HITACHI 2SK1296 User Manual

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2SK1296

Silicon N-Channel MOS FET

Application

High speed power switching

Features

TO–220AB

• Low on-resistance

• High speed switching

2

• Low drive current

• 4 V gate drive device
– Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive

1

3

1. Gate

2. Drain
(Flange)

3. Source

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

———————————————————————————————————————————

Drain to source voltage V

DSS

60 V

———————————————————————————————————————————

Gate to source voltage V

GSS

±20 V

———————————————————————————————————————————

Drain current I

D

30 A

———————————————————————————————————————————

Drain peak current I

D(pulse)

* 120 A

———————————————————————————————————————————

Body to drain diode reverse drain current I

DR

30 A

———————————————————————————————————————————

Channel dissipation Pch** 75 W

———————————————————————————————————————————

Channel temperature Tch 150 °C

———————————————————————————————————————————

Storage temperature Tstg –55 to +150 °C

———————————————————————————————————————————

* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at T

= 25 °C

C

2SK1296

Table 2 Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

———————————————————————————————————————————

Drain to source breakdown V
voltage

(BR)DSS

60 — — V ID= 10 mA, VGS= 0

———————————————————————————————————————————

Gate to source breakdown V
voltage

(BR)GSS

±20 — — V IG= ±100 µA, VDS= 0

———————————————————————————————————————————

Gate to source leak current I

GSS

— — ±10 µA VGS= ±16 V, VDS= 0

———————————————————————————————————————————

Zero gate voltage drain current I

DSS

— — 250 µA VDS= 50 V, VGS= 0

———————————————————————————————————————————

Gate to source cutoff voltage V

GS(off)

1.0 — 2.0 V ID= 1 mA, VDS= 10 V

———————————————————————————————————————————

Static drain to source on state R
resistance

DS(on)

— 0.024 0.028 Ω ID= 15 A, VGS= 10 V *

——————————— ——————————–

— 0.030 0.040 ID= 15 A, VGS= 4 V *

———————————————————————————————————————————

Forward transfer admittance |yfs| 1727—SI

= 15 A, VDS= 10 V *

D

———————————————————————————————————————————

Input capacitance Ciss — 2250 — pF VDS= 10 V, VGS= 0,

————————————————————————————————

Output capacitance Coss — 1230 — pF f = 1 MHz

————————————————————————————————

Reverse transfer capacitance Crss — 300 — pF

———————————————————————————————————————————

Turn-on delay time t

d(on)

— 20 — ns ID= 15 A, VGS= 10 V,

————————————————————————————————

Rise time t

r

— 125 — ns RL= 2 Ω

————————————————————————————————

Turn-off delay time t

d(off)

— 390 — ns

————————————————————————————————

Fall time t

f

— 225 — ns

———————————————————————————————————————————

Body to drain diode forward V
voltage

DF

— 1.3 — V IF= 30 A, VGS= 0

———————————————————————————————————————————

Body to drain diode reverse t
recovery time di

rr

— 160 — ns IF= 30 A, VGS= 0,

/dt = 50 A/µs

F

———————————————————————————————————————————

* Pulse Test

2SK1296

150

100

Channel Dissipation Pch (W)

Power vs. Temperature Derating

50

50 1000

Case Temperature T

(°C)

C

150

500

Maximum Safe Operation Area

200
100

(A)

50

D

20
10

5

Operation in this area

Drain Current I

1.0

0.5

2

0.1

is limited by R

Ta = 25°C

Drain to Source Voltage V

100 µs

1 ms

PW = 10 ms (1 Shot)

DC Operation (T

C

DS (on)

= 25°C)

DS

301031.00.3
(V)

10 µs

100

50

15 V

4 V

5 V

Typical Output Characteristics

40

10 V

30

20

Drain Current ID (A)

10

0

0

Drain to Source Voltage V

3.5 V

3 V

VGS = 2.5 V

6

Pulse Test

842 10

(V)

DS

Typical Transfer Characteristics

50

VDS = 10 V

40

(A)

D

30

Pulse Test

20

Drain Current I

10

TC = 25°C

0

Gate to Source Voltage V

75°C

–25°C

3

42105

(V)

GS