Hittite HMC323 Datasheet
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER DC - 3.0 GHz
HMC323
FEBRUARY 2001
Features
P1dB Output Power: + 16 dBm
1
Output IP3: +31 dBm
Single Supply: 8.75V
Ultra Small SOT26 Package
AMPLIFIERS
SMT
V00.1100
General Description
The HMC323 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC amplifier that
operates from a single Vcc supply. The surface
mount SOT26 amplifier can be used as a broadband gain stage or used with external matching
for optimized narrow band applications. The
HMC323 offers 13 dB of gain and +19 dBm of
saturated power while only requiring 57 mA from
a 8.75V supply. Using a Darlington feedback
pair results in reduced sensitivity to normal
process variations and provides a good 50-ohm
input/output port match. This amplifier is ideal for
RF systems where high linearity is required
such as 2.2 - 2.7 GHz MMDS.
Guaranteed Perf ormance,
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ssoLnruteRtuptuO 69 Bd
noitalosIesreveR 6102Bd
zHG1@)tasP(rewoPtuptuOdetarutaS 6191mBd
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
-40 to +60 deg C
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1 - 150
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER DC - 3.0 GHz
HMC323
V00.1100
Gain & Return Loss
20
15
10
5
0
-5
-10
RESPONSE (dB)
-15
-20
-25
0123456
S11
S21
S22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C
-5
-10
+85C
-40 C
FEBRUARY 2001
Gain vs. Temperature
20
18
16
14
12
10
GAIN (dB)
8
6
4
2
0
00.511.522.533.54
+25C
+85C
-40C
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
+25C
-5
-10
+85C
-40C
1
AMPLIFIERS
SMT
-15
INPUT R ETUR N L OSS (dB )
-20
00.511.522.533.54
FREQUENCY (GHz)
-15
OUTPUT RETURN LOSS (dB)
-20
00.511.522.533.54
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-5
-10
-15
-20
REVERSE ISOLATION (dB)
-25
-30
00.511.522.533.54
FREQUENCY (GHz)
+25C
+85C
-40 C
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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