HITACHI 2SK1163, 2SK1164 User Manual
2SK1163
2SK1163, 2SK1164
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•Low on-resistance
•High speed switching
•Low drive current
•No secondary breakdown
•Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G |
1 |
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
2SK1163, 2SK1164
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
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Ratings |
Unit |
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Drain to source voltage |
2SK1163 |
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VDSS |
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450 |
V |
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2SK1164 |
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500 |
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Gate to source voltage |
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VGSS |
±30 |
V |
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Drain current |
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ID |
11 |
A |
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Drain peak current |
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ID(pulse)*1 |
40 |
A |
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Body to drain diode reverse drain current |
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IDR |
11 |
A |
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Channel dissipation |
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Pch*2 |
100 |
W |
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Channel temperature |
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Tch |
150 |
°C |
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Storage temperature |
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Tstg |
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–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 s, duty cycle ≤ 1% |
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2. |
Value at TC = 25°C |
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