Hittite HMC326MS8G Datasheet
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz
HMC326MS8G
FEBRUARY 2001
Features
Psat Output Power: +26 dBm
> 40% PAE
1
Output IP3 : +36 dBm
High Gain: 21 dB
Vs: +5.0V
Ultra Small Package: MSOP8G
AMPLIFIERS
SMT
V00.1200
General Description
The HMC326MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC driver amplifier which operates between
3.0 and 4.5 GHz. The amplifier is packaged in a
low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. The amplifier provides 21 dB of
gain and +26 dBm of saturated power from a
+5.0V supply voltage. Power down capability is
available to preserve current consumption when
the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40%
PAE. This amplifier is ideal for usage as a driver
amplifier for wireless local loop applications in
the 3.3 - 3.6 GHz frequency range.
Guaranteed Performance,
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C°52@niaG 811242Bd
erutarepmeTrevonoitairaVniaG 520.0530.0/BdC°
ssoLnruteRtupnI 821Bd
ssoLnruteRtuptuO 57 Bd
)Bd1P(noisserpmoCBd1rofrewoPtuptuO 125.32mBd
)tasP(rewoPtuptuOdetarutaS 3262mBd
)3PI(tpecretnIredrOdrihTtuptuO 2363mBd
erugiFesioN 5Bd
* See application circuit on pg. 1-167.
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
Vs = +5V*, 50 ohm System, -40 to +85 deg C
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nO/ffO)ccI(tnerruCylppuS 021/100.0Am
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nO/ffO)dpI(tnerruClortnoC 7/100.0Am
1 - 162
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz
HMC326MS8G
V00.1200
Broadband Gain & Return Loss
25
20
15
10
5
0
-5
RESPONSE (dB)
-10
-15
-20
22.533.544.555.56
FREQUENCY (GHz)
S21
S11
S22
P1dB vs. Temperature
30
28
26
24
22
20
18
16
OUTPUT P1dB (dBm)
14
12
10
3 3.25 3.5 3.75 4 4.25 4.5
FREQUENCY (GHz)
+25C
+85C
-40C
FEBRUARY 2001
Gain vs. Temperature, Vcc= +4.5
24
22
20
GAIN (dB)
18
16
3 3.25 3.5 3.75 4 4.25 4.5
FREQUENCY (GHz)
+25C
+85C
-40C
Psat vs. Temperature
30
28
26
24
Psat (dBm)
22
20
3 3.25 3.5 3.75 4 4.25 4.5
FREQUENCY (GHz)
+25C
+85C
-40C
1
AMPLIFIERS
SMT
Output Power vs.
Output IP3 vs. Temperature
40
+25C
38
36
34
OIP3(dBm)
32
30
3 3.25 3.5 3.75 4 4.25 4.5
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
+85C
-40C
Input Power@ 3.5 GHz
45
40
35
30
25
20
15
10
Pout (dBm), Gain (dB), PAE (%)
5
0
-8 -6 -4 -2 0 2 4 6 8 10 12
INPUT POWER (dBm)
Output Power (dBm)
Gain (dB)
PAE (%)
1 - 163
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz
HMC326MS8G
FEBRUARY 2001
Input Return Loss vs. Temperature
1
INPUT RETURN LOSS (dB)
AMPLIFIERS
SMT
Reverse Isolation vs. Temperature
REVERSE ISOLATION (dB)
0
+25C
+25C
+85C
-40C
+85C
-40C
-5
-10
-15
-20
3 3.25 3.5 3.75 4 4.25 4.5
FREQUENCY (GHz)
0
-10
-20
-30
-40
-50
-60
3 3.25 3.5 3.75 4 4.25 4.5
FREQUENCY (GHz)
V00.1200
Output Return Loss vs. Temperature
0
-3
-6
-9
-12
OUTPUT RETURN LOSS (dB)
-15
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
9
8
7
6
5
4
3
NOISE FIGURE (dB)
2
1
0
3 3.25 3.5 3.75 4 4.25 4.5
FREQUENCY (GHz)
+25C
+85C
-40C
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 164
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