Holtek Semiconductor Inc HT1613, HT1613C Datasheet

HT1613C

Timer with Dialer Interface

Block Diagram

Rev. 1.10 1 August 17, 2001

Features

·

Operating voltage: 1.2V~1.7V

·

Low operating current: 3mA (typ.)

·

Dialing number and conversation time display

·

Conversation timer (59 mins and 59 secs max.)

·

8 or 10-digit LCD display driver; 3V, 1/2 bias, 1/3 duty (8
digit hand-held calculator LCD used for 8-digit applica

-

tion)

·

Real time clock with stopwatch

·

Built-in dialer interface

·

12-hour or 24-hour format

·

Uses 32768Hz crystal

·

Two-button sequential operation for real time clock
setting

·

Pad options

-

Real time (RT)

-

Auto change to timer mode (ACT)

-

Extension phone number display (EPN)

·

Blinking cursor waits for dialing number

·

Last call time display

General Description

The HT1613C is a CMOS chip designed for dialer inter

­faces driving 8 or 10 digit LCDs. Various functions, such
as real time clock, dialing number and conversation time
display are provided.

The HT1613C can display the real time or be blank by
default. When answering a telephone call, the timer is
activated to tell users how long the conversation has

taken. The HT1613C receives dialing data from the di

­aler anddisplays the phone number on the LCD fromleft
to right each time a phone call is made. By adding a
TIMER key, the HT1613C can provide the stopwatch
and timer reset/hold functions. Refer to the functional
description for details.

Applications

·

Timers, clocks and watches

·

LCD display drivers

·

Telephone display interface

·

Instrument display

Patent Number: 84545 (R.O.C.)
Patent Pending: 08/214, 079 (U.S.A.)

T1

EPN

SK

SEG1

SEG30

TIM ER

S1

HK

Tim e
Base

Tim er

Shift

R egister

State

C ontrol

C ontrol

Circuit

Comm on

Circuit

D ecoder

&

MUX

Voltage
D oubler

Segm ent

Latch

&

Select

Scan
CKT

X1
X2

S2

IN T

COM 1

COM 2

COM 3

VA

VB

VC

RT

ACT

RES

12/24

DI

T2

Pad Assignment

Chip size: 128 ´ 141 (mil)

2

* The IC substrate should be connected to VDD in the PCB layout artwork.

Pad Coordinates Unit: mil

Pad No. X Y Pad No. X Y Pad No. X Y

1

-57.91

45.52 19

-10.25 -61.96

37 58.10 28.84

2

-57.91

38.59 20 2.76

-61.96

38 58.10 36.19

3

-57.91

31.67 21 11.94

-62.50

39 58.10 43.53

4

-57.91

24.79 22 32.97

-62.50

40 58.10 50.87

5

-57.37

16.98 23 39.86

-62.50

41 58.10 58.22

6

-57.37

2.91 24 46.74

-62.50

42 37.26 63.04

7

-57.91 -8.60

25 58.10

-62.46

43 29.91 63.04

8

-57.91 -15.53

26 58.10

-55.04

44 22.57 63.04

9

-57.91 -22.49

27 58.10

-48.16

45 15.23 63.04

10

-57.91 -29.38

28 58.10

-36.30

46 7.88 63.04

11

-57.91 -36.26

29 58.10

-28.95

47 0.54 63.04

12

-57.91 -45.82

30 58.10

-21.61

48

-6.81

63.04

13

-57.91 -54.20

31 58.10

-15.22

49

-14.15

63.04

14

-57.91 -62.50

32 58.10

-7.88

50

-21.50

63.04

15

-47.20 -62.50

33 58.10

-0.54

51

-28.84

63.04

16

-33.43 -62.50

34 58.10 6.81 52

-36.18

63.04

17

-22.80 -62.46

35 58.10 14.15 53

-43.53

63.04

18

-16.37 -62.50

36 58.10 21.50 54

-50.87

63.04

HT1613C

Rev. 1.10 2 August 17, 2001

ACT

1

28

2

29

3

30

4

31

5

32

6

33

7

34

8

35

9

36

10

37

11

38

12

39

13

40

14

41

15

42

164317

44

18

45

19

46

20

47

21

48

224923

50

24

51

25

52

26

53

27

54

(0 ,0 )

