Hittite HMC300LM1 Datasheet
MICROWAVE CORPORATION
SMT MEDIUM POWER AMPLIFIER 25.5 - 33.5 GHz
HMC300LM1
FEBRUARY 2001
Features
SMT mmWave package
1
Gain > 15 dB
Broadband Performance
Saturated Output Power: +24 dBm
Positive Supply : +5V to +7V
AMPLIFIERS
SMT
V00.1200
General Description
The HMC300LM1 is a low cost broadband
surface mount medium power amplifier that
operates between 25.5 and 33.5 GHz. A 0.25
um power pHEMT process is used to achieve
efficient gain and output power performance.
High volume surface mount re-flow assembly
techniques may be used to mount the amplifier
to the end user’s PCB. The LM1 package eliminates the need for wire bonding or die attach
mounting. The amplifier provides 15 dB of gain
and +24 dBm of saturated output power across
various microwave radio bands. This millimeter
wave amplifier requires no external RF matching components and minimal DC bypass components. The amplifier operates from a +6V Vdd
and a -0.35 Vgg gate bias.
Guaranteed Performance,
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C°52@niaG316122Bd
erutarepmeTrevonoitairaVniaG 60.070.0C°/Bd
ssoLnruteRtupnI 58 Bd
ssoLnruteRtuptuO58Bd
noitalosIesreveR 5305Bd
)Bd1P(noisserpmoCBd1rofrewoPtuptuO0232mBd
)tasP(rewoPtuptuOdetarutaS 1242mBd
)3PI(tpecretnIredrOdrihTtuptuO
)enothcaemBd5-=rewoPtupnIenot-owT(
)ddV(egatloVylppuS 57.40.652.7cdV
*)cdV0.6=ddV()ddI(tnerruCylppuS 022572Am
)1ggV(egatloVetaG 53.0-cdV
* Adjust Vgg1 between -1.0 to 0V to achieve Idd= 220 mA typical.
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 94
Vdd = +6V, -40 to +85 deg C
1262mBd
MICROWAVE CORPORATION
SMT MEDIUM POWER AMPLIFIER 25.5 - 33.5 GHz
HMC300LM1
V00.1200
Broadband Gain & Return Loss
25
20
15
10
5
0
-5
RESPONSE (dB)
-10
-15
-20
-25
20 25 30 35 40
FREQUENCY (GHz)
S21
S11
S22
Input Return Loss vs.
Temperature @ Vdd= +6V
0
-5
-10
FEBRUARY 2001
Gain vs. Temperature @ Vdd= +6V
25
20
15
GAIN (dB)
10
+25 C
5
0
24 25 26 27 28 29 30 31 32 33 34 35
+85 C
-40 C
FREQUENCY (GHz)
Output Return Loss vs.
Temperature @ Vdd= +6V
0
-5
-10
1
AMPLIFIERS
SMT
RETURN LOSS (dB)
-15
-20
24 25 26 27 28 29 30 31 32 33 34 35
+25 C
+85 C
-40 C
FREQUENCY (GHz)
P1dB Output Power vs.
Temperature @ Vdd= +6V
30
25
20
15
10
Output P1dB (dBm)
5
0
24 25 26 27 28 29 30 31 32 33 34 35
+25 C
+85 C
-40 C
FREQUENCY (GHz)
RETURN LOSS (dB)
-15
-20
24 25 26 27 28 29 30 31 32 33 34 35
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Output IP3 vs.
Temperature @ Vdd= +6V
35
30
25
20
15
10
5
THIRD ORDER INTERCEPT POINT (dBm)
0
24 25 26 27 28 29 30 31 32 33 34 35
+25 C
+85 C
-40 C
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 95
MICROWAVE CORPORATION
SMT MEDIUM POWER AMPLIFIER 25.5 - 33.5 GHz
HMC300LM1
FEBRUARY 2001
Gain vs. Vdd
1
GAIN (dB)
AMPLIFIERS
SMT
Output Return Loss vs. Vdd
25
20
15
10
Vdd=+5V
5
0
24 25 26 27 28 29 30 31 32 33 34 35
0
-5
-10
Vdd=+6V
Vdd=+7V
FREQUENCY (GHz)
Input Return Loss vs. Vdd
0
-5
-10
RETURN LOSS (dB)
-15
-20
24 25 26 27 28 29 30 31 32 33 34 35
Vdd=+5V
Vdd=+6V
Vdd=+7V
FREQUENCY (GHz)
P1dB Output Power vs. Vdd
30
25
20
15
V00.1200
10
RETURN LOSS (dB)
-15
-20
24 25 26 27 28 29 30 31 32 33 34 35
FREQUENCY (GHz)
Vdd=+5V
Vdd=+6V
Vdd=+7V
Output P1dB (dBm)
5
0
24 25 26 27 28 29 30 31 32 33 34 35
Vdd=+5V
Vdd=+6V
Vdd=+7V
FREQUENCY (GHz)
Psat Output Power vs. Vdd IP3 vs. Vdd
30
25
20
15
Psat (d Bm)
10
5
0
24 25 26 27 28 29 30 31 32 33 34 35
Vdd=+5V
Vdd=+6V
Vdd=+7V
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
35
30
25
20
15
10
5
THIRD ORDER INTERCEPT POINT (dBm)
0
24 25 26 27 28 29 30 31 32 33 34 35
Vdd=+5V
Vdd=+6V
Vdd=+7V
FREQUENCY (GHz)
1 - 96
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