HITACHI 2SK1159, 2SK1160 User Manual

2SK1159

2SK1159, 2SK1160

Silicon N-Channel MOS FET

Application

High speed power switching

Features

•Low on-resistance

•High speed switching

•Low drive current

•No secondary breakdown

•Suitable for switching regulator, DC-DC converter and motor driver

Outline

TO-220AB

D	1	2 3

1. Gate

G

2. Drain

(Flange)

3. Source

S

2SK1159, 2SK1160

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

2SK1159

VDSS

450

V

2SK1160

500

Gate to source voltage

VGSS

±30

V

Drain current

ID

8

A

Drain peak current

ID(pulse)*1

32

A

Body to drain diode reverse drain current

IDR

8

A

Channel dissipation

Pch*2

60

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1.

PW ≤ 10 s, duty cycle ≤ 1%

2.

Value at TC = 25°C

2

2SK1159, 2SK1160

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source

2SK1159

V(BR)DSS

450

—

—

V

I

D = 10 mA, VGS = 0

breakdown voltage

2SK1160

500

Gate to source breakdown

V(BR)GSS

±30

—

—

V

I

G = ±100 µA, VDS = 0

voltage

Gate to source leak current

IGSS

—

—

±10

µA

VGS = ±25 V, VDS = 0

Zero gate voltage

2SK1159

IDSS

—

—

250

µA

VDS = 360 V, VGS = 0

drain current

2SK1160

VDS = 400 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

2.0

—

3.0

V

I D = 1 mA, VDS = 10 V

Static Drain to source 2SK1159

RDS(on)

—

0.55

0.7

Ω

ID = 4 A, VGS = 10 V *1

on state resistance

2SK1160

—

0.60

0.8

Forward transfer admittance

|yfs|

4.5

7.5

—

S

I D = 4 A, VDS = 10 V *1

Input capacitance

Ciss

—

1150

—

pF

V

DS = 10 V, VGS = 0,

Output capacitance

Coss

—

340

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

55

—

pF

Turn-on delay time

td(on)

—

17

—

ns

I

D = 4 A, VGS = 10 V,

Rise time

tr

—

55

—

ns

R

L = 7.5 Ω

Turn-off delay time

td(off)

—

100

—

ns

Fall time

tf

—

45

—

ns

Body to drain diode forward

VDF

—

0.9

—

V

I

F = 8 A, VGS = 0

voltage

Body to drain diode forward

trr

—

350

—

ns

I

F = 8 A, VGS = 0,

voltage

diF/dt = 100 A/µs

Note: 1. Pulse test

3