Hittite HMC268LM1 Datasheet
MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
HMC268LM1
FEBRUARY 2001
Features
SMT mmWAVE PACKAGE
1
EXCELLENT NOISE FIGURE : 2.6 dB
15 dB GAIN
P1 dB OUTPUT POWER: +13 dBm
AMPLIFIERS
SMT
V01.0900
General Description
The HMC268LM1 is a two stage GaAs MMIC Low
Noise Amplifier (LNA) in a SMT leadless chip
carrier package covering 20 to 32 GHz. The LM1
is a true surface mount broadband millimeterwave
package offering low loss & excellent I/O match,
preserving MMIC chip performance. Utilizing a
GaAs PHEMT process the device offers 2.6 dB
noise figure, 15 dB gain and +13 dBm output
power from a bias supply of +4V @ 45 mA. The
packaged LNA enables economical PCB SMT
assembly for millimeterwave point-to-point radios, LMDS, and SATCOM applications. As an
alternative to chip-and-wire hybrid assemblies
the HMC268LM1 eliminates the need for
wirebonding, thereby providing a consistent connection interface for the customer. All data is with
the non-hermetic, epoxy sealed LM1 packaged
LNA device mounted in a 50 ohm test fixture.
Guaranteed Performance, Vdd = +4V*, -55 to +85 deg C
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ssoLnruteRtuptuO2187Bd
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)Bd1P(noisserpmoCBd1rofrewoPtuptuO711931931mBd
)tasP(rewoPtuptuOdetarutaS316141715181mBd
)3PI(tpecretnIredrOdrihTtuptuO312271225112mBd
)ddV(egatloVylppuS57.30.452.457.30.452.457.30.452.4cdV
)2ggV&1ggV(egatloVylppuS0.2-51.0-0.00.2-51.0-0.00.2-51.0-0.0cdV
)ddI(tnerruCylppuS540554055405Am
* Vdd = +4V, adjust Vgg1 & Vgg2 between -2.0 to 0.0 Vdc to achieve Idd = 45 mA.
** Acceptable gain and NF peformance is achievable down to 17 GHz.
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
HMC268LM1
V01.0900
Broadband Gain and Return Loss
20
15
10
5
0
-5
-10
RESPONSE (dB)
-15
-20
-25
10 15 20 25 30 35
FREQUENCY (GHz)
S21
S11
S22
Isolation
0
-10
-20
-30
-40
REVERSE ISOLATION (dB)
FEBRUARY 2001
Gain
20
15
10
GAIN (dB)
5
0
15 20 25 30 35
FREQUENCY (GHz)
Input Return Loss
0
-5
-10
-15
INPUT R ETUR N L OSS (dB )
1
AMPLIFIERS
SMT
-50
15 20 25 30 35
FREQUENCY (GHz)
Noise Figure
5
4
3
2
NOISE FIGURE (dB)
1
0
20 22 24 26 28 30 32 34
+85 C
+25 C
FREQUENCY (GHz)
-40 C
-20
15 20 25 30 35
FREQUENCY (GHz)
Output Return Loss
0
-5
-10
-15
OUTPUT RETURN LOSS (dB)
-20
15 20 25 30 35
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 29
MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
HMC268LM1
FEBRUARY 2001
Output P1dB vs. Temperature
1
P1dB OUTPUT (dBm)
AMPLIFIERS
SMT
20
18
16
14
12
10
8
6
4
2
0
20 22 24 26 28 30 32
+25C
FREQUENCY (GHz)
-40C
+85C
Psat vs. Temperature
20
+25C
18
16
14
12
10
8
Psat (dBm)
6
4
2
0
20 22 24 26 28 30 32
Output IP3 vs. Temperature
THIRD ORDER INTERCEPT (dBm)
-40C
+85C
FREQUENCY (GHz)
V01.0900
30
-40C
25
20
+25C
15
+85C
10
20 22 24 26 28 30 32
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 30
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