HITACHI PF01411A Datasheet
PF01411A
MOS FET Power Amplifier Module
for E-GSM Handy Phone
Application
• For E-GSM class4 880 to 915 MHz
• For 4.8V nominal battery use
Features
• High gain 3stage amplifier : 0 dBm input
• Lead less thin & Small package : 2 mm Max, 0.2cc
• High efficiency : 45% Typ at 3.8 W
• Wide gain control range : 90 dB Typ
ADE-208-433C (Z)
4th Edition
February 1997
Pin Arrangement
• RF-K
4
3
G
G
G
G
1
1: Pin
2: Vapc
3: Vdd
2
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item Symbol Rating Unit
Supply voltage V
Supply current I
V
voltage V
APC
Input power Pin 10 mW
Operating case temperature Tc (op) –30 to +100 °C
Storage temperature Tstg –30 to +100 °C
Output power Pout 5 W
DD
DD
APC
10 V
3A
4V
PF01411A
Electrical Characteristics (Tc = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Frequency range f 880 — 915 MHz
Control voltage range V
Drain cutoff current I
Total efficiency
APC
DS
η
T
2nd harmonic distortion 2nd H.D. — –45 –35 dBc Pout = 3.8 W, Vapc = controlled
3rd harmonic distortion 3rd H.D. — –45 –35 dBc
Input VSWR VSWR (in) — 1.5 3 —
Output power (1) Pout (1) 3.8 4.3 — W Pin = 1 mW, VDD = 4.8 V,
Output power (2) Pout (2) 2.5 2.9 — W Pin = 1 mW, VDD = 4.3 V,
Isolation — — –50 –40 dBm Pin = 1 mW, VDD = 4.8 V,
Switching time tr, tf — 1 2
Stability &
— No parasitic oscillation
Load VSWR tolerance
0.5 — 3.0 V
— — 100
µA
VDD = 10 V, V
APC
= 0 V
40 45 — % Pin = 1 mW, VDD = 4.8 V,
R
= Rg = 50 Ω, Tc = 25°C
L
V
= 3.0 V, RL = Rg = 50 Ω,
APC
Tc = 25°C
V
= 3.0 V, RL = Rg = 50 Ω,
APC
Tc = 80°C
V
= 0.5 V, RL = Rg = 50 Ω,
APC
Tc = 25°C
µs
Pin = 1 mW, VDD = 4.8 V,
Pout = 3.8 W, R
= Rg = 50 Ω,
L
Tc = 25°C
— Pin = 1 mW, VDD = 4 to 7 V,
&
No degradation
Pout ≤ 3.8 W,
Vapc ≤ 3 V GSM pulse.
Rg = 50 Ω, t = 20sec., Tc = 25°C,
Output VSWR = 6 : 1 All phases
2
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