HITACHI PF01411B Datasheet
PF01411B
MOS FET Power Amplifier Module
for E-GSM Handy Phone
Application
• For E-GSM class4 880 to 915 MHz
• For 3.5 V nominal battery use
Features
• High gain 3stage amplifier : 0 dBm input
• Lead less thin & Small package : 2 mm Max, 0.2cc
• High efficiency : 45% Typ at 35.5 dBm
• Wide gain control range : 70 dB Typ
ADE-208-434B (Z)
3rd Edition
Nov. 1997
Pin Arrangement
3
G
G
4
G
G
1
1: Pin
2: Vapc
3: Vdd
2
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item Symbol Rating Unit
Supply voltage V
Supply current I
V
voltage V
APC
Input power Pin 10 mW
Operating case temperature Tc (op) –30 to +100 °C
Storage temperature Tstg –30 to +100 °C
Output power Pout 5 W
DD
DD
APC
8V
3A
4V
PF01411B
Electrical Characteristics (Tc = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Frequency range f 880 — 915 MHz
Control voltage range V
Drain cutoff current I
Total efficiency
APC
DS
η
T
2nd harmonic distortion 2nd H.D. — –45 –35 dBc Pout = 35.5dBm, Vapc = control
3rd harmonic distortion 3rd H.D. — –45 –35 dBc
Input VSWR VSWR (in) — 1.5 3 —
Output power (1) Pout (1) 35.5 36.0 — dBm Pin = 0dBm, VDD = 3.5V,
Output power (2) Pout (2) 33.5 34.2 — dBm Pin = 0dBm, VDD = 3.0V,
Isolation — — –40 –36 dBm Pin = 0dBm, VDD = 3.5V,
Switching time tr, tf — 1 2
Stability — No parasitic oscillation — Pin = 0dBm, VDD = 3 to 5.1V,
Load VSWR tolerance — No degradation — Pin = 0dBm, VDD = 3 to 5.1V,
0.5 — 2.2 V
— — 100
µA
VDD = 8V, V
APC
= 0V
40 45 — % Pin = 0dBm, VDD = 3.5V,
R
= Rg = 50Ω, Tc = 25°C
L
V
= 2.2V, RL = Rg = 50Ω,
APC
Tc = 25°C
V
= 2.2V, RL = Rg = 50Ω,
APC
Tc = 85°C
V
= 0.5V, RL = Rg = 50Ω,
APC
Tc = 25°C
µs
Pin = 0dBm, VDD = 3.5V,
Pout = 0 to 35.5dBm
R
= Rg = 50Ω, Tc = 25°C
L
Pout ≤ 35.5dBm,
Vapc ≤ 2.2V GSM pulse.
Rg = 50Ω, Tc = 25°C,
Output VSWR = 6 : 1 All phases
Pout ≤ 35.5dBm,
Vapc ≤ 2.2V GSM pulse.
Rg = 50Ω, t = 20sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
2
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