SEG 15

SEG 16

SEG 17

SEG 18

SEG 19

SEG 20

SEG 21

SEG 22

SEG 23

SEG 24

SEG 25

SEG 26

SEG 27

RT

SEG14

SEG13

SEG12

SEG11

SEG10

SEG9

SEG8

SEG7

SEG6

SEG5

SEG4

SEG3

SEG2

SEG1

COM 3

COM 1

12/24

SEG28

SEG29

SEG30

COM 2

S2

X2

X1

TIM ER

S1

HK

IN T

T1

T2

SK

VSS

VA

VBVCVDD

DI

RES

EPN

Pad Description

Pad Name I/O

Internal

Connection

Description

SEG1~SEG30 O CMOS OUT LCD segment signal output pads

COM1~COM3 O CMOS OUT LCD common signal output pads

HK

I

CMOS IN

Pull-high

Hook switch detector input
Active low

X1 I

OSCILLATOR

32768Hz crystal oscillator input

X2 O 32768Hz crystal oscillator output

T1

I

CMOS IN

Pull-high

Test pad (connected to VSS for production test)

T2

I

CMOS IN

Pull-high

Test pad (connected to VSS for production test)

INT

O NMOS OUT Interrupt output, 8Hz or 16Hz by mask option

TIMER I

CMOS IN

Pull-low

Timer reset and start/hold toggle control input pad

12/24

I

CMOS IN

Pull-low

12-hour or 24-hour format option pad, connected to VDD for 12-hour format

S1 I

CMOS IN

Pull-low

Clock setting switch
Active high

S2 I

CMOS IN

Pull-low

Clock adjusting switch
Active high

DI

I

CMOS IN

Pull-high

Serial data input pad (connected to the dialer)
Data should be valid at the falling edge of SK

SK

I

CMOS IN

Pull-high

Clock input pad (connected to the dialer)

RES

I

CMOS IN

Pull-high

System initialization pin (active low)
The pull-high resistance is 200kW typ.

RT I

CMOS

LATCH IN

Pull-low

Real time selection pin
VDD: With real time mode
Floating: Without real time mode

EPN

I

CMOS

LATCH IN

Pull-high

Extension phone number display selection pin
VSS: Without extension phone number display

Floating: With extension phone number display

ACT

I

CMOS

LATCH IN

Pull-high

In the dialing number display mode, auto change to timer mode selection
VSS: Auto change to timer mode
Floating: Manual change to timer mode

VA O CMOS OUT Voltage doubler, connected to external capacitor

VB O CMOS OUT Voltage doubler, connected to external capacitor

VC O CMOS OUT Voltage doubler, connected to external capacitor

VDD

¾¾

Positive power supply

VSS

¾¾

Negative power supply, ground

HT1613C

Rev. 1.10 3 August 17, 2001

Approximate internal connection circuits

Absolute Maximum Ratings

Supply Voltage ............................................-0.3V to 5V

Storage Temperature ............................-50°Cto125°C

Input Voltage..............................V

SS

-0.3V to VDD+0.3V

Operating Temperature...........................-20°Cto75°C

Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may

cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil­ity.

Electrical Characteristics

f

OSC

=32768Hz, Ta=25°C

Symbol Parameter

Test Conditions

Min. Typ. Max. Unit

V

DD

Conditions

V

DD

Operating Voltage

¾¾

1.2 1.5 1.7 V

V

IL

Input Low Voltage 1.2V~1.7V

¾

V

SS

¾

0.2V

DD

V

V

IH

Input High Voltage 1.2V~1.7V

¾

0.8V

DD

¾

V

DD

V

I

STB

Standby Current 1.5V

V

HK

=Floating (or VDD)

¾

0.1 1

mA

I

DD

Operating Current 1.5V No load

¾

310

mA

I

OL

Output Sink Current of INT 1.5V

V

O

=0.3V

500 1000

¾mA

t

A

Data Setup Time 1.5V

¾

1

¾¾ms

t

B

Data Hold on Time 1.5V

¾

2

¾¾ms

t

C

Inter Digit Time

1.5V

¾

5

¾¾ms

t

DB

Debounce Time
(HK

, S1, S2, TIMER)

1.5V

¾¾

31.25

¾

ms

R

HI1

Pull-high Resistance
(HK

,DI,SK)

1.5V

V

IN

=0V

¾

1

¾ MW

R

HI2

Pull-high Resistance (RES)

1.5V

V

IN

=0V

100 200 400

kW

R

LO

Pull-low Resistance
(TIMER, S1, S2, 12/24

)

1.5V

V

IN

=1.5V

¾

5

¾ MW

f

OSC

System Frequency 1.5V Crystal=32768Hz

¾

32768

¾

Hz

HT1613C

Rev. 1.10 4 August 17, 2001

CMOS LATCH IN

Pull-high

CMOS LATCH IN

Pull-low

PW R ON

15k

W

NMOS OUT

CMOS IN

Pull-low

CMOS IN

Pull-high

OSCILLATOR

CMOS OUT

X1

12pF

15pF

10M

W

V

DD

PW R ON

15k

W

X2

V

DD