HITACHI 2SK1167, 2SK1168 User Manual
2SK1167
2SK1167, 2SK1168
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•Low on-resistance
•High speed switching
•Low drive current
•No secondary breakdown
•Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G |
1 |
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
2SK1167, 2SK1168
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
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Ratings |
Unit |
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Drain to source voltage |
2SK1167 |
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VDSS |
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450 |
V |
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2SK1168 |
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500 |
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Gate to source voltage |
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VGSS |
±30 |
V |
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Drain current |
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ID |
15 |
A |
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Drain peak current |
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ID(pulse)*1 |
60 |
A |
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Body to drain diode reverse drain current |
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IDR |
15 |
A |
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Channel dissipation |
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Pch*2 |
100 |
W |
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Channel temperature |
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Tch |
150 |
°C |
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Storage temperature |
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Tstg |
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–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 s, duty cycle ≤ 1% |
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2. |
Value at TC = 25°C |
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2
2SK1167, 2SK1168
Electrical Characteristics (Ta = 25°C)
Item |
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Symbol |
Min |
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Typ |
Max |
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Unit |
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Test conditions |
Drain to source |
2SK1167 |
V(BR)DSS |
450 |
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— |
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V |
I |
D = 10 mA, VGS = 0 |
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breakdown voltage |
2SK1168 |
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500 |
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Gate to source breakdown |
V(BR)GSS |
±30 |
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— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
— |
±10 |
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µA |
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VGS = ±25 V, VDS = 0 |
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Zero gate voltage |
2SK1167 |
IDSS |
— |
— |
250 |
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µA |
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VDS = 360 V, VGS = 0 |
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drain current |
2SK1168 |
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VDS = 400 V, VGS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
2.0 |
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— |
3.0 |
V |
I D = 1 mA, VDS = 10 V |
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Static Drain to source 2SK1167 |
RDS(on) |
— |
0.25 |
0.36 |
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Ω |
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ID = 8 A, VGS = 10 V *1 |
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on state resistance |
2SK1168 |
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— |
0.30 |
0.40 |
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Forward transfer admittance |
|yfs| |
8 |
13 |
— |
S |
I D = 8 A, VDS = 10 V *1 |
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Input capacitance |
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Ciss |
— |
2050 |
— |
pF |
V |
DS = 10 V, VGS = 0, |
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Output capacitance |
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Coss |
— |
600 |
— |
pF |
f = 1 MHz |
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Reverse transfer capacitance |
Crss |
— |
75 |
— |
pF |
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Turn-on delay time |
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td(on) |
— |
30 |
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ns |
I |
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D = 8 A, VGS = 10 V, |
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Rise time |
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tr |
— |
110 |
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ns |
R |
L = 3.75 Ω |
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Turn-off delay time |
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td(off) |
— |
150 |
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ns |
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Fall time |
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tf |
— |
70 |
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ns |
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Body to drain diode forward |
VDF |
— |
1.0 |
— |
V |
I |
F = 15 A, VGS = 0 |
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voltage |
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Body to drain diode reverse |
trr |
— |
500 |
— |
ns |
I |
F = 15 A, VGS = 0, |
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recovery time |
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diF/dt = 100 A/µs |
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Note: 1. Pulse test
3
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