Hitachi 2SK322 Schematic [ru]

Application

HF wide band amplifier

Outline

MPAK

2SK322

Silicon N-Channel Junction FET

3

1

2

1. Drain

2. Source

3. Gate

2SK322

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Gate to drain voltage V
Gate to source voltage V
Drain current I
Gate current I

GDO

GSO

D

G

Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Gate to drain breakdown

V

(BR)GDO

voltage
Gate to source breakdown

V

(BR)GSO

voltage
Gate cutoff current I
Drain current I
Gate to source cutoff voltage V

GSS

DSS

GS(off)

Forward transfer admittance |yfs| 25 45 — mS V
Note: 1. The 2SK322 is grouped by I

Grade P Q R S T

Mark WP WQ WR WS WT
I

DSS

5 to 16 14 to 24 20 to 32 28 to 42 36 to 50

–15 — — V IG = –100 µA

–15 — — V IG = –100 µA

— — –10 nA VGS = –7 V, VDS = 0

1

*

5 — 50 mA VDS = 5 V, VGS = 0 (pulse)
— — –3.0 V V

as follows.

DSS

–15 V
–15 V
50 mA
5mA

= 5 V, ID = 100 µA

DS

= 5 V, VGS = 0, f = 1 kHz

DS

2

2SK322

Maximum Channel Power Dissipation

Curve

150

(mW)

ch

100

50

Channel Power Dissipation P

0

Ambient Temperature Ta (°C)

Typical Transfer Characteristics

30

VDS = 5 V

20

(mA)

D

Typical Output Characteristics

30

VDS = 5 V

= 0 V

V

GS

20

(mA)

D

–0.1
–0.2

–0.3

10

Drain Current I

–0.4
–0.5

–0.6
–0.8

15010050

0

Drain to Source Voltage V

DS

642

(V)

Forward Transfer Admittance vs.

Gate to Source Voltage

60

VDS = 5 V

(mS)

f = 1 kHz

fs

50

40

30

10

Drain Current I

0

Gate to Source Voltage V

GS

(V)

20

10

Forward Transfer Admittance y

0–2.0 –1.2 –0.8 –0.4–1.6

0

Gate to Source Voltage V

GS

0–2.0 –1.2 –0.8 –0.4–1.6

(V)

3