HITACHI PF0414A Datasheet
MOS FET Power Amplifier Module
for DCS 1800 Handy Phone
Application
For DCS 1800 class1 1710 to 1785 MHz.
Features
• 3stage amplifier
• Small package: 0.2cc
• High efficiency: 45% Typ
• High speed switching: 0.9 µsec
PF0414A
ADE-208-431B (Z)
3rd Edition
December 1997
Pin Arrangement
• RF-K
4
3
G
G
G
G
1
1: Pin
2: Vapc
3: Vdd
2
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item Symbol Rating Unit
Supply voltage V
Supply current I
V
voltage V
APC
Input power Pin 20 mW
Operating case temperature Tc (op) –30 to +100 °C
Storage temperature Tstg –30 to +100 °C
Output power Pout 3 W
DD
DD
APC
11 V
3A
6V
PF0414A
C
C
C
Electrical Characteristics (Tc = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Frequency range f 1710 — 1785 MHz
Control voltage range V
Drain cutoff current I
Total efficiency η
APC
DS
T
2nd harmonic distortion 2nd H.D. — –45 –35 dBc Pout = 1.8 W (at APC controlled),
3rd harmonic distortion 3rd H.D. — –45 –35 dBc RL = Rg = 50 Ω, Tc = 25°C
Input VSWR VSWR (in) — 1.5 3 —
Output power (1) Pout (1) 2.0 2.4 — W Pin = 2 mW, VDD = 4.8 V,
Output power (2) Pout (2) 1.2 1.5 — W Pin = 2 mW, VDD = 4.3 V,
Isolation — — –40 –30 dBm Pin = 2 mW, VDD = 4.8 V,
Switching time tr, tf — 0.9 2 µs Pin = 2 mW, VDD = 4.8 V,
Stability — No parasitic oscillation — Pin = 2 mW, VDD = 6 V,
0.5 — 3 V
— — 100 µAVDD = 11 V, V
APC
= 0 V
37 45 — % Pin = 2 mW, VDD = 4.8 V,
V
= 3 V, RL = Rg = 50 Ω,
AP
Tc = 25°C
V
= 3 V, RL = Rg = 50 Ω,
AP
Tc = 80°C
V
= 0.5 V, RL = Rg = 50 Ω,
AP
Tc = 25°C
Pout = 1.8 W, R
= Rg = 50 Ω,
L
Tc = 25°C
Ids ≤ 0.9 A (only pulsed),
Pout ≤ 1.8 W (at APC controlled),
Rg = 50 Ω, t = 20 sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
2
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