HITACHI 2SK1254L, 2SK1254S User Manual
2SK1254
2SK1254(L), 2SK1254(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•Low on-resistance
•High speed switching
•4 V gate drive device
Can be driven from 5 V source
•Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
DPAK-1
4
4
1
2 3
1
2 3
D
1. Gate
G
2. Drain
3. Source
4. Drain
S
2SK1254(L), 2SK1254(S)
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
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Ratings |
Unit |
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Drain to source voltage |
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VDSS |
120 |
V |
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Gate to source voltage |
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VGSS |
±20 |
V |
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Drain current |
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ID |
3 |
A |
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Drain peak current |
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ID(pulse)*1 |
12 |
A |
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Body to drain diode reverse drain current |
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IDR |
3 |
A |
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Channel dissipation |
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Pch*2 |
20 |
W |
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Channel temperature |
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Tch |
150 |
°C |
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Storage temperature |
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Tstg |
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–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 s, duty cycle ≤ 1% |
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2. |
Value at TC = 25°C |
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2
2SK1254(L), 2SK1254(S)
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test conditions |
Drain to source breakdown |
V(BR)DSS |
120 |
— |
— |
V |
I |
D = 10 mA, VGS = 0 |
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voltage |
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Gate to source breakdown |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
— |
±10 |
µA |
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VGS = ±16 V, VDS = 0 |
Zero gate voltage drain current |
IDSS |
— |
— |
100 |
µA |
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VDS = 100 V, VGS = 0 |
Gate to source cutoff voltage |
VGS(off) |
1.0 |
— |
2.0 |
V |
I D = 1 mA, VDS = 10 V |
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Static Drain to source on state |
RDS(on) |
— |
0.30 |
0.40 |
Ω |
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ID = 2 A, VGS = 10 V *1 |
resistance |
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— |
0.35 |
0.55 |
Ω |
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ID = 2 A, VGS = 4 V *1 |
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Forward transfer admittance |
|yfs| |
2.4 |
4.0 |
— |
S |
I D = 2 A, VDS = 10 V *1 |
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Input capacitance |
Ciss |
— |
420 |
— |
pF |
V |
DS = 10 V, VGS = 0, |
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Output capacitance |
Coss |
— |
190 |
— |
pF |
f = 1 MHz |
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Reverse transfer capacitance |
Crss |
— |
25 |
— |
pF |
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Turn-on delay time |
td(on) |
— |
5 |
— |
ns |
I |
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D = 2 A, VGS = 10 V, |
Rise time |
tr |
— |
20 |
— |
ns |
R |
L = 15 Ω |
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Turn-off delay time |
td(off) |
— |
150 |
— |
ns |
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Fall time |
tf |
— |
45 |
— |
ns |
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Body to drain diode forward |
VDF |
— |
0.95 |
— |
V |
I |
F = 3 A, VGS = 0 |
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voltage |
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Body to drain diode reverse |
trr |
— |
160 |
— |
ns |
I |
F = 3 A, VGS = 0, |
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recovery time |
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diF/dt = 50 A/µs |
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Note: 1. Pulse test
3
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