hittite HMC174MS8 User Manual

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14

MICROWAVE CORPORATION

Typical Applications

The HMC174MS8 is ideal for:

• ISM Applications

• PCMCIA Wireless Cards

• Portable Wireless

Functional Diagram

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HMC174MS8

GaAs MMIC T/R SWITCH

DC - 3 GHz

Features

Ultra Small Package: MSOP8

High Third Order Intercept: +60 dBm

Single Positive Supply: +3 to +10V

High RF power Capabilty

General Description

The HMC174MS8 is a low-cost SPDT switch in
an 8-lead MSOP package for use in transmit­receive applications which require very low dis­tortion at high signal power levels. The device
can control signals from DC to 3.0 GHz and is
especially suited for 900 MHz, 1.8 - 2.2 GHz, and

2.4 GHz ISM applications with only 0.5 dB loss.
The design provides exceptional intermodulation
performance; providing a +60 dBm third order
intercept at 8 Volt bias. RF1 and RF2 are refl ec­tive shorts when “OFF”. On-chip circuitry allows
single positive supply operation at very low DC
current with control inputs compatible with CMOS
and most TTL logic families.

Electrical Specifi cations, T

Insertion Loss

Isolation

SWITCHES - SMT

Return Loss

Input Power for 1dB Compression 0/8V Control

Input Third Order Intercept 0/8V Control

Switching Characteristics DC - 3.0 GHz

= +25° C, Vdd = +5 Vdc, 50 Ohm System

A

Parameter Frequency Min. Typ. Max. Units

tON, tOFF (50% CTL to 10/90% RF)

tRISE, tFALL (10/90% RF)

DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz

DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz

DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz

0.5 - 1.0 GHz

0.5 - 3.0 GHz

0.5 - 1.0 GHz

0.5 - 3.0 GHz

22
20
17
13

20
16
13

9

35
34

55
55

0.5

0.5

0.7

1.4

25
24
21
17

28
21
17
11

39
38

60
60

10
24

0.7

0.8

1.0

1.8

dB
dB
dB
dB

dB
dB
dB
dB

dB
dB
dB
dB

dBm
dBm

dBm
dBm

ns
ns

14 - 20

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v01.0101

HMC174MS8

GaAs MMIC T/R SWITCH

DC - 3 GHz

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

Insertion Loss

0

Isolation

0

-1

-2

-3

INSERTION LOSS (dB)

-4

-5
0123

FREQUENCY (GHz)

Return Loss

0

-10

-20

-30

INPUT RETURN LOSS (dB)

-10

-20

ISOLATION (dB)

-30

-40
0123

FREQUENCY (GHz)

14

-40
0123

Input 0.1 and 1.0 dB
Compression vs. Bias Voltage

45

1db at 1900MHz

40

35

30

COMPRESSION (dBm)

25

2 4 6 8 10 12

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

1dB at 900MHz

0.1dB at 900MHz

0.1dB at 1900MHz

BIAS (Volts)

FREQUENCY (GHz)

Input Third Order
Intercept vs. Bias Voltage

65

60

55

50

IP3 (dBm)

45

40

35

2 4 6 8 10 12

Order Online at www.hittite.com

SWITCHES - SMT

900MHz

1900MHz

BIAS (Volts)

14 - 21

MICROWAVE CORPORATION

Carrier at 900 MHz Carrier at 1900 MHz

Input Power

Bias

for 0.1 dB

Vdd

Compression

(Volts) (dBm) (dBm) (dBm) (dBm)

327 31 26 30

430 34 29 33

532 36 31 35

836 39 35 38

10 37 40 36 39

Input Power

for 1.0 dB

Compression

Input Power

for 0.1 dB

Compression

Input Power

for 1.0 dB

Compression

Caution: Do not operate in 1dB compression at power
levels above +35dBm and do not ‘hot switch’ power levels

v01.0101

greater than +23dBm (V

= +5Vdc).

dd

HMC174MS8

GaAs MMIC T/R SWITCH

DC - 3 GHz

Distortion vs. Bias VoltageCompression vs. Bias Voltages

1 Watt Carrier at 900 MHz 1 Watt Carrier at 1900 MHz

Third

Order

Second

Order

Intercept

Second

Harmonic

Bias

Vdd

Intercept

(Volts) (dBm) (dBm) (dBc) (dBm) (dBm) (dBc)

343 71 45 4278 55

448 85 55 4688 65

553 90 56 5187 58

860 90 58 6090 59

10 60 90 59 60 90 60

Third

Order

Intercept

Second

Order

Intercept

Second

Harmonic

14

Truth Table

*Control Input Voltage Tolerances are ± 0.2 Vdc

Bias Control Input*

Vdd

(Vdc)A(Vdc)B(Vdc)

3 0 0 30 -15 -15 OFF OFF

3 0 Vdd 25 -25 0 ON OFF

3 Vdd 0 25 0 -25 OFF ON

5 0 0 110 -55 -55 OFF OFF

5 0 Vdd 115 -100 -15 ON OFF

5 Vdd 0 115 -15 -100 OFF ON

10 0 0 380 -190 -190 OFF OFF

SWITCHES - SMT

10 0 Vdd 495 -275 -220 ON OFF

10 Vdd 0 495 -220 -275 OFF ON

5 -Vdd Vdd 600 -600 225 ON OFF

5 Vdd -Vdd 600 225 -600 OFF ON

Bias

Current

Idd

(uA)

Control
Current

Ia

(uA)

Control
Current

Ib

(uA)

Signal Path State

RF to

RF1

RF to

RF2

14 - 22

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v01.0101

Absolute Maximum Ratings

Bias Voltage Range (Vdd) -0.2 to +12 Vdc

Control Voltage Range (A & B) -0.2 to +Vdd Vdc

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +85 °C

Outline Drawing

HMC174MS8

GaAs MMIC T/R SWITCH

DC - 3 GHz

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

14

SWITCHES - SMT

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

14 - 23

MICROWAVE CORPORATION

v01.0101

Typical Application Circuit

HMC174MS8

GaAs MMIC T/R SWITCH

DC - 3 GHz

14

Notes:

1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.

2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS

SWITCHES - SMT

logic gates and to pin 4 of the RF switch.

3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines
lowest frequency of operation.

4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.

14 - 24

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

Evaluation Circuit Board

v01.0101

HMC174MS8

GaAs MMIC T/R SWITCH

DC - 3 GHz

List of Material

Item Description

J1 - J3 PC Mount SMA RF Connector

J4 - J7 DC Pin

C1 - C3 100 pF capacitor, 0402 Pkg.

C4 10,000 pF capacitor, 0603 Pkg.

U1 HMC174MS8 T/R Switch

The circuit board used in the fi nal application should
be generated with proper RF circuit design tech­niques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown above. The evalu­ation circuit board shown above is available from Hit­tite Microwave Corporation upon request.

14

SWITCHES - SMT

PCB* 104122 Evaluation PCB

* Circuit Board Material: Rogers 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

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