HITACHI PF0210 Datasheet

PF0210

MOS FET Power Amplifier Module for ADC Mobile Phone

ADE-208-102E (Z)

Features

• High efficiency: 34% Typ for CW
30% Typ for π/4-DQPSK

• Low input power: 0 dBm ave. Typ for π /4-DQPSK

• Simple bias circuit

• High speed switching: 8 µs Typ

Pin Arrangement

Preliminary

6th Edition

July 1996

• RF-B2

5

1: Pin
2: V

4

3

2

5

1

APC

3: V

DD

4: Pout
5: GND

PF0210

Internal Diagram and External Circuit

G

GND

Pin1

Pin

Z1

Pin2

V

APC

C1 C3 C2

Pin

FB1 FB2

V

APC

Pin3

V

DD

Pin4
Pout

V

DD

Pout

G

GND

Z2

C1 = C2 = 0.01 µF (Ceramic chip capacitor)
C3 = 330 µF (Aluminum Electrolyte Capacitor)
FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent
Z1 = Z2 = 50 Ω (Microstrip line)

Absolute Maximum Ratings (Tc = 25°C)

Item Symbol Rating Unit

Supply voltage V
Supply current I
V

voltage V

APC

DD

DD

APC

Input power Pin 20 mW
Operating case temperature Tc (op) –30 to +100 °C
Storage temperature Tstg –40 to +110 °C

17 V
4A

5.5 V

2

Electrical Characteristics (Tc = 25°C)

Analog Transmission

Item Symbol Min Typ Max Unit Test Condition

Frequency f 824 — 849 MHz —
Drain cutoff current I

DS

Total efficiency(1) ηT(1) 30 34 — % Pin = 3 dBm, VDD = 12.5 V,
2nd harmonic distortion 2nd H.D. — –55 –30 dBc Pout = 6 W (V
3rd harmonic distortion 3rd H.D. — –60 –40 dBc
Input VSWR VSWR (in) — 2 3 —
Output power Pout 6 9 — W Pin = 3 dBm, VDD = 12.5 V,

Isolation — — –45 –40 dBm Pin = 3dBm, VDD = 12.5 V,

Stability — No parasitic oscillation — Pin = 3 dBm, VDD = 12.5 V,

— — 500 µAVDD = 17 V, V

V

= 4 V

APC

V

= 0.5 V

APC

Pout ≤ 6 W,
Output VSWR = 20:1 All phases

= 0 V

APC

controlled),

APC

PF0210

Digital Transmission

Item Symbol Min Typ Max Unit Test Condition

Frequency f 824 — 849 MHz —
Total efficiency(2) ηT(2) 25 30 — % Pin controlled (π/4-DQPSK, √α =
Adjacent channel P
leakage power P

(30k) — –30 –28 dBc 0.35, 48.6 kbps),

ADJ

(60k) — –50 –46 dBc BW =24.3 kHz with Root Nyquist

ADJ

Input power Pin — — 5 dBm ave. Filter,

Pout = 5.5 W ave., V

= 3.9 V

VAPC

= 12.5 V

DD

Mechanical Characteristics

Item Conditions Spec

Torque for screw up the heatsink flange M3 Screw Bolts 4 to 6 kg•cm
Warp size of the heatsink flange: S

S

S = 0
+0.3/– 0 mm

3

PF0210

Characteristics Curve

6

5

4

5

4

(V)

3

APC

V

APC

η

, ηT, VSWR (in) vs. Frequency

V

APC

60
Pin = 2 mW
V

= 12.5 V

DD

Pout = 6 W

50

40

(%)

T

T

30

3

V.S.W.R. (in)

Apc Voltage V

2

1

6

5

4

3

V.S.W.R. (in)

20

16

12

Output Power Pout (W)

2

2

1

0
824

8

4

V

SWRin

829 839

834 844

Frequency f (MHz)

Pout, η

, VSWR (in) vs. Frequency

T

η

T

Pout

V

SWRin

Pin = 2 mW
V

= 12.5 V

DD

V

= 3.9 V

APC

849

20

10

0

60

50

40

30

20

10

Efficiency η

(%)

T

Efficiency η

1

0
824

829 839

834 844

0

849

Frequency f (MHz)

4