HITACHI HM6208H User Manual
HM6208H Series
65,536-word × 4-bit High Speed CMOS Static RAM
Features
• Single 5 V supply and high density 24-pin package
• High speed: Access time 25/35/45 ns (max)
• Low power
Operation: 300 mW (typ)
Standby: 100 µW (typ)
30 µW (typ) (L-version)
• Completely static memory required
No clock or timing strobe required
• Equal access and cycle time
• Directly TTL compatible: All inputs and outputs
• Battery backup operation capability (L-version)
Ordering Information
Type No. Access Time Package
HM6208HP-25
HM6208HP-35
HM6208HP-45
HM6208HLP-25
HM6208HLP-35
HM6208HLP-45
HM6208HJP-25
HM6208HJP-35
HM6208HJP-45
HM6208HLJP-25
HM6208HLJP-35
HM6208HLJP-45
25 ns
35 ns
45 ns
25 ns
35 ns
45 ns
25 ns
35 ns
45 ns
25 ns
35 ns
45 ns
300-mil, 24-pin plastic DIP (DP-24NC)
300-mil, 24-pin SOJ (CP-24D)
HM6208H Series
Pin Arrangement
Pin Description
Pin Name Function
A0–A15 Address
I/O1–I/O4 lnput/output
CS Chip select
WE Write enable
V
CC
V
SS
Power supply
Ground
SS
1A0
2A1
3A2
4A3
5A4
6A5
7A6
8A7
9A8
10A9
11CS
12V
(Top view)
24
V
CC
A1523
A1422
A1321
A1220
A1119
A1018
I/O117
I/O216
I/O315
I/O414
WE13
2
Block Diagram
A14
A15
A0
A1
A2
A3
A4
A5
Row
decoder
Memory array
256 × 1024
HM6208H Series
V
CC
V
SS
I/O1
I/O2
I/O3
Input
data
control
Column I/O
Column decoder
I/O4
A13
A12A11A10 A9 A8 A7 A6
CS
WE
Truth Table
CS WE Mode VCC Current I/O Pin Ref. Cycle
H × Not selected I
L H Read I
L L Write I
Note: ×: Don’t care.
, I
SB
SB1
CC
CC
High-Z —
Dout Read cycle
Din Write cycle
Absolute Maximum Ratings
Parameter Symbol Value Unit
Voltage on any pin relative to V
SS
Power dissipation P
Operating temperature range Topr 0 to +70 °C
Storage temperature range Tstg –55 to +125 °C
Storage temperature range under bias Tbias –10 to +85 °C
Note: 1. Vin min = –2.5 V for pulse widths ≤ 10 ns.
Vin –0.5*1 to +7.0 V
T
1.0 W
3
HM6208H Series
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter Symbol Min Typ Max Unit
Supply voltage V
Input high (logic 1) voltage V
Input low (logic 0) voltage V
CC
V
SS
IH
IL
Note: 1. VIL min = –2.0 V for pulse width ≤ 10 ns.
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)
Parameter Symbol Min Typ
Input leakage current I
Output leakage current I
Operating power supply
current
Standby power supply current ISB — 20 40 — 15 30 mA CS = VIH, min cycle
Standby power supply current
(1)
Output low voltage V
Output high voltage V
Notes: 1. L-version
2. Typical values are at V
LI
LO
I
CC
I
CC1
ISB1 — 0.02 2.0 — 0.02 2.0 CS ≥ VCC – 0.2 V,
*1
ISB1
OL
OH
= 5.0 V, Ta = +25°C and not guaranteed.
CC
4.5 5.0 5.5 V
000V
2.2 — 6.0 V
*1 —
–0.5
0.8 V
HM6208H-25 HM6208H-35/45
*2
Max Min Typ*2Max Unit Test Conditions
— — 2.0 — — 2.0 µAVCC = Max
Vin = V
— — 10.0 — — 10.0 µA CS = VIH, V
= VSS to V
— 60 120 — 50 100 mA CS = V
to V
SS
IL, II/O
CC
IO
CC
= 0 mA,
min cycle,
duty = 100%
— 40 80 — 40 80 mA CS = V
IL, II/O
= 0 mA,
t cycle = 50 ns,
duty = 100%
0 V ≤ Vin < 0.2 V, or
— 0.006 0.1*1— 0.006 0.1
Vin ≥ V
*1
– 0.2 V
CC
— — 0.4 — — 0.4 V IOL = 8 mA
2.4 — — 2.4 — — V IOH = –4.0 mA
Capacitance (Ta = 25°C, f = 1 MHz)
*1
Parameter Symbol Min Max Unit Test Conditions
Input capacitance Cin — 6 pF Vin = 0 V
Input/output capacitance C
I/O
—11pFV
I/O
= 0 V
Note: 1. These parameters are sampled and not 100% tested.
4
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