hittite HMC326MS8G User Manual

查询HMC326MS8供应商

MICROWAVE CORPORATION

Typical Applications

8

The HMC326MS8G is ideal for:

• Microwave Radios

• Broadband Radio Systems

• Wireless Local Loop Driver Amplifi er

Functional Diagram

AMPLIFIERS - SMT

v04.1203

HMC326MS8G

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Features

Psat Output Power: +26 dBm

> 40% PAE

Output IP3: +36 dBm

High Gain: 21 dB

Vs: +5.0V

Ultra Small Package: MSOP8G

General Description

The HMC326MS8G is a high effi ciency GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC driver
amplifi er which operates between 3.0 and 4.5 GHz.
The amplifi er is packaged in a low cost, surface mount
8 leaded package with an exposed base for improved
RF and thermal performance. The amplifi er provides
21 dB of gain and +26 dBm of saturated power from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when the
amplifi er is not in use. Internal circuit matching was
optimized to provide greater than 40% PAE.

8 - 98

Electrical Specifi cations, T

Parameter Min. Typ. Max. Units

Frequency Range 3.0 - 4.5 GHz

Gain 18 21 dB

Gain Variation Over Temperature 0.025 0.035 dB / °C

Input Return Loss 12 dB

Output Return Loss 7dB

Output Power for 1dB Compression (P1dB) 21 23.5 dBm

Saturated Output Power (Psat) 26 dBm

Output Third Order Intercept (IP3) 32 36 dBm

Noise Figure 5dB

Supply Current (Icc) Vpd = 0V / 5V 0.001 / 130 mA

Control Current (Ipd) 7mA

Switching Speed tOn/tOff 10 ns

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

= +25° C, Vs = 5V, Vpd = 5V

A

Order Online at www.hittite.com

MICROWAVE CORPORATION

v04.1203

HMC326MS8G

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Broadband Gain & Return Loss Gain vs. Temperature

25

20

15

10

5

0

-5

RESPONSE (dB)

-10

-15

-20
2 2.5 3 3.5 4 4.5 5 5.5 6

FREQUENCY (GHz)

S21
S11
S22

P1dB vs. Temperature Psat vs. Temperature

30

+25C

28

+85C

-40C

24

22

20

GAIN (dB)

18

16

3 3.25 3.5 3.75 4 4.25 4.5

FREQUENCY (GHz)

30

28

+25C
+85C

-40C

8

AMPLIFIERS - SMT

26

24

OUTPUT P1dB (dBm)

22

20

3 3.25 3.5 3.75 4 4.25 4.5

FREQUENCY (GHz)

Output IP3 vs. Temperature

40

38

36

34

OIP3 (dBm)

32

30

3 3.25 3.5 3.75 4 4.25 4.5

FREQUENCY (GHz)

+25C
+85C

-40C

26

24

Psat (dBm)

22

20

3 3.25 3.5 3.75 4 4.25 4.5

FREQUENCY (GHz)

Power Compression @ 3.5 GHz

45

40

35

30

25

20

15

10

Pout (dBm), Gain (dB), PAE (%)

5

0

-8-6-4-2024681012

INPUT POWER (dBm)

Output Power (dBm)
Gain (dB)

PAE (%)

+25C
+85C

-40C

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 99