Hittite HMC283 Datasheet
MICROWAVE CORPORATION
GaAs MMIC MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
FEBRUARY 2001
Features
HIGH GAIN: 21 dB
1
Psat OUTPUT POWER : +21 dBm
WIDEBAND PERFORMANCE: 17 - 40 GHz
SMALL CHIP SIZE: 0.88 mm x 1.72 mm
AMPLIFIERS
DIE
Guaranteed Perf ormance,
V02.05.00
General Description
The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifier (MPA) which covers the frequency range of 17 to 40 GHz. The chip can easily be
integrated into Multi-Chip Modules (MCMs) due to its
small (1.62 mm2) size. The chip utilizes a GaAs
PHEMT process offering 20 dB gain and +21 dBm
output power from a bias supply of +3.5V @ 3000 mA.
This medium PA can be used in millimeterwave pointto-point radios, VSAT, and other SATCOM applications. The HMC283 may be used as a frequency
doubler. A B.I.T. (Buil-In-Test) pad (Vdet) allows
monitoring microwave output power. All data is with
the chip in a 50 ohm test fixture connected via r0.076
mm x 0.0127 mm (3 mil x 0.5 mil) ribbon bonds of
minimal leghth 0.31 mm(<12 mils).
Vdd = +3.5V*, Idd = 300mA, -55 to +85 deg C
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).pyTV51.0-=ggV,V5.3+=ddV()ddI(tnerruCylppuS 003004Am
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 66
MICROWAVE CORPORATION
HMC283 MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
V02.05.00
Broadband Gain & Return Loss
30
25
20
15
10
5
0
-5
RESPONSE (dB)
-10
-15
-20
-25
0 10203040
S21
S11
FREQUENCY (GHz)
S22
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
ISOLATION (dB)
-50
-60
-70
10 15 20 25 30 35 40
S12 -55 C
FREQUENCY (GHz)
S12 +85 C
S12 +25 C
Noise Figure vs. Temperature
14
12
10
8
6
4
NOISE FIGURE (dB)
2
0
10 15 20 25 30 35 40
+25 C
FREQUENCY (GHz)
+85 C
-55 C
FEBRUARY 2001
Gain vs. Temperature
30
28
26
24
22
20
GAIN (dB)
18
16
14
12
10
10 15 20 25 30 35 40
S21 -55 C
S21 +25 C
S21 +85 C
FREQUENCY (GHz)
Input Match vs. Temperature
0
-2
-4
-6
-8
-10
-12
-14
-16
INPUT RETURN LOSS (dB)
-18
-20
10 15 20 25 30 35 40
S11 -55C
S11 +85C
S11 +25 C
FREQUENCY (GHz)
Output Match vs. Temperature
0
-2
S22 +25 C
-4
-6
-8
-10
-12
-14
-16
OUTPUT RETURN LOSS (dB)
-18
-20
10 15 20 25 30 35 40
S22 +85 C
FREQUENCY (GHz)
S22-55 C
1
AMPLIFIERS
DIE
All data is with the chip in a 50 ohm test fixture connected via 0.076 mm x 0.0127 mm (3 mil x 0.5 mil) ribbon
bonds of minimal length 0.31 mm (<12 mils).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 67
MICROWAVE CORPORATION
HMC283 MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
FEBRUARY 2001
P1dB vs. Temperature
1
P1dB (dBm)
AMPLIFIERS
Psat vs. Temperature
DIE
Psat (dBm)
23
22
21
20
19
18
17
16
15
14
13
16 18 20 22 24 26 28 30 32 34 36 38 40
25
24
23
22
21
20
19
18
17
16
15
16 18 20 22 24 26 28 30 32 34 36 38 40
-55 C
+85 C+25 C
FREQUENCY (GHz)
-55 C
+25 C
+85 C
FREQUENCY (GHz)
V02.05.00
Power Compression @ 20 GHz
24
22
20
18
16
14
12
10
8
6
OUTPUT POWER (dBm)
4
2
0
-10-8-6-4-2 0 2 4 6 810
Pout/dBm
INPUT POWER (dBm)
Gain/dB
PAE/%
Power Compression @ 28 GHz
24
22
20
18
16
14
12
10
8
6
OUTPUT POWER (dBm)
4
2
0
-10-8-6-4-20246810
Gain/dB
Pout/dBm
PAE/%
INPUT POWER (dBm)
Output IP3 vs. Temperature
Frequency (GHz)
Temperature 20 28 38
-55oC 25.6 25.4 28.6
+25oC 27.5 25.9 27.1
+85oC 27 24.4 25.7
All levels in dBm
Power Compression @ 39 GHz
24
22
20
18
16
14
12
10
8
6
OUTPUT POWER (dBm)
4
2
0
-10-8-6-4-2 0 2 4 6 810
Gain/dB
Pout/dBm
PAE/%
INPUT POWER (dBm)
All data is with the chip in a 50 ohm test fixture connected via 0.076 mm x 0.0127 mm (3 mil x 0.5 mil) ribbon
bonds of minimal length 0.31 mm (<12 mils).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 68
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