HITACHI PF0414B Datasheet
PF0414B
MOS FET Power Amplifier Module
for DCS 1800 Handy Phone
Application
For DCS 1800 class1 1710 to 1785 MHz.
Features
• 3stage amplifier : 0 dBm input
• Lead less thin & small package : 2 mm Max & 0.2cc
• High efficiency : 40% Typ at 32.5 dBm
• Wide gain control range : 70 dB Typ
• Low voltage operation : 3.5 V
ADE-208-432C (Z)
4th Edition
December 1997
Pin Arrangement
• RF-K
4
3
G
G
G
G
1
1: Pin
2: Vapc
3: Vdd
2
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item Symbol Rating Unit
Supply voltage V
Supply current I
V
voltage V
APC
Input power Pin 10 mW
Operating case temperature Tc (op) –30 to +100 °C
Storage temperature Tstg –30 to +100 °C
Output power Pout 3 W
DD
DD
APC
8V
2A
4V
PF0414B
C
C
C
Electrical Characteristics (Tc = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Frequency range f 1710 — 1785 MHz
Control voltage range V
Drain cutoff current I
Total efficiency η
APC
DS
T
2nd harmonic distortion 2nd H.D. — –45 –35 dBc Pout = 32.5 dBm (at APC controlled),
3rd harmonic distortion 3rd H.D. — –45 –35 dBc RL = Rg = 50 Ω, Tc = 25°C
Input VSWR VSWR (in) — 1.5 3 —
Output power (1) Pout (1) 32.5 33.0 — dBm Pin = 0 dBm, VDD = 3.5 V,
Output power (2) Pout (2) 31 31.5 — dBm Pin = 0 dBm, VDD = 3.0 V,
Isolation — — –36 –33 dBm Pin = 0 dBm, VDD = 3.5 V,
Switching time tr, tf — 1 2 µs Pin = 0 dBm, VDD = 3.5 V,
Stability — No parasitic
0.5 — 2.2 V
— — 100 µAVDD = 8 V, V
APC
= 0 V
35 40 — % Pin = 0 dBm, VDD = 3.5 V,
V
= 2.2 V, RL = Rg = 50 Ω,
AP
Tc = 25°C
V
= 2.2 V, RL = Rg = 50 Ω,
AP
Tc = 85°C
V
= 0.5 V, RL = Rg = 50 Ω,
AP
Tc = 25°C
Pout = 32.5 dBm, R
= Rg = 50 Ω,
L
Tc = 25°C
— Pin = 0 dBm, VDD = 3 to 5.1 V,
oscillation
Pout ≤ 32.5 dBm (at APC controlled),
Rg = 50 Ω, t = 20 sec., Tc = 25°C,
Output VSWR = 6 : 1 All phases
2
Loading...