HITACHI PF01410A Datasheet
MOS FET Power Amplifier Module
Application
• For GSM class4 890 to 915 MHz
Features
• 4.8 V operation 2 stage amplifier
• Small package
• High efficiency : 45% Typ
• High speed switching : 1 µsec
PF01410A
for GSM Handy Phone
ADE-208-424B (Z)
Product Preview
3rd. Edition
November 1997
Pin Arrangement
3
G
G
4
G
G
1
1: Pin
2: Vapc
3: Vdd
2
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item Symbol Rating Unit
Supply voltage V
Supply current I
V
voltage V
APC
Input power Pin 50 mW
Operating case temperature Tc (op) –30 to +100 °C
Storage temperature Tstg –30 to +100 °C
Output power Pout 4 W
DD
DD
APC
10 V
3A
4V
PF01410A
Electrical Characteristics (Tc = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Frequency range f 890 — 915 MHz —
Control voltage range V
Drain cutoff current I
Total efficiency
APC
DS
η
T
2nd harmonic distortion 2nd H.D. — –45 –35 dBc Pout = 2.8 W (At APC controlled)
3rd harmonic distortion 3rd H.D. — –45 –35 dBc
Input VSWR VSWR (in) — 1.5 3.0 —
Output power (1) Pout (1) 2.8 3.3 — W Pin = +8 dBm, VDD = 4.8 V,
Output power (2) Pout (2) 1.5 1.8 — W Pin = +8 dBm, VDD = 4 V,
Isolation — — –35 –20 dBm Pin = +12.5 dBm, VDD = 4.8 V,
Switching time tr, t
f
Stability — No parasitic
0.1 — 2.5 V —
— — 100
µA
VDD = 10 V, V
APC
= 0 V
38 45 — % Pin = +8 dBm, VDD = 4.8 V,
R
= Rg = 50Ω, Tc = 25°C
L
V
= 2.5 V, RL = Rg = 50Ω,
APC
Tc = 25°C
V
= 2.5 V, RL = Rg = 50Ω,
APC
Tc = 85°C
V
= 0.1 V, RL = Rg = 50Ω,
APC
Tc = 25°C
—1 2
µs
Pin = +8 dBm, VDD = 4.8 V,
R
= Rg = 50Ω, Tc = 25°C
L
Time from Pout = –10 to +34.5 dBm
— Pin = +8 dBm, VDD = 7 V,
oscillation
Pout ≤ 2.8 W (At APC controlled),
Rg = 50 Ω, Tc = 25°C,
Output VSWR = 8 : 1 All phases
2
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