HITACHI 2SK1254L, 2SK1254S User Manual
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Application
High speed power switching
Features
2SK1254(L), 2SK1254(S)
Silicon N-Channel MOS FET
• Low on-resistance
• High speed switching
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
DPAK-1
G
4
1
2
3
D
1
2
4
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SK1254(L), 2SK1254(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
120 V
±20 V
3A
12 A
3A
20 W
2
2SK1254(L), 2SK1254(S)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static Drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 2.4 4.0 — S ID = 2 A, VDS = 10 V *
Input capacitance Ciss — 420 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 190 — pF f = 1 MHz
Reverse transfer capacitance Crss — 25 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
120 — — V ID = 10 mA, VGS = 0
±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0
— — 100 µAVDS = 100 V, VGS = 0
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.30 0.40 Ω ID = 2 A, VGS = 10 V *
— 0.35 0.55 Ω ID = 2 A, VGS = 4 V *
—5 —nsI
= 2 A, VGS = 10 V,
D
— 20 — ns RL = 15 Ω
— 150 — ns
—45—ns
— 0.95 — V IF = 3 A, VGS = 0
— 160 — ns IF = 3 A, VGS = 0,
di
/dt = 50 A/µs
F
1
1
1
3
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