Block Diagram

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Pin Assignment

Pin Description

Pin Name I/O/C/P Description

A0~A15 I Address input s
DQ0~DQ7 I/O Data inputs/outputs
CE C Chip enable
OE/VPP C/P Output enable/program voltage supply
NC — No connection
VCC I Positve power supply
VSS I Negative power supply

HT27C512

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HT27C512

Absolu te Maximum Ra tin g s

Operation Temperature Commercial ...................................................................................0°C to +70°C

Storage Temperature.................................... .... .... .... .... .... .... .... .... .... .... .... .... .... .... .... .... .... .–65

Applied VCC Voltage with Respect to VSS........................... .. .. .................... .. .. ................. –0.6V to 7.0V

Applied Voltage on Input Pin with Respect to VSS................................ .... .... .... .... .... .... ... –0.6V to 7.0V

Applied V oltage on Output Pin with Respect to VSS................................... .. .... .. .. .. –0.6V to V

Applied Voltage on A9 Pin with Respect to VSS....................................................... ...... . –0.6V to 13.5V

Applied VPP Voltage with Respect to VSS ....................................................... .... .... .... ....–0.6V to 13.5V

Applied READ V o ltage (Functionality is guaranteed between these limits) ....... .. .. .. .. .+4.5V to +5.5V

Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute M axi-

mum Ratings” may cause substantial damage to the device. Functional operation of this device
at other conditions beyond those listed in the specification is not implied and prolonged
exposure to extreme condition s may affect device reliability.

D.C. Characteristics

Read operation

Symbol Parameter

V
V
V
V
I

LI

I

LO

I

CC

I

SB1

I

SB2

I

PP

Output High Level 5V IOH=–0.4mA 2.4 — — V

OH

Output Low Level 5V IOL=2.1mA — — 0.45 V

OL

Input High Level 5V — 2.0 — VCC+0.5 V

IH

Input Low Level 5V — –0.3 — 0.8 V

IL

Input Leakage Current 5V VIN=0 to 5.5V –5 — 5 µA
Output Leakage Current 5V V

VCC Active Current 5V
Standby Current (CMOS) 5V CE=V

Standby Current (TTL) 5V CE=V
VPP Read/Standby Current 5V CE=OE=VIL, VPP=V

Test Conditions

V

CC

OUT

CE=VIL, f=5MHz,
I

OUT

Conditions

Min. Typ. Max. Unit

=0 to 5.5V –10 — 10 µA

=0mA

±0.3V — 1.0 10 µA

CC
IH

—— 30 mA

— — 1.0 mA
—— 100 µA

CC

°C to 125°C

+0.5V

CC

3 6th May ’99