HITACHI 2SK1155, 2SK1156 User Manual

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Application

High speed power switching

2SK1155, 2SK1156

Silicon N-Channel MOS FET

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

TO-220AB

1

D

G

2

3

1. Gate

2. Drain (Flange)

3. Source

S

2SK1155, 2SK1156

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1155 V

DSS

2SK1156 500 Gate to source voltage V Drain current I Drain peak current I Body to drain diode reverse drain current I Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

450 V

±30 V 5A 20 A 5A 50 W

2

2SK1155, 2SK1156

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1155 V

(BR)DSS

breakdown voltage 2SK1156 500 Gate to source breakdown

V

(BR)GSS

voltage Gate to source leak current I Zero gate voltage 2SK1155 I

GSS

DSS

drain current 2SK1156 VDS = 400 V, VGS = 0 Gate to source cutoff voltage V Static Drain to source 2SK1155 R

GS(off)

DS(on)

on stateresistance 2SK1156 — 1.2 1.5 Forward transfer admittance |yfs| 2.5 4.0 — S ID = 2.5 A, VDS = 10 V * Input capacitance Ciss — 640 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 160 — pF f = 1 MHz Reverse transfer capacitance Crss — 20 — pF Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body to drain diode forward

d(on)

r

d(off)

f

V

DF

voltage Body to drain diode reverse

t

rr

recovery time Note: 1. Pulse test

450 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0

— — 250 µAVDS = 360 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V — 1.0 1.4 Ω ID = 2.5 A, VGS = 10 V *

— 10 — ns ID = 2.5 A, VGS = 10 V, — 25 — ns RL = 12 Ω —50—ns —30—ns

— 0.95 — V IF = 5 A, VGS = 0

— 300 — ns IF = 5 A, VGS = 0,

di

/dt = 100 A/µs

F

1

3

2SK1155, 2SK1156

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

(A)

D

10

10 V

6 V

8

Pulse Test

5.5 V

6

5.0 V

4

Maximum Safe Operation Area

50 20

10

(A)

5

D

2

Operation in this Area

1.0

is Limited by R

PW = 10 ms (1 shot)

DS (on)

DC Operation (T

0.5

Drain Current I

0.2 Ta = 25°C

0.1

0.05 1 3 30 300

2SK1156 2SK1155

10 100 1,000

Drain to Source Voltage V

Typical Transfer Characteristics

(A)

D

10

8

6

V

DS

Pulse Test

–25°C

= 20 V

4

100 µs

1 ms

C

= 25°C)

75°C

10 µs

(V)

DS

TC = 25°C

Drain Current I

2

10 30 400

Drain to Source Voltage V

4.5 V

V

= 4 V

GS

20 50

(V)

DS

Drain Current I

2

0

Gate to Source Voltage V

410

268

(V)

GS

4

2SK1155, 2SK1156

Drain to Source Saturation Voltage

(V)

10

DS (on)

8

6

vs. Gate to Source Voltage

Pulse Test

5 A

4

2

Drain to Source Saturation Voltage V

412160

Gate to Source Voltage V

2 A

I

= 1 A

D

820

Static Drain to Source on State

Resistance vs. Temperature

5

V

= 10 V

GS

Pulse Test

4

GS

(V)

Static Drain to Source on State

Resistance vs. Drain Current

10

Pulse Test

5

V

GS

= 10 V

2

(Ω)

1.0

DS (on)

R

0.5

0.2

0.1

Static Drain to Source on State Resistance

250

1.0 5 200.5 Drain Current I

10

D

(A)

Forward Transfer Admittance

vs. Drain Current

10

5

V

= 20 V

DS

Pulse Test

–25°C

TC = 25°C

75°C

15 V

3

(Ω)

DS (on)

2

R

1

0

Static Drain to Source on State Resistance

–40

0 80 120

Case Temperature T

ID = 5 A

1 A

40 160

(°C)

C

2 A

1.0

0.5

0.2

Forward Transfer Admittance yfs (S)

0.1

2

0.05

0.2 5

0.1 0.5 2 Drain Current I

1.0

D

(A)

5

2SK1155, 2SK1156

Body to Drain Diode Reverse

Recovery Time

5,000

di/dt = 100 A/µs, Ta = 25°C V

= 0

2,000

(ns)

rr

GS

Pulse Test

1,000

500

200

100

Reverse Recovery Time t

50

0.5

0.2 1.0 10

0.1 Reverse Drain Current I

Dynamic Input Characteristics

500

(V)

400

DS

V

= 100 V

DD

250 V

V

DS

400 V

300

200

V

= 400 V

100

Drain to Source Voltage V

DD

250 V 100 V

824320

16 40

Gate Charge Qg (nc)

Typical Capacitance vs. Drain to Source Voltage

1,000

Ciss

V

= 0

GS

f = 1 MHz

100

Coss

10

Capacitance C (pF)

Crss

2

5

(A)

DR

1

20 50

10 30 40

0

Drain to Source Voltage V

DS

(V)

Switching Characteristics

20

(V)

16

GS

12

V

GS

8

ID = 5 A

4

Gate to Source Voltage V

0

500

V

= 10 V VDD = 30 V

GS

PW = 2 µs, duty < 1%

200

100

50

20

Switching Time t (ns)

10

5

0.1

0.5 10

0.2 1.0 5 Drain Current I

•

t

d (off)

t

f

t

r

t

d (on)

D

2

(A)

6

Reverse Drain Current vs.

Source to Drain Voltage

10

Pulse Test

(A)

8

DR

6

4

5, 10 V

2

Reverse Drain Current I

0

0.8 2.0

0.4 1.2 1.6

Source to Drain Voltage V

V

GS

= 0, –10 V

SD

2SK1155, 2SK1156

(V)

(t)

S

1.0

0.3

0.1

0.03

0.01

Normalized Transient Thermal Impedance γ

Vin = 10 V

3

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

10 µ

100 µ 10 m 100 m 1 101 m

Switching Time Test Circuit Vin Monitor

50 Ω

Normalized Transient Thermal Impedance vs. Pulse Width

θch–c (t) = γ θch–c = 2.50°C/W, T

P

DM

Pulse Width PW (s)

Wavewforms

Vout Monitor

D.U.T

R

L

.

V

.

DD

= 30 V

Vin

Vout

t

d (on)

10 %

90 % t

r

(t) · θch–c

S

PW

T

90 %

t

d (off)

TC = 25°C

= 25°C

C

D =

90 %

PW

T

10 %

t

f

7

0.5 ± 0.1

2.54 ± 0.5

0.76 ± 0.1

14.0 ± 0.5 15.0 ± 0.3

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

10.16 ± 0.2

2.54 ± 0.5

1.26 ± 0.15

4.44 ± 0.2

2.7 MAX

1.5 MAX

11.5 MAX

9.5

8.0

1.27

6.4

+0.2

–0.1

φ 3.6

+0.1

-0.08

Hitachi Code JEDEC EIAJ Weight

(reference value)

TO-220AB Conforms Conforms

1.8 g

Unit: mm

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

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