HITACHI PF00105A Datasheet
PF00105A
MOS FET Power Amplifier Module
for AMPS Handy Phone
Features
• Low voltage operation : 4.6 V
• 2 stage amplifier : +8 dBm input
• Lead less small package : 0.2 cc
• High efficiency : 48% Typ at 1 W
• Low power control current : 500 µA Typ
Pin Arrangement
ADE-208-447C (Z)
4th Edition
February 1998
• RF-K
4
3
G
G
G
G
1
1: Pin
2: Vapc
3: Vdd
2
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item Symbol Rating Unit
Supply voltage V
Supply current I
V
voltage V
APC
Input power Pin 20 mW
Operating case temperature Tc (op) –30 to +100 °C
Storage temperature Tstg –30 to +100 °C
Output power Pout 2 W
DD
DD
APC
10 V
1A
4.5 V
PF00105A
Electrical Characteristics (Tc = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Frequency range f 824 — 849 MHz —
Drain cutoff current I
Total efficiency
DS
η
T
2nd harmonic distortion 2nd H.D. — –40 –30 dBc Pout = 1 W (at APC controlled)
3rd harmonic distortion 3rd H.D. — –40 –30 dBc
Input VSWR VSWR (in) — 1.5 3.0 —
Output power Pout 1.0 1.1 — W Pin = +8 dBm, VDD = 4.6 V,
Isolation — — –20 +6 dBm Pin = +8 dBm, VDD = 4.6 V,
Stability — No parasitic
Load VSWR tolerance — No parasitic
——20
µA
VDD = 7 V, V
APC
= 0 V
45 48 — % Pin = +8 dBm, VDD = 4.6 V,
R
= Rg = 50Ω, Tc = 25°C
L
V
= 3 V, RL = Rg = 50Ω,
APC
Tc = 25°C
V
= 0.1 V, RL = Rg = 50Ω,
APC
Tc = 25°C
— Pin = +8 dBm, VDD = 4.3 to 6 V,
oscillation
Pout ≤ 1.2 W (at APC controlled),
Rg = 50 Ω, Tc = 25°C,
Output VSWR = 3 : 1 All phases
— Pin = +8 dBm, VDD = 4.3 to 6 V,
oscillation
Pout ≤ 1.2 W (at APC controlled),
Rg = 50 Ω, Tc = 25°C,
Output VSWR = 10 : 1 All phases
2
Characteristic Curves
PF00105A
60
Pin=+7dBm
Vdd=4.6V
Pout=1W
55
50
(%)
T
η
45
40
−50 100
1.6
Pin=+7dBm
Vdd=4.6V
1.5
Vapc=2.9V
ηT vs. Tc
824MHz
849MHz
050
Tc (°C)
Pout vs. Tc
824MHz
849MHz
1.4
1.3
1.2
Pout(1) (W)
1.1
1
0.9
0.8
−50 100
050
Tc (°C)
3
PF00105A
31.8
Vdd=4.6V
Vapc=2.9V
Tc=−30°C
31.6
31.4
Pout(1) (dBm)
31.2
31
410
31.4
Vdd=4.6V
Vapc=2.9V
Tc=25°C
Pout vs. Pin (1)
824MHz
836.5MHz
849MHz
68
Pin (dBm)
Pout vs. Pin (2)
824MHz
836.5MHz
849MHz
31.2
31
Pout(1) (dBm)
30.8
30.6
410
68
Pin (dBm)
4
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