hittite HMC279MS8G User Manual

查询HMC279MS8G供应商
MICROWAVE CORPORATION
Typical Applications
8
The HMC279MS8G is ideal for:
• 2.6 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 3.7 - 4.2 GHz Satellite (Receive and Transmit Bands)
Functional Diagram
AMPLIFIERS - SMT
v02.0701
HMC279MS8G
2.5 - 4.2 GHz
Features
High Gain: 36 dB
Psat Output Power: +14 dBm
Single Supply: +3V @ 60 mA
Ultra Small Package: MSOP8G
No External Matching Required
General Description
The HMC279MS8G is a +3V GaAs MMIC driver ampli­fi er covering the 2.5 - 4.2 GHz frequency range. The device is packaged in a low cost, surface mount MSOP plastic package with an exposed base paddle for improved RF ground. The amplifi er provides greater than 36dB gain and +14 dBm P1dB while operating from a single +3V supply at only 60mA. No external components are required and the amplifi er occupies less than 0.023 sq. in. (14.6 sq. mm). All data is taken with the amplifi er assembled into a 50 ohm test fi xture with the exposed ground paddle connected to RF ground.
8 - 2
Electrical Specifi cations, T
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 2.5 - 3.7 3.7 - 4.2 GHz
Gain 33 36 40 35 38 41 dB
Gain Variation over Temperature ±0.03 ±0.045 ±0.03 ±0.045 dB/°C
Input Return Loss 5 10 6 11 dB
Output Return Loss 5 9 8 13 dB
Reverse Isolation 44 52 42 48 dB
Output Power for 1 dB Compression (P1dB) 8 12 9 12 dBm
Saturated Output Power (Psat) 11 14 11 14 dBm
Output Third Order Intercept (IP3) 17 22 15 20 dBm
Noise Figure 5 8 5 8 dB
Supply Current (Idd) 60 60 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
= +25° C, Vdd= +3V
A
Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0701
HMC279MS8G
2.5 - 4.2 GHz
Broadband Gain & Return Loss Gain vs. Temperature
45 40 35 30 25 20 15 10
5 0
RESPONSE (dB)
-5
-10
-15
-20
-25 123456
S21
S22
FREQUENCY (GHz)
S11
Reverse Isolation vs. Temperature Input Match vs. Temperature
0
-10
-20
-30
-40
S12 +85 C
ISOLATION (dB)
-50
-60
-70
S12 +25 C
2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
S12 -40 C
44
42
40
38
36
34
32
30
GAIN (dB)
28
26
24
22
20
2 2.5 3 3.5 4 4.5 5
0
-5
-10
-15
S11 +25 C
-20
INPUT RETURN LOSS (dB)
-25 2 2.5 3 3.5 4 4.5 5
S21 -40 C
S21 +25 C
S21 +85 C
FREQUENCY (GHz)
S11 -40 C
FREQUENCY (GHz)
8
AMPLIFIERS - SMT
S11 +85 C
Noise Figure vs. Temperature Output Match vs. Temperature
10
8
6
4
NOISE FIGURE (dB)
2
0
2 2.5 3 3.5 4 4.5 5
+85 C +25 C
-40 C
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
0
-5
-10
-15
-20
OUTPUT RETURN LOSS (dB)
-25 2 2.5 3 3.5 4 4.5 5
S22 +25 C
FREQUENCY (GHz)
S22 -40 C
S22 +85 C
8 - 3
MICROWAVE CORPORATION
v02.0701
HMC279MS8G
Power Compression @ 3.5 GHz Power Compression @ 4 GHz
8
20
15
10
5
OUTPUT POWER (dBm)
0
-40 -35 -30 -25 -20 -15
INPUT POWER (dBm)
Psat vs. Temperature P1dB vs. Temperature
AMPLIFIERS - SMT
17
16
15
14
13
Psat (dBm)
12
11
10
9
2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
+85 C
-40 C
+25 C
45
40
GAIN (dB)
35
30
25
2.5 - 4.2 GHz
20
15
10
5
OUTPUT POWER (dBm)
0
-40 -35 -30 -25 -20 -15
INPUT POWER (dBm)
17
16
15
14
13
12
P1dB (dBm)
11
10
9
2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
-40 C
+25 C
+85 C
45
40
GAIN (dB)
35
30
25
8 - 4
Output IP3 vs. Temperature Spur Data @ P1dB Output (3.8 GHz)
Frequency (GHz)
Temperature 3.4 3.8 4.2
-40 °C
+25 °C
+85 °C
All levels in dBm
23.80 22.13 23.92
24.00 23.42 20.82
25.58 24.83 22.23
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
2FO 3FO 4FO 5FO 6FO
-31 -46.5 -56.5 -92.3 -102.33
All power levels are in dBc with respect to the output power (FO)
Spur Data at P1dB
MICROWAVE CORPORATION
v02.0701
HMC279MS8G
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +8.0 Vdc
RF Input Power (Vdd = + 3.0 Vdc) -10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C) (derate 20 mW/°C above 85 °C)
Thermal Resistance (channel to ground paddle)
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
1.3 W
50 °C/W
Outline Drawing
2.5 - 4.2 GHz
8
AMPLIFIERS - SMT
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 5
MICROWAVE CORPORATION
v02.0701
HMC279MS8G
Evaluation PCB
8
AMPLIFIERS - SMT
2.5 - 4.2 GHz
8 - 6
List of Material
Item Description
J1, J2 PC Mount SMA Connector
J3 DC Pin
U1 HMC279MS8G Amplifi er
PCB* 102810 Evaluation Board
*Circuit Board Material: Roger 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A suffi cient number of VIA holes should be used to con­nect the top and bottom ground planes. The evalua­tion circuit board shown is available from Hittite upon request.
Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0701
HMC279MS8G
Notes:
2.5 - 4.2 GHz
8
AMPLIFIERS - SMT
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 7
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