Hittite HMC283LM1 Datasheet
MICROWAVE CORPORATION
SMT MEDIUM POWER GaAs AMPLIFIER 17 - 40 GHz
HMC283LM1
FEBRUARY 2001
Features
SMT mmWAVE PACKAGE
1
Psat OUTPUT POWER : +21 dBm
HIGH GAIN: 21 dB
NO EXTERNAL MATCHING REQUIRED
AMPLIFIERS
SMT
General Description
The HMC283LM1 is a Medium Power Amplifier (MPA)
in a SMT leadless chip carrier package covering 17
to 40 GHz. The LM1 is a true surface mount broadband
millimeterwave package offering low loss & excellent
I/O match preserving MMIC chip performance. Utilizing a GaAs PHEMT process, the device offers 20 dB
gain and +21 dBm output power from a bias supply of
+3.5V @ 300 mA. The packaged MPA enables
economical PCB SMT assembly for millimeterwave
point-to-point radios, LMDS, and SATCOM applications. As an alternative to chip-and-wire hybrid assemblies the HMC283LM1 eliminates the need for
wirebonding, thereby providing a consistent connection interface for the customer. The amplifier may be
used as a frequency doubler. A built-in-test pad (Vdet)
allows monitoring of microwave output power. All data
is with the non-hermetic, epoxy sealed LM1 packaged
MPA device mounted in a 50 ohm test fixture.
Guaranteed Perf ormance, Vdd = +3.5V*, Idd = 300mA, -40 to +85 deg C
V02.1100
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 74
MICROWAVE CORPORATION
SMT MEDIUM POWER GaAs AMPLIFIER 17 - 40 GHz
HMC283LM1
V02.1100
Broadband Gain & Return Loss
30
25
20
15
10
5
0
-5
RESPONSE (dB)
-10
-15
-20
-25
10 15 20 25 30 35 40
FREQUENCY (GHz)
S11
S21
S22
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
REVERSE ISOLATION (dB)
-50
+25C
+85C
-40C
FEBRUARY 2001
Gain vs. Temperature
30
25
20
15
GAIN (dB)
10
5
0
16 18 20 22 24 26 28 30 32 34 36 38 40 42
+25C
+85C
-40C
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
-10
-15
-20
INPUT R ETUR N L OSS (dB )
+25C
+85C
-40C
1
AMPLIFIERS
SMT
-60
16 18 20 22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
P1dB and Psat @ 25 oC
25
23
21
19
17
15
OUTPUT P1dB &Psat (dBm)
13
16 18 20 22 24 26 28 30 32 34 36 38 40
Psat
P1dB
FREQUEN C Y (GHz)
-25
16 18 20 22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5
-10
-15
OUTPUT RETURN LOSS (dB)
-20
16 18 20 22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
+25C
+85C
-40C
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 75
MICROWAVE CORPORATION
SMT MEDIUM POWER GaAs AMPLIFIER 17 - 40 GHz
HMC283LM1
FEBRUARY 2001
P1dB vs. Temperature
1
OUTPUT P1dB (dBm)
AMPLIFIERS
SMT
Psat vs. Temperature
Psat (dBm)
25
23
21
19
17
15
+85C
13
16 18 20 22 24 26 28 30 32 34 36 38 40
25
23
21
19
17
15
13
16 18 20 22 24 26 28 30 32 34 36 38 40
-40 C
FREQUENCY (GHz)FREQUENCY (GHz)
-40 C
+85C
FREQUENCY (GHz)
+25 C
+25 C
Power Compression @ 20 GHz
24
22
20
18
16
14
12
10
8
6
OUTPUT POWER (dBm)
4
2
0
-10-8-6-4-2 0 2 4 6 810
Pout/dBm
INPUT POWER (dBm)
Gain/dB
PAE/%
Power Compression @ 28 GHz
24
22
20
18
16
14
12
10
8
6
OUTPUT POWER (dBm)
4
2
0
-10-8-6-4-2 0 2 4 6 810
Gain/dB
Pout/dBm
PAE/%
INPUT POWER (dBm)
V02.1100
Power Compression @ 39 GHzOutput IP3 vs. Temperature
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 76
24
22
20
18
16
14
12
10
8
6
OUTPUT POWER (dBm)
4
2
0
-10-8-6-4-2 0 2 4 6 810
Gain/dB
Pout/dBm
PAE/%
INPUT POWER (dBm)
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