MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz
HMC314
FEBRUARY 2001
Features
P1dB Output Power: + 18 dBm
1
Output IP3: +29 dBm
Single Supply: 5V
Ultra Small SOT26 Package
AMPLIFIERS
SMT
V00.1100
General Description
The HMC314 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC amplifier that
operates from a single positive supply. This
amplifier also incorporates a power down feature. When the “Vpd” pin is held low, the amplifier
will shut down. The surface mount SOT26 amplifier can be used as a broadband gain stage for
wideband applications. The amplifier provides
12 dB of gain and +22 dBm of saturated power
while operating from a single positive +5v supply. The HMC314 is optimized in gain and return
loss for the MMDS (2.2-2.7 GHz) and Wireless
Local Loop Applications (3.5 GHz) bands. At a
height of 1.45mm, the SOT26 is ideal for low
profile portable wireless devices and WLAN
systems.
Guaranteed Performance,
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
-40 to +85 Deg C
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1 - 126
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz
HMC314
V00.1100
Gain & Return Loss
20
15
10
5
0
-5
-10
RESPONSE (dB)
-15
-20
-25
01234567
FREQUENCY (GHz)
S11
S21
S22
Gain vs. Temperature
20
15
10
GAIN (dB)
5
0
0.511.522.533.544.55
FREQUENCY (GHz)
FEBRUARY 2001
+25C
+85C
-40C
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
0
-5
-10
-15
RETURN LOSS (dB)
-20
+25C
+85C
-40C
0
-4
-8
-12
RETURN LOSS (dB)
-16
+25C
+85C
-40C
1
AMPLIFIERS
SMT
-25
0.511.522.533.544.55
FREQUENCY (GHz)
-20
0.511.522.533.544.55
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
-20
-30
ISOL A T IO N (dB )
-40
-50
0.511.522.533.544.55
FREQUENCY (GHz)
+25C
+85C
-40C
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 127