Hittite HMC261LM1 Datasheet
MICROWAVE CORPORATION
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
HMC261LM1
FEBRUARY 2001
Features
SMT mmWAVE PACKAGE
1
13 dB GAIN
P1dB OUTPUT POWER: +12 dBm
SINGLE POSITIVE SUPPLY : +3V to +4V
AMPLIFIERS
NO GATE BIAS
SMT
V01.0900
General Description
The HMC261LM1 is a GaAs MMIC distributed
amplifier in a SMT leadless chip carrier package
covering 20 to 32 GHz. The LM1 is a true
surface mount broadband millimeterwave package offering low loss & excellent I/O match,
preserving MMIC chip performance. Utilizing a
GaAs PHEMT process the device offers 13 dB
gain and +14 dBm saturated output power from
a bias supply of +4V @ 75 mA. The packaged
amplifier enables economical PCB SMT assembly for millimeterwave point-to-point radios,
LMDS, and SATCOM applications. As an alternative to chip-and-wire hybrid assemblies the
HMC261LM1 eliminates the need for
wirebonding, thereby providing a consistent
connection interface for the customer. All data is
with the non-hermetic, epoxy sealed LM1 packaged LNA device mounted in a 50 ohm test
fixture. This part replaces the HMC261CB1 by
offering more bandwidth and gain.
Guaranteed Performance, Vdd = +4V, -55 to +85 deg C
retemaraP .niM .pyT .xaM .niM .pyT .xaM stinU
egnaRycneuqerF23-0203-72zHG
niaG83171013161Bd
ssoLnruteRtupnI5868Bd
ssoLnruteRtuptuO01210121Bd
noitalosIesreveR5304Bd
)oBd1P(noisserpmoCBd1rofrewoPtuptuO821821mBd
)tasP(rewoPtuptuOdetarutaS01411141mBd
)3PI(tpecretnIredrOdrihTtuptuO61127112mBd
erugiFesioN5.85.2175.8Bd
)ddV(egatloVylppuS57.20.452.457.20.452.4cdV
)cdV0.4=ddV()ddI(tnerruCylppuS57095709Am
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 8
MICROWAVE CORPORATION
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
HMC261LM 1
V01.0900
Gain @ Vdd = +4V
20
15
10
GAIN (dB)
5
0
15 20 25 30 35
FREQUENCY (GHz)
Return Loss @ Vdd = +4V
0
-5
-10
-15
S11
S22
Gain @ Vdd = +3V
20
15
10
GAIN (dB)
5
0
15 20 25 30 35
FREQUENCY (GHz)
Return Loss @ Vdd = +3V
0
-5
-10
-15
FEBRUARY 2001
S11
S22
1
AMPLIFIERS
SMT
-20
REVERSE ISOLATION (dB)
-25
-30
15 20 25 30 35
FREQUENCY (GHz)
Reverse Isolation @Vdd = +4V
0
-10
-20
-30
-40
REVERSE ISOLATION (dB)
-50
15 20 25 30 35
FREQUENCY (GHz)
-20
RETURN LOSS (dB)
-25
-30
15 20 25 30 35
FREQUENCY (GHz)
Reverse Isolation @Vdd = +3V
0
-10
-20
-30
-40
REVERSE ISOLATION (dB)
-50
15 20 25 30 35
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 9
MICROWAVE CORPORATION
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
HMC261LM1
FEBRUARY 2001
P1dB Output Power vs.
Temperature @ Vdd= +3V
1
Output P1 dB (dBm)
AMPLIFIERS
Psat vs. Temperature @ Vdd = +3V
SMT
Psat (dBm)
20
+25 C
+85 C
15
10
5
0
20 22 24 26 28 30 32
FREQUENCY (GHz)
20
15
10
5
+25 C
+85 C
-40 C
-40 C
V01.0900
P1dB Output Power vs.
Temperature @ Vdd= +4V
20
15
10
Output P1 dB (dBm)
5
0
20 22 24 26 28 30 32
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Psat vs. Temperature @ Vdd= +4V
20
15
10
Psat (dBm)
5
+25 C
+85 C
-40 C
0
20 22 24 26 28 30 32
FREQUENCY (GHz)
0
20 22 24 26 28 30 32
FREQUENCY (GHz)
IP3 vs. Temperature @ Vdd = +3V IP3 vs. Temperature @ Vdd = +4V
30
+25 C
+85 C
25
20
15
Third O rd e r Interc ept Po int (d B m)
10
20 22 24 26 28 30 32
FREQUENCY (GHz)
-40 C
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 10
30
25
20
15
Third O rd e r Interc ept Po int (d B m)
10
20 22 24 26 28 30 32
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Loading